Method for manufacturing a semiconductor structure, semiconductor structure, and electronic device

Patent metadata

Field	Value
Publication number	US-9768251-B2
Application number	US-201514947632-A
Country	US
Kind code	B2
Filing date	Nov 20, 2015
Priority date	Nov 28, 2014
Publication date	Sep 19, 2017
Grant date	Sep 19, 2017

Abstract

A method for manufacturing a semiconductor structure comprises the steps of: providing a substrate including a first semiconductor material; forming a dielectric layer on a surface of the substrate; forming an opening in the dielectric layer having a bottom reaching the substrate; providing a second semiconductor material in the opening and on the substrate, the second semiconductor material being en-capsulated by a further dielectric material thereby forming a filled cavity; melting the second semiconductor material in the cavity; recrystallizing the second semi-conductor material in the cavity; laterally removing the second semiconductor material at least partially for forming a lateral surface at the second semiconductor material; and forming a third semiconductor material on the lateral surface of the second semiconductor material, wherein the third semiconductor material is different from the second semiconductor material.

First claim

What is claimed is:

1. A method for manufacturing a semiconductor structure comprising:
providing a substrate including a first semiconductor material;
forming a dielectric layer on a surface of the substrate
forming an opening in the dielectric layer having a bottom reaching the substrate;
providing a second semiconductor material in the opening and on the substrate, the second semiconductor material being encapsulated by a further dielectric material, thereby forming a filled cavity;
melting the second semiconductor material in the cavity;
recrystallizing the second semiconductor material in the cavity;
forming an opening in the further dielectric material,
laterally removing the second semiconductor material at least partially for forming a lateral surface at the second semiconductor material; and
forming a third semiconductor material on the lateral surface of the second semiconductor material.

2. The method of claim 1 ,
wherein laterally removing the second semiconductor material comprises:
forming an elongated structure of the second semiconductor material along a lateral wall of the cavity, and
forming a flat lateral surface at the elongated structure.

3. The method of claim 2 ,
wherein laterally removing the second semiconductor material comprises:
selectively etching the second semiconductor material without etching the dielectric layer and/or the further dielectric material.

4. The method of claim 1 ,
wherein recrystallizing the second semiconductor material sets in at an interface between the substrate and the second semiconductor material inside the opening in the dielectric layer.

5. The method of claim 1 ,
wherein the flat lateral surface at the elongated structure is a seed for growing the third semiconductor material as a crystalline material.

6. The method of claim 1 , wherein forming the third semiconductor material comprises a vapour epitaxial process.

7. The method of claim 1 ,
wherein melting the second semiconductor material comprises:
heating above a melting point of the second semiconductor material for a predetermined time, and
wherein recrystallizing comprises cooling the second semiconductor material below the melting point of the second semiconductor material.

8. The method of claim 1 ,
wherein the dielectric layer comprises the further dielectric material.

9. The method of claim 1 comprising:
forming a further semiconductor material on a lateral surface of the third semiconductor material.

10. The method according to claim 9 , comprising:
forming another layer of the third semiconductor material on the further semiconductor material,
selectively removing the further semiconductor material and/or the second semiconductor material.

11. The method of claim 1 ,
wherein the second and/or the third and/or the further semiconductor material comprises germanium and/or a compound semiconductor material including a III-V compound semiconductor material, a II-VI compound semiconductor material, a IV-VI compound semiconductor material, a II-V compound semiconductor material, and/or a IV-IV compound semiconductor material.

12. A semiconductor structure formed by the method of claim 1 .

Assignees

• IBM

Inventors

• Borg Mattias B
• Moselund Kirsten E
• Riel Heike E
• Schmid Heinz

Classifications

• H10P14/3802

  Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth · CPC title

• H10P14/3421

  Arsenides · CPC title

• H10P14/3418

  Phosphides · CPC title

• H10P14/2905 Primary

  Silicon, silicon germanium or germanium · CPC title

• H10P14/276

  Lateral overgrowth · CPC title