Ultra-high dielectric constant garnet

Patent metadata

Field	Value
Publication number	US-9771304-B2
Application number	US-201615181786-A
Country	US
Kind code	B2
Filing date	Jun 14, 2016
Priority date	Jun 15, 2015
Publication date	Sep 26, 2017
Grant date	Sep 26, 2017

Abstract

Disclosed are embodiments of synthetic garnet materials for use in radiofrequency applications. In some embodiments, increased amounts of bismuth can be added into specific sites in the crystal structure of the synthetic garnet in order to boost certain properties, such as the dielectric constant and magnetization. Accordingly, embodiments of the disclosed materials can be used in high frequency applications, such as in base station antennas.

First claim

What is claimed is:

1. A synthetic garnet material comprising a structure including dodecahedral sites, the structure having bismuth occupying at least some of the dodecahedral sites and the structure having gadolinium, and the garnet material having a dielectric constant value of at least 31.

2. The synthetic garnet material of claim 1 wherein the 3 dB linewidth is less than 80.

3. The synthetic garnet material of claim 1 wherein the structure includes gadolinium in a level up to 1.0 units.

4. The synthetic garnet material of claim 1 wherein the synthetic garnet material does not include sillenite as a second phase.

5. The synthetic garnet material of claim 1 wherein the structure contains at least 1.4 units of bismuth.

6. The synthetic garnet material of claim 5 wherein the structure contains between 1.4 and 2.5 units of bismuth.

7. The synthetic garnet material of claim 1 wherein the synthetic garnet material has a dielectric constant of at least 34.

8. The synthetic garnet material of claim 1 wherein the garnet material has a dielectric constant of at least 36.

9. The synthetic garnet material of claim 1 wherein the garnet material has a magnetization of 1900 πM s or above.

10. The synthetic garnet material of claim 1 wherein the material is incorporated into a base station.

11. The synthetic garnet material of claim 1 wherein the material is incorporated into a cellular antenna.

12. A synthetic garnet material comprising a structure including dodecahedral sites, between 1.4 and 2.5 units of bismuth occupying at least some of the dodecahedral sites, and the garnet material having a dielectric constant value of at least 31.

13. A synthetic garnet material comprising a structure including dodecahedral sites, bismuth occupying at least some of the dodecahedral sites, and the garnet material having a dielectric constant value of at least 34.

14. A modified synthetic garnet composition represented by the formula: Bi x Ca y Gd z Y 3-x-y-z Fe 5-y Zr y O 12 , x being between 1.0 and 2.0, y being between 0.1 and 0.8, and z being between 0.2 and 1.9.

15. The modified synthetic garnet composition of claim 14 wherein the modified synthetic garnet composition has a dielectric constant of at least 34.

16. The modified synthetic garnet composition of claim 14 wherein the material is incorporated into a cellular antenna.

17. A modified synthetic garnet composition represented by the formula: Bi x Ca y Gd z Y 3-x-y-z Fe 5-y Zr y O 12 , the modified synthetic garnet composition having a dielectric constant of at least 34.

18. A method of manufacturing a synthetic garnet having a high dielectric constant, the method comprising:
providing a yttrium iron garnet structure; and
inserting greater than 1.4 units of bismuth into the iron garnet structure to form a modified synthetic garnet structure without sillenite as a second phase, the modified synthetic garnet having a dielectric constant of at least 34.

19. The method of claim 18 wherein the modified synthetic garnet has a composition of Bi x Ca y Gd z Y 3-x-y-z Fe 5-y Zr y O 12 , 1.0<x<2.0, 0.1<y<0.8, 0.2<z<1.9.

20. The method of claim 18 wherein the modified synthetic garnet has a composition of Bi x Ca y Gd z Y 3-x-y-z Fe 5-y Zr y O 12 , x being between 1.0 and 2.0, y being between 0.1 and 0.8, and z being between 0.2 and 1.9.

Assignees

• Skyworks Solutions Inc

Inventors

• Cruickshank David Bowie
• Hill Michael David

Classifications

• C04B2235/3255

  Niobates or tantalates, e.g. silver niobate · CPC title

• C04B2235/3256

  Molybdenum oxides, molybdates or oxide forming salts thereof, e.g. cadmium molybdate · CPC title

• C04B2235/3294

  Antimony oxides, antimonates, antimonites or oxide forming salts thereof, indium antimonate · CPC title

• C04B2235/3244

  Zirconium oxides, zirconates, hafnium oxides, hafnates, or oxide-forming salts thereof · CPC title

• C04B2235/604

  Pressing at temperatures other than sintering temperatures · CPC title