Multilayer structure for reducing film roughness in magnetic devices

Patent metadata

Field	Value
Publication number	US-9780299-B2
Application number	US-201514949232-A
Country	US
Kind code	B2
Filing date	Nov 23, 2015
Priority date	Nov 23, 2015
Publication date	Oct 3, 2017
Grant date	Oct 3, 2017

Abstract

A seed layer stack with a smooth top surface having a peak to peak roughness of 0.5 nm is formed by sputter depositing an amorphous layer on a seed layer such as Mg where the seed layer has a resputtering rate 2 to 30× that of the amorphous layer. The uppermost seed layer is a template layer that is NiCr or NiFeCr. As a result, perpendicular magnetic anisotropy in an overlying magnetic layer that is a reference layer, free layer, or dipole layer is substantially maintained during high temperature processing up to 400° C. and is advantageous for magnetic tunnel junctions in embedded MRAMs, spintronic devices, or in read head sensors. The amorphous seed layer is SiN, TaN, or CoFeM where M is B or another element with a content that makes CoFeM amorphous as deposited. The seed layer stack may include a bottommost Ta or TaN buffer layer.

First claim

We claim:

1. A multilayer structure for reducing film roughness in a magnetic device, comprising:
(a) a first layer made of a material with a first bond energy, and having a first surface with an “as deposited” first peak to peak roughness; and
(b) an upper second layer that is non-crystalline or nano-crystalline and is made of a material with a second bond energy that is greater than the first bond energy such that deposition of the upper second layer results in resputtering of the first layer to give a first layer with a second surface having a second peak to peak roughness substantially less than the “as deposited” first peak to peak roughness, and the upper second layer formed on the second surface, the upper second layer has a third surface with the second peak to peak roughness.

2. The multilayer structure of claim 1 further comprised of a template layer formed on the third surface of the upper second layer and with a top surface having the second peak to peak roughness, the template layer has a (111) crystal orientation to promote perpendicular magnetic anisotropy (PMA) in an overlying magnetic layer.

3. The multilayer structure of claim 1 further comprising a buffer layer that is Ta or TaN and is formed on a substrate, the buffer layer contacts a bottom surface of the first layer.

4. The multilayer structure of claim 2 wherein the template layer is one of NiCr and NiFeCr.

5. The multilayer structure of claim 1 wherein the first layer is one or more of Mg, Al, Si, C, B, Mn, Rb, Zn, and Ti.

6. The multilayer structure of claim 1 wherein the upper second layer is one of TaN, SiN, and a CoFeM alloy wherein M is one of B, P, Ta, Zr, Si, Cu, Hf, Mo, W, and Nb with a content which makes the CoFeM alloy amorphous as deposited.

7. The multilayer structure of claim 1 wherein the first layer has a thickness from about 3 to 100 Angstroms.

8. The multilayer structure of claim 1 wherein the upper second layer has a thickness from about 1 to 100 Angstroms.

9. The multilayer structure of claim 2 wherein the overlying magnetic layer contacts the top surface of the template layer, and is a reference layer in a magnetic tunnel junction (MTJ) having a bottom spin valve configuration, or is a free layer in a MTJ with a top spin valve configuration.

10. The multilayer structure of claim 1 wherein the overlying magnetic layer is a reference layer, free layer, or dipole layer in a magnetic random access memory (MRAM) device, spin torque oscillator (STO), spintronic device, or a read head sensor.

11. A magnetic tunnel junction (MTJ), comprising:
(a) a first seed layer (SL1) stack, comprising:
(1) a smoothing layer formed on a substrate, the smoothing layer comprises a first layer with a first resputtering rate, and an upper second layer that is non-crystalline or nano-crystalline and has a second resputtering rate wherein the first resputtering rate is about 2 to 30 times greater than the second resputtering rate; and
(2) a template layer formed on a top surface of the upper second layer and with a top surface having a peak to peak roughness of about 0.5 nm, the template layer has a (111) crystal orientation to promote PMA in an overlying magnetic layer;

(b) a reference layer (RL) formed on the template layer;
(c) a free layer (FL); and
(d) a tunnel barrier formed between the reference layer and free layer to provide a SL1/RL/tunnel barrier/FL configuration.

12. The MTJ of claim 11 further comprising a capping layer to give a SL1/RL/tunnel barrier/FL/capping layer configuration.

13. The MTJ of claim 11 further comprising a buffer layer that is one of Ta or TaN formed on the substrate and contacting a bottom surface of the smoothing layer.

14. The MTJ of claim 11 wherein the template layer is one of NiCr and NiFeCr.

15. The MTJ of claim 10 wherein the first layer is one or more of Mg, Al, Si, C, B, Mn, Rb, Zn, and Ti.

16. The MTJ of claim 11 wherein the upper second layer is one of TaN, SiN, and a CoFeM alloy wherein M is one of B, P, Ta, Zr, Si, Cu, Hf, Mo, W, and Nb with a content which makes the CoFeM alloy amorphous as deposited.

17. The MTJ of claim 11 wherein the first layer has a thickness from about 3 to 100 Angstroms.

18. The MTJ of claim 11 wherein the upper second layer has a thickness from about 1 to 100 Angstroms.

19. A magnetic tunnel junction (MTJ), comprising:
(a) a first seed layer (SL1) stack, comprising:
(1) a smoothing layer formed on a substrate, the smoothing layer comprises a first layer with a first resputtering rate, and an upper second layer that is non-crystalline or nano-crystalline and has a second resputtering rate wherein the first resputtering rate is about 2 to 30 times greater than the second resputtering rate; and
(2) a template layer formed on a top surface of the upper second layer and with a top surface having a peak to peak roughness of about 0.5 nm, the template layer has a (111) crystal orientation to promote PMA in an overlying magnetic layer;

(b) a free layer (FL) formed on the template layer;
(c) a tunnel barrier layer on the free layer;
(d) a reference layer (RL) on the tunnel barrier layer; and
(e) a capping layer to provide a SL1/FL/tunnel barrier/RL/capping layer configuration.

Assignees

• Headway Tech Inc

Inventors

• Zhu Jian
• Jan Guenole
• Lee Yuan-Jen
• Liu Huanlong
• Tong Ru-Ying
• Wang Po-Kang

Classifications

• H01F10/16

  containing cobalt ({H01F10/126} , H01F10/13 take precedence) · CPC title

• H01F10/3286

  Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy · CPC title

• H01F10/32

  Spin-exchange-coupled multilayers, e.g. nanostructured superlattices {(applying spin-exchange-coupled multilayers to substrates H01F41/302)} · CPC title

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H01F10/3254

  the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title