Bipolar junction transistor layout

Patent metadata

Field	Value
Publication number	US-9780089-B2
Application number	US-201615339779-A
Country	US
Kind code	B2
Filing date	Oct 31, 2016
Priority date	Jul 30, 2015
Publication date	Oct 3, 2017
Grant date	Oct 3, 2017

Abstract

A bipolar junction transistor includes an emitter, a base contact, a collector and a shallow trench isolation. The base contact has two base fingers that form a corner to receive the emitter. The collector has two collector fingers extending along the base fingers of the base contact. The shallow trench isolation is disposed in between the emitter and the base contact and in between the base contact and the collector.

First claim

What is claimed is:

1. A bipolar junction transistor (BJT) assembly comprising:
at least eight first units arranged in a ring array; and
at least one second unit disposed in the ring array,
wherein each of the first and second units comprises:
an emitter;
a base contact including two base fingers that define a corner to receive the emitter;
a collector including two collector fingers extending along the base fingers; and
a shallow trench isolation disposed in between the emitter and the base contact and in between the base contact and the collector.

2. The bipolar junction transistor assembly of claim 1 , wherein the emitter is substantially square in a top view.

3. The bipolar junction transistor assembly of claim 2 , wherein each side of the emitter is substantially parallel to one of the two base fingers.

4. The bipolar junction transistor assembly of claim 1 , wherein the two collector fingers of the collector are orthogonal.

5. The bipolar junction transistor assembly of claim 1 , wherein the ring array is polygonal.

6. The bipolar junction transistor assembly of claim 1 , wherein the ring array has four sides, and each side has an equal number of first units.

7. The bipolar junction transistor assembly of claim 1 , wherein the corners of the first units open toward a first direction, and the corner of the second unit opens toward the first direction.

8. The bipolar junction transistor assembly of claim 1 , wherein the corners of the first units open toward a first direction, and the corner of the second unit opens toward a second direction substantially orthogonal to the first direction.

9. The bipolar junction transistor assembly of claim 1 , wherein the corners of the first units open toward different directions.

10. The bipolar junction transistor assembly of claim 1 , wherein the first units are spaced apart.

11. The bipolar junction transistor assembly of claim 1 , wherein the base fingers are of different length.

12. A bipolar junction transistor (BJT) assembly comprising:
a plurality of emitters spaced apart and arranged in an array;
a plurality of base contacts, each of the base contacts including two base fingers that define a corner to receive one of the emitter;
a plurality of collectors, each of the collectors including two collector fingers extending along the base fingers; and
a shallow trench isolation disposed in between the emitter and the base contact and in between the base contact and the collector.

13. The bipolar junction transistor (BJT) assembly of claim 12 , wherein the two base fingers of each of the base contacts are substantially normal.

14. The bipolar junction transistor (BJT) assembly of claim 12 , wherein the two base fingers of each of the base contacts and the two collector fingers of each of the collectors are substantially parallel.

15. The bipolar junction transistor (BJT) assembly of claim 12 , wherein the corners of the base contacts opens toward a first direction.

16. The bipolar junction transistor (BJT) assembly of claim 12 , wherein the corners of the base contacts opens toward different directions.

17. The bipolar junction transistor (BJT) assembly of claim 12 , wherein the emitters are arranged in a square array.

18. The bipolar junction transistor (BJT) assembly of claim 12 , wherein the two base fingers are of different length.

19. A bipolar junction transistor (BJT) assembly comprising:
a plurality of emitters spaced apart and arranged in an array;
a plurality of base contacts, each of the base contacts encloses a portion of one of the emitter;
a plurality of collectors, each of the collectors enclosing one of the base contacts; and
a shallow trench isolation disposed in between the emitter and the base contact and in between the base contact and the collector.

20. The bipolar junction transistor (BJT) assembly of claim 19 , wherein each of the base contacts includes two base fingers that define a pocket to receive one of the emitter.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Tsai Han-Min
• Huang Chi-Feng
• Chen Chia-Chung
• Liang Victor Chiang
• Lee Hsiao-Chun
• Chou Shou-Chun
• Fu Shu-Fang

Classifications

• H10W42/121

  protecting against mechanical damage (H10W76/00, H10W74/00 take precedence) · CPC title

• H01L29/41708

  Electricity · mapped topic

• H01L27/0207

  Electricity · mapped topic

• H01L29/735

  Electricity · mapped topic

• H01L29/0821

  Electricity · mapped topic