III-nitride semiconductor structures comprising spatially patterned implanted species

Patent metadata

Field	Value
Publication number	US-9773898-B2
Application number	US-201514847290-A
Country	US
Kind code	B2
Filing date	Sep 8, 2015
Priority date	Sep 8, 2015
Publication date	Sep 26, 2017
Grant date	Sep 26, 2017

Abstract

III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.

First claim

What is claimed is:

1. A semiconductor structure, comprising:
a silicon-on-insulator substrate;
a III-nitride material region located over a surface region of the substrate; and
an implanted species arranged within the surface region of the substrate in a pattern spatially defined across at least one lateral dimension of the substrate, wherein the implanted species is present within at least a portion of the surface region of the substrate at a concentration of at least about 10 19 /cm 3 .

2. The semiconductor structure of claim 1 , wherein the semiconductor structure comprises a transistor located over the substrate.

3. The semiconductor structure of claim 2 , wherein at least a portion of the substrate underneath a channel between a source of the transistor and a drain of the transistor is substantially free of the implanted species.

4. The semiconductor structure of claim 1 , wherein the semiconductor structure comprises a second transistor laterally spaced apart from a first transistor, wherein a portion of the surface region of the substrate between the first transistor and the second transistor has a concentration of the implanted species of at least about 10 19 /cm 3 .

5. The semiconductor structure of claim 1 , wherein the III-nitride material region comprises a 2DEG region, and the 2DEG region is substantially free of the implanted species.

6. The semiconductor structure of claim 1 , wherein the substrate comprises at least a layer having a resistivity of greater than about 10 2 Ohms-cm.

7. The semiconductor structure of claim 1 , wherein the III-nitride material region comprises GaN.

8. The semiconductor structure of claim 1 , wherein the III-nitride material region comprises a III-nitride nucleation layer.

9. The semiconductor structure of claim 1 , wherein the III-nitride material region comprises a III-nitride transition layer.

10. The semiconductor structure of claim 9 , wherein the III-nitride transition layer is compositionally graded.

11. The semiconductor structure of claim 1 , wherein the III-nitride material region comprises a III-nitride buffer layer.

12. The semiconductor structure of claim 1 , wherein the III-nitride material region comprises a III-nitride device region.

13. The semiconductor structure of claim 1 , wherein a diffusion barrier region is located between the III-nitride material region and the substrate.

Assignees

• M/A-Com Tech Solutions Holdings Inc
• Macom Tech Solutions Holdings Inc

Inventors

• Roberts John Claassen
• Linthicum Kevin J
• Hanson Allen W

Classifications

• H10D64/257

  for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes (source or drain electrodes of TFTs H10D30/673) · CPC title

• H10D62/8503

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title

• H01L29/0623

  Electricity · mapped topic

• H01L29/32

  Electricity · mapped topic

• H01L29/41758

  Electricity · mapped topic