Bipolar transistor having collector with grading

Patent metadata

Field	Value
Publication number	US-9768282-B2
Application number	US-201514699381-A
Country	US
Kind code	B2
Filing date	Apr 29, 2015
Priority date	Apr 30, 2012
Publication date	Sep 19, 2017
Grant date	Sep 19, 2017

Abstract

This disclosure relates to bipolar transistors, such as heterojunction bipolar transistors, having at least one grading in the collector. One aspect of this disclosure is a bipolar transistor that includes a collector having a high doping concentration at a junction with the base and at least one grading in which doping concentration increases away from the base. In some embodiments, the high doping concentration can be at least about 3×10 16 cm −3 . According to certain embodiments, the collector includes two gradings. Such bipolar transistors can be implemented, for example, in power amplifiers.

First claim

What is claimed is:

1. A bipolar transistor comprising a collector, a base disposed over the collector, and an emitter, the collector having a doping concentration of at least about 3×10 16 cm −3 in a first collector region abutting the base, the collector also having an other collector region under the first collector region, the other collector region including a continuous grading in which doping concentration increases away from the first collector region, the continuous grading having a minimum doping concentration of about one order of magnitude less than the doping concentration of the first collector region.

2. The bipolar transistor of claim 1 wherein the other collector region further includes a second continuous grading in which doping concentration increases away from the base at a different rate than in the continuous grading.

3. The bipolar transistor of claim 1 wherein the doping concentration in the first collector region is at least about 5×10 16 cm −3 .

4. The bipolar transistor of claim 1 wherein the doping concentration in the first collector region is in a range from about 5×10 16 cm −3 to 8×10 16 cm −3 .

5. The bipolar transistor of claim 1 wherein the bipolar transistor is a single heterojunction bipolar transistor.

6. The bipolar transistor of claim 1 wherein the base has a doping concentration in a range from about 2×10 19 cm −3 to 7×10 19 cm −3 and the base has a thickness in the range from about 350 Å to 1400 Å.

7. A bipolar transistor comprising a collector, a base disposed over the collector, and an emitter, the collector having a doping concentration of at least about 5×10 16 cm −3 in a first collector region abutting the base, the collector also having a second collector region under the first collector region and a third collector region under the second collector region, the first collector region having a flat doping concentration, the second collector region having a different, flat doping concentration less than the flat doping concentration of the first collector region, and the third collector region including a continuous grading in which doping concentration increases away from the first collector region, the bipolar transistor being a heterojunction bipolar transistor.

8. The bipolar transistor of claim 7 wherein the bipolar transistor is a single heterojunction bipolar transistor.

9. The bipolar transistor of claim 7 wherein the collector consists essentially of n-doped GaAs.

10. The bipolar transistor of claim 7 wherein the collector includes n-doped GaAs, the base includes p-doped GaAs, and the emitter includes InGaP.

11. The bipolar transistor of claim 7 wherein the emitter abuts the base.

12. The bipolar transistor of claim 7 wherein the third collector region includes a second continuous grading in which doping concentration increases away from the base at a different rate than in the continuous grading.

13. The bipolar transistor of claim 7 wherein the doping concentration in the first collector region is in a range from about 5×10 16 cm −3 to 9×10 16 cm −3 .

14. A bipolar transistor comprising a collector, a base disposed over the collector, and an emitter, the collector having a doping concentration of at least about 5×10 16 cm −3 in a first collector region abutting the base, the collector also having an other collector region under the first collector region, the first collector region having a flat doping concentration and the other collector region including a first grading and a second grading in which doping concentration increases away from the base at a different rate than in the first grading, the first grading having a lower doping concentration than the flat doping concentration, the first grading being between the first collector region and the second grading.

15. The bipolar transistor of claim 14 wherein the doping concentration in the first collector region is in a range from about 5×10 16 cm −3 to 9×10 16 cm −3 .

16. The bipolar transistor of claim 14 wherein the bipolar transistor is a single heterojunction bipolar transistor.

17. The bipolar transistor of claim 14 wherein the first collector region includes n-doped GaAs and the other collector region includes n-doped GaAs.

18. The bipolar transistor of claim 14 wherein the bipolar transistor has an alternative channel power ratio (ACPR2) of no greater than about −65 dBc and an output power of at least about 29 dBm when operating at a frequency within a frequency band centered around about 833 MHz.

19. The bipolar transistor of claim 14 wherein the second grading is configured to cause BV CEX to be increased.

20. The bipolar transistor of claim 14 wherein the doping concentration in the second grading varies substantially linearly.

Assignees

• Skyworks Solutions Inc

Inventors

• Zampardi Jr Peter J

Classifications

• H10D62/824

  comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions · CPC title

• H10D62/85

  being Group III-V materials, e.g. GaAs · CPC title

• H01L29/0821

  Electricity · mapped topic

• H01L29/36

  Electricity · mapped topic

• H01L29/737 Primary

  Electricity · mapped topic