Chemical mechanical polishing (CMP) composition comprising a protein

US9777192B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9777192-B2
Application numberUS-201314377648-A
CountryUS
Kind codeB2
Filing dateJan 25, 2013
Priority dateFeb 10, 2012
Publication dateOct 3, 2017
Grant dateOct 3, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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Abstract

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Chemical mechanical polishing composition is provided. The composition comprises (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a protein, and (C) an aqueous medium.

First claim

Opening claim text (preview).

The invention claimed is: 1. A chemical mechanical polishing (CMP) composition, comprising: (A) inorganic particles, organic particles, or a mixture or a composite thereof, (B) 0.05 wt % of hydrophobin or of a protein comprising at least one hydrophobin unit, and (C) an aqueous medium, wherein a pH value of the CMP composition is from 5 to 9. 2. The CMP composition according to claim 1 , wherein (B) is hydrophobin. 3. The CMP composition according to claim 1 , wherein the particles (A) are ceria particles. 4. The CMP composition according to claim 1 , wherein the mean particle size of the particles (A) is from 50 nm to 300 nm, as determined by dynamic light scattering techniques. 5. The CMP composition according to claim 1 , further comprising: (H) a sugar compound. 6. The CMP composition according to claim 5 , wherein the sugar compound (H) is at least one selected from the group consisting of mono-, di-, tri-, tetra-, penta-, oligo- and polysaccharides, and oxidized monosaccharides. 7. The CMP composition according to claim 5 , wherein the sugar compound (H) is at least one selected from the group consisting of glucose, galactose, saccharose, sucralose, and stereoisomers thereof. 8. A process for the manufacture of manufacturing a semiconductor device, the process comprising: chemical mechanical polishing a substrate in the presence of the CMP composition of claim 1 . 9. A substrate suitable for use in the semiconductor industry prepared by the method of claim 8 . 10. The substrate suitable for use in the semiconductor industry according to claim 9 , wherein the substrate comprises silicon dioxide, and silicon nitride, or polysilicon. 11. The CMP composition according to claim 1 further comprising at least of (D) a corrosion inhibitor, (E) an oxidizing agent, (F) a complexing agent, and (G) a biocide. 12. The CMP composition according to claim 1 , which comprises from 0.05% to 2% of (A), based on the total of the CMP composition. 13. The CMP composition according to claim 11 , optionally comprising at least one of: (D) from 0.3% to 2.5%, (E) from 0.5% to 5%, (F) from 0.5% to 5%, and (G) from 0.001% to 0.05%, based on the total of the CMP composition. 14. The CMP composition according to claim 1 wherein the particles (A) are at least one selected from the group consisting of alumina, ceria, copper oxide, iron oxide, nickel oxide, manganese oxide, silica, silicon nitride, silicon carbide, tin oxide, titania, titanium carbide, tungsten oxide, yttrium oxide, zirconia, polystyrenes, polyesters, alkyl resins, polyurethanes, polylactones, polycarbonates, poylacrylates, polymethacrylates, polyethers, poly(N-alkylacrylamide)s, poly(methyl vinyl ether)s, copolymers comprising at least one of vinylaromatic compound, acrylates, methacrylates, maleic anhydride acrylamides, methacrylamides, acrylic acid, or methacrylic acid as monomeric units, and a mixture or a composite thereof. 15. The CMP composition according to claim 1 , wherein the (A) particles comprise ceria particles, and the pH value is from 6 to 8. 16. The CMP composition according to claim 1 , wherein the pH value is 7.0.

Assignees

Inventors

Classifications

  • H10P95/062Primary

    involving a dielectric removal step · CPC title

  • of semiconductor materials · CPC title

  • C09G1/02Primary

    containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

  • on other substances · CPC title

  • Aqueous liquid suspensions · CPC title

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Frequently asked questions

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What does patent US9777192B2 cover?
Chemical mechanical polishing composition is provided. The composition comprises (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a protein, and (C) an aqueous medium.
Who is the assignee on this patent?
Basf Se
What technology area does this patent fall under?
Primary CPC classification H10P95/062. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Oct 03 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).