Semiconductor device
US-2024413252-A1 · Dec 12, 2024 · US
US9281185B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9281185-B2 |
| Application number | US-201414535675-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 7, 2014 |
| Priority date | Oct 23, 2009 |
| Publication date | Mar 8, 2016 |
| Grant date | Mar 8, 2016 |
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Methods for passivating a nanotube fabric layer within a nanotube switching device to prevent or otherwise limit the encroachment of an adjacent material layer are disclosed. In some embodiments, a sacrificial material is implanted within a porous nanotube fabric layer to fill in the voids within the porous nanotube fabric layer while one or more other material layers are applied adjacent to the nanotube fabric layer. Once the other material layers are in place, the sacrificial material is removed. In other embodiments, a non-sacrificial filler material (selected and deposited in such a way as to not impair the switching function of the nanotube fabric layer) is used to form a barrier layer within a nanotube fabric layer. In other embodiments, individual nanotube elements are combined with and nanoscopic particles to limit the porosity of a nanotube fabric layer.
Opening claim text (preview).
What is claimed is: 1. A method for forming a carbonic nanolayer based device, comprising: combining a first volume of carbon structures and a second volume of nanoscopic particles in a liquid medium to form an application solution; depositing said application solution over a first material layer as to form a composite layer, said composite layer comprising a mixture of said carbon structures and said nanoscopic particles; depositing a second material layer such that said com…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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