High breakdown voltage microelectronic device isolation structure with improved reliability

Patent metadata

Field	Value
Publication number	US-9768245-B2
Application number	US-201615045449-A
Country	US
Kind code	B2
Filing date	Feb 17, 2016
Priority date	May 15, 2014
Publication date	Sep 19, 2017
Grant date	Sep 19, 2017

Abstract

A microelectronic device contains a high voltage component having a high voltage node and a low voltage node. The high voltage node is isolated from the low voltage node by a main dielectric between the high voltage node and low voltage elements at a surface of the substrate of the microelectronic device. A lower-bandgap dielectric layer is disposed between the high voltage node and the main dielectric. The lower-bandgap dielectric layer contains at least one sub-layer with a bandgap energy less than a bandgap energy of the main dielectric. The lower-bandgap dielectric layer extends beyond the high voltage node continuously around the high voltage node. The lower-bandgap dielectric layer has an isolation break surrounding the high voltage node at a distance of at least twice the thickness of the lower-bandgap dielectric layer from the high voltage node.

First claim

What is claimed is:

1. An integrated circuit, comprising:
a substrate;
a lower conductive plate positioned above the substrate;
a first dielectric layer positioned above the lower conductive plate, the first dielectric layer having a first bandgap energy;
a second dielectric layer positioned on the first dielectric layer, the second dielectric layer having a second bandgap energy lower than the first bandgap energy;
an isolation break separating the second dielectric layer into:
a first portion co-extending with the lower conductive plate; and
a second portion free of overlapping with the lower conductive plate; and

an upper conductive plate positioned above the second dielectric layer and circumscribed by the isolation break.

2. The integrated circuit of claim 1 , wherein the second dielectric layer includes:
a first sub-layer positioned on the first dielectric layer, the first sub-layer having the first bandgap energy;
a second sub-layer positioned on the first sub-layer, the second sub-layer having a third bandgap energy lower than the second bandgap energy.

3. The integrated circuit of claim 1 , wherein the second dielectric layer includes a silicon nitride layer.

4. The integrated circuit of claim 1 , wherein the second dielectric layer includes a silicon oxynitride layer.

5. The integrated circuit of claim 1 , wherein the second dielectric layer includes:
a silicon oxynitride layer positioned on the first dielectric layer;
a silicon nitride layer positioned on the silicon oxynitride layer.

6. The integrated circuit of claim 1 , wherein the first portion of the second dielectric layer extends beyond the lower conductive plate.

7. The integrated circuit of claim 1 , wherein the first dielectric layer has a thickness of at least 2 microns.

8. The integrated circuit of claim 1 , wherein the upper conductive plate is smaller than the lower conductive plate.

9. The integrated circuit of claim 1 , wherein the upper conductive plate sized with equal area as the lower conductive plate.

10. The integrated circuit of claim 1 , further comprising:
a circuit positioned under the second portion of the second dielectric layer, the circuit coupled to an interconnect layer for receiving a first voltage; and
a bond pad on the upper conductive plate for receiving a second voltage substantially higher than the first voltage.

11. An integrated circuit, comprising:
a substrate;
a lower conductive plate positioned above the substrate;
a first dielectric layer positioned above the lower conductive plate, the first dielectric layer having a first bandgap energy;
a second dielectric layer positioned on the first dielectric layer, the second dielectric layer having a second bandgap energy lower than the first bandgap energy, the second dielectric layer divided into:
a first portion co-extending with the lower conductive plate; and
a second portion free of overlapping with the lower conductive plate and spaced apart from the first portion; and

an upper conductive plate positioned above and within a perimeter of the first portion of the second dielectric layer.

12. The integrated circuit of claim 11 , wherein the first portion of the second dielectric layer extends beyond the lower conductive plate.

13. The integrated circuit of claim 11 , wherein the first portion of the second dielectric layer has a thickness and extends beyond the lower conductive plate by at least a distance twice of the thickness.

14. The integrated circuit of claim 11 , wherein the second dielectric layer includes:
a first sub-layer positioned on the first dielectric layer, the first sub-layer having the first bandgap energy;
a second sub-layer positioned on the first sub-layer, the second sub-layer having a third bandgap energy lower than the second bandgap energy.

15. The integrated circuit of claim 11 , wherein the second dielectric layer includes a silicon nitride layer.

16. The integrated circuit of claim 11 , wherein the second dielectric layer includes a silicon oxynitride layer.

17. The integrated circuit of claim 11 , wherein the second dielectric layer includes:
a silicon oxynitride layer positioned on the first dielectric layer;
a silicon nitride layer positioned on the silicon oxynitride layer.

18. The integrated circuit of claim 11 , wherein the first dielectric layer has a thickness of at least 2 microns.

19. The integrated circuit of claim 11 , further comprising:
a circuit positioned under the second portion of the second dielectric layer, the circuit coupled to an interconnect layer for receiving a first voltage; and
a bond pad on the upper conductive plate for receiving a second voltage substantially higher than the first voltage.

20. The integrated circuit of claim 11 , further comprising:
an isolation break laterally surrounding the first portion of the second dielectric layer and isolating the first portion of the second dielectric layer from the second portion of the second dielectric layer, the isolation break having a third bandgap energy higher than the second bandgap energy.

Assignees

• Texas Instruments Inc

Inventors

• West Jeffrey Alan
• Bonifield Thomas D
• Williams Byron Lovell

Classifications

• H10D84/813

  Combinations of field-effect devices and capacitor only · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6927

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

• H10W72/536

  the connected ends being ball-shaped · CPC title