Process for forming graphene layers on silicon carbide

Patent metadata

Field	Value
Publication number	US-9771665-B2
Application number	US-201415022532-A
Country	US
Kind code	B2
Filing date	Sep 8, 2014
Priority date	Sep 16, 2013
Publication date	Sep 26, 2017
Grant date	Sep 26, 2017

Abstract

A process for forming graphene, includes: depositing at least a first and a second metal onto a surface of silicon carbide (SiC), and heating the SiC and the first and second metals under conditions that cause the first metal to react with silicon of the silicon carbide to form carbon and at least one stable silicide. The corresponding solubilities of the carbon in the stable silicide and in the second metal are sufficiently low that the carbon produced by the silicide reaction forms a graphene layer on the SiC.

First claim

The invention claimed is:

1. A process for forming graphene, comprising:
depositing at least two metals onto a surface of silicon carbide (SiC), the at least two metals comprising at least one first metal and at least one second metal; and
heating the SiC and the first and second metals under conditions that cause the at least one first metal to react with silicon of the silicon carbide to form carbon and at least one stable silicide, wherein corresponding solubilities of the carbon in the at least one stable silicide and in the at least one second metal are sufficiently low that the carbon produced by the silicide reaction forms a graphene layer disposed between the at least one stable silicide and the remaining SiC, and wherein the at least one second metal is chosen such that the corresponding solubility of carbon in the at least one second metal is lower than the corresponding solubility of carbon in the at least one stable silicide.

2. The process of claim 1 , wherein the first at least one metal is nickel, and the second at least one metal is copper.

3. A process for forming graphene layers, comprising:
depositing one or more layers, collectively substantially composed of nickel and copper, onto a surface of silicon carbide;
heating the resulting structure to cause at least a portion of the nickel to react with a corresponding portion of the silicon carbide to form a carbon and a metallic layer comprising a nickel silicide and any remaining unreacted nickel and copper, wherein the carbon is in a form of a graphene layer disposed between remaining silicon carbide and the metallic layer.

4. The process of claim 3 , comprising removing the metallic layer to expose the underlying graphene layer.

5. The process of claim 1 , wherein the silicon carbide is in the form of a thin film disposed on a substrate.

6. The process of claim 5 , wherein the substrate is a silicon substrate.

7. The process of claim 6 , wherein the thin film of SiC is in the form of mutually spaced islands of silicon carbide disposed on the silicon substrate.

8. The process of claim 5 , comprising removing at least a portion of the substrate under the silicon carbide islands to free a corresponding portion of the mutually spaced islands of silicon carbide.

9. The process of claim 1 , wherein the graphene layer is part of a micro-electro-mechanical systems (MEMS) transducer.

10. The process of claim 1 , wherein the silicon carbide is substantially amorphous.

11. The process of claim 1 , wherein said heating step is performed in an inert gas atmosphere.

12. The process of claim 1 , wherein said heating step is performed under vacuum.

13. The process of claim 12 , wherein said vacuum has a pressure of about 10 −4 to 10 −3 mbar.

14. The process of claim 1 , wherein said heating step comprises includes heating the SiC and the first and second metals to a temperature of at least 800° C.

15. The process of claim 1 , wherein said heating step comprises includes heating the SiC and the first and second metals to a temperature of about 1000° C.

16. The process of claim 15 , wherein said heating step comprises heating the SiC and the first and second metals to a temperature of about 1050° C.

17. The process of claim 1 , wherein said heating step is a rapid thermal processing (RTP) heating step.

18. A structure comprising one or more layers of graphene formed by the process of claim 1 .

Assignees

• Univ Griffith

Inventors

• Iacopi Francesca
• Ahmed Mohsin
• Cunning Benjamin Vaughan

Classifications

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P14/3406

  Carbon, e.g. diamond-like carbon · CPC title

• H10P14/3241

  being conductive materials · CPC title

• H10P14/3208

  Silicon carbide · CPC title

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title