Ruthenium film forming method, film forming apparatus, and semiconductor device manufacturing method

Patent metadata

Field	Value
Publication number	US-9779950-B2
Application number	US-201615043675-A
Country	US
Kind code	B2
Filing date	Feb 15, 2016
Priority date	Feb 16, 2015
Publication date	Oct 3, 2017
Grant date	Oct 3, 2017

Abstract

A ruthenium film forming method includes a deposition process of introducing a mixed gas of a ruthenium carbonyl gas and a CO gas into a processing vessel 1 by supplying the CO gas as a carrier gas from a CO gas container 43 configured to contain the CO gas into a film forming source container 41 configured to contain ruthenium carbonyl in a solid state as a film forming source material, and forming ruthenium film by decomposing the ruthenium carbonyl on a wafer W; and a CO gas introduction process of bringing the CO gas into contact with a surface of the wafer W by introducing the CO gas directly into the processing vessel 1 from the CO gas container 43 after stopping the introducing of the mixed gas into the processing vessel 1. The deposition process and the CO gas introduction process are repeated multiple times.

First claim

I claim:

1. A ruthenium film forming method of forming a ruthenium film, comprising:
a substrate loading process of placing a processing target substrate within a processing vessel of a film forming apparatus;
a deposition process of generating a ruthenium carbonyl gas by supplying a CO gas as a carrier gas from a CO gas container configured to contain the CO gas into a film forming source container configured to contain ruthenium carbonyl in a solid state as a film forming source material, introducing a mixed gas of the ruthenium carbonyl gas and the CO gas into the processing vessel, and depositing metal ruthenium on a surface of the processing target substrate by decomposing the ruthenium carbonyl on the processing target substrate; and
a CO gas introduction process of bringing the CO gas into contact with the metal ruthenium on the surface of the processing target substrate by introducing the CO gas directly into the processing vessel from the CO gas container after stopping the introducing of the mixed gas into the processing vessel.

2. The ruthenium film forming method of claim 1 ,
wherein the deposition process and the CO gas introduction process are repeated multiple times.

3. The ruthenium film forming method of claim 2 ,
wherein when a time period indicating a processing time during which the deposition process is performed single time is set to be T 1 and a time period indicating a processing time during which the CO gas introduction process is performed single time is set to be T 2 , the T 1 and the T 2 satisfy a condition of T 1 <T 2 .

4. The ruthenium film forming method of claim 2 , further comprising:
a hydrogen gas introduction process of introducing a hydrogen gas into the processing vessel to bring the hydrogen gas into contact with the ruthenium film on the surface of the processing target substrate, after repeating the deposition process and the CO gas introduction process multiple times.

5. The ruthenium film forming method of claim 2 ,
wherein the deposition process is conducted again until a preset film thickness is obtained, after repeating the deposition process and the CO gas introduction process multiple times.

6. The ruthenium film forming method of claim 2 ,
wherein when a time period indicating a processing time during which the deposition process is performed single time is set to be T 1 and a time period indicating a processing time during which the CO gas introduction process is performed single time is set to be T 2 , the T 2 is shortened as the repetition number of the deposition process and the CO gas introduction process increases.

7. The ruthenium film forming method of claim 2 ,
wherein when a time period indicating a processing time during which the deposition process is performed single time is set to be T 1 and a time period indicating a processing time during which the CO gas introduction process is performed single time is set to be T 2 , the T 1 is lengthened as the repetition number of the deposition process and the CO gas introduction process increases.

8. The ruthenium film forming method of claim 1 ,
wherein a thickness of the ruthenium film is equal to or less than 2 nm.

9. A semiconductor device manufacturing method of manufacturing a semiconductor device having a copper wiring buried in an insulating film, the semiconductor device manufacturing method comprising:
preparing a processing target substrate having an interlayer insulating film provided with an opening;
forming a barrier film configured to suppress copper from being diffused on at least a surface of the opening of the processing target substrate;
forming a ruthenium film on the barrier film; and
burying copper serving as the copper wiring within the opening by forming a copper film on the ruthenium film,
wherein the forming of the ruthenium film is performed by a ruthenium film forming method as claimed in claim 1 .

10. The semiconductor device manufacturing method of claim 9 ,
wherein the burying of the copper is performed by an ionized physical vapor deposition method.

11. The semiconductor device manufacturing method of claim 9 , further comprising:
removing the barrier film, the ruthenium film and the copper film formed on portions except the inside of the opening by chemical mechanical polishing to obtain the copper wiring, after the burying of the copper.

Assignees

• Tokyo Electron Ltd

Inventors

• Ishizaka Tadahiro

Classifications

• H10W20/425

  Barrier, adhesion or liner layers · CPC title

• H10W20/033

  in openings in dielectrics · CPC title

• H10P14/43 Primary

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• C23C16/45561

  Gas plumbing upstream of the reaction chamber · CPC title

• C23C16/45523

  Pulsed gas flow or change of composition over time · CPC title