Method of fabricating a nanoribbon and applications thereof

Patent metadata

Field	Value
Publication number	US-9773669-B2
Application number	US-201514849865-A
Country	US
Kind code	B2
Filing date	Sep 10, 2015
Priority date	Sep 11, 2014
Publication date	Sep 26, 2017
Grant date	Sep 26, 2017

Abstract

A method of fabricating a nanostructure, which comprises forming an elongated tubular nanostructure, and generating conditions for said tubular nanostructure to unwrap.

First claim

What is claimed is:

1. A method of fabricating a nanostructure, comprising:
forming an elongated tubular nanostructure having a core-shell structure on a generally planar substrate such that a longitudinal axis is generally parallel to said substrate;
forming on said substrate a protective layer having a thickness less than a diameter of said tubular nanostructure, thereby partially burying said tubular nanostructure in said protective layer;
generating conditions for said tubular nanostructure to unwrap, by etching an unburied portion of said tubular nanostructure and removing said protective layer; and
selectively removing said core following said removal of said protective layer;
thereby forming a non-tubular nanostructure.

2. The method according to claim 1 , wherein said generating said conditions comprises etching a portion of said tubular nanostructure along a longitudinal axis of said tubular nanostructure.

3. The method according to claim 1 , wherein said forming said protective layer comprises, applying a layer having a thickness of at least said diameter of said tubular nanostructure, and selectively reducing a thickness of said layer to said thickness less than said diameter.

4. The method according to claim 1 , wherein said tubular nanostructure comprises an inorganic substance.

5. The method according to claim 1 , wherein said tubular nanostructure comprises an organic substance.

6. The method according to claim 1 , wherein said tubular nanostructure comprises a dielectric substance.

7. The method according to claim 1 , wherein said tubular nanostructure comprises a semiconductor inorganic substance.

8. The method according to claim 1 , wherein said tubular nanostructure comprises at least one substance selected from the group consisting of silicon (Si), gallium nitride (GaN), titanium (Ti), bismuth (Bi), tellurium (Te), lead (Pb) silicon carbide (SiC), gallium arsenide (GaAs), gallium phosphide (GaP), indium phosphide (InP), indium arsenide (InAs), aluminum nitride (AlN), zinc oxide (ZnO), zinc sulfide (ZnS), indium oxide (InO), indium tin oxide (ITO) and cadmium sulfide (CdS).

9. The method according to claim 1 , wherein said tubular nanostructure comprises silicon.

10. The method according to claim 1 , wherein said tubular nanostructure, once unwrapped, is made exclusively from silicon.

11. The method according to claim 1 , wherein said core comprises at least one substance selected from the group consisting of germanium (Ge), zinc oxide (ZnO), zinc sulfide (ZnS), silicon (Si), gallium nitride (GaN), silver (Ag), gold (Au), a Group II-VI element, a Group III-V element, and a Group IV element.

12. The method according to claim 3 , wherein said core is made exclusively of germanium.

13. A nanostructure system, comprising a substrate and a non-tubular nanostructure fabricated by the method according to claim 1 .

14. The system according to claim 13 , comprising a plurality of nanostructures.

15. The system according to claim 13 , serving as or being incorporated in a system selected from the group consisting of an electronic circuitry system, an optoelectronic system, an electromechanical system, a thermoelectric system, an optomechanical system, a sensor, a diode system, a transistor system, a memory system, an imaging system, a display system, a projector display system, an identification tag system and a smart card system.

16. An article of manufacture, comprising a tubular nanostructure having an outermost layer, wherein an elongated section of said outermost layer is open such that said outermost layer is cut-open to expose an interior of said tubular nanostructure to an environment outside said outermost layer, said section being generally parallel to a longitudinal axis of said nanostructure, and wherein said nanostructure is at least partially buried in a protective layer supporting side walls of said nanostructure such that said open section is uncoated by said protective layer.

17. The article of manufacture of claim 16 , wherein said section is along an entire length of said nanostructure.

18. The article of manufacture of claim 16 , wherein said interior comprises a solid core.

19. The article of manufacture of claim 16 , wherein said interior is hollowed.

20. A method of fabricating a nanostructure, comprising:
forming on a generally planar substrate an elongated tubular nanostructure such that a longitudinal axis is generally parallel to said substrate;
forming on said substrate a protective layer having a thickness of at least a diameter of said tubular nanostructure; and
generating conditions for said tubular nanostructure to unwrap by applying an etching process to reduce a thickness of said layer and said tubular nanostructure to a thickness below a diameter of said tubular nanostructure prior to said etching, and selectively removing said protective layer to expose sides of said tubular nanostructure.

21. The method according to claim 20 , wherein said generating said conditions comprises etching a portion of said tubular nanostructure along a longitudinal axis of said tubular nanostructure.

22. The method according to claim 21 , wherein said tubular nanostructure has a core-shell structure, and the method further comprises selectively removing said core following said etching.

23. The method according to claim 22 , wherein said core comprises at least one substance selected from the group consisting of germanium (Ge), zinc oxide (ZnO), zinc sulfide (ZnS), silicon (Si), gallium nitride (GaN), silver (Ag), gold (Au), a Group II-VI element, a Group III-V element, and a Group IV element.

24. The method according to claim 22 , wherein said core is made exclusively of germanium.

25. The method according to claim 20 , wherein said tubular nanostructure comprises an inorganic substance.

26. The method according to claim 20 , wherein said tubular nanostructure comprises an organic substance.

27. The method according to claim 20 , wherein said tubular nanostructure comprises a dielectric substance.

28. The method according to claim 20 , wherein said tubular nanostructure comprises a semiconductor inorganic substance.

29. The method according to claim 20 , wherein said tubular nanostructure comprises at least one substance selected from the group consisting of silicon (Si), gallium nitride (GaN), titanium (Ti), bismuth (Bi), tellurium (Te), lead (Pb) silicon carbide (SiC), gallium arsenide (GaAs), gallium phosphide (GaP), indium phosphide (InP), indium arsenide (InAs), aluminum nitride (AlN), zinc oxide (ZnO), zinc sulfide (ZnS), indium oxide (InO), indium tin oxide (ITO) and cadmium sulfide (CdS).

30. The method according to claim 20 , wherein said tubular nanostructure comprises silicon.

31. The method according to claim 20 , wherein said tubular nanostructure, once unwrapped, is made exclusively from silicon.

32. A nanostructure system, comprising a substrate and a non-tubular nanostructure fabricated by the method according to claim 20 .

33. The system according to claim 32 , comprising a plurality of nanostructures.

34. The system according to claim 32 , serving as or being incorporated in a system selected from the group consisting of an electronic circuitry system, an optoelectronic system, an electromechanica

Assignees

• Ramot At Tel-Aviv Univ Ltd

Inventors

• Patolsky Fernando
• Davidi Guy
• Pevzner Alexander

Classifications

• H10P50/242

  of Group IV materials · CPC title

• H10P14/3462

  Nanowires · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/38

  characterised by treatments done after the formation of the materials · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title