Operation aware auto-feedback SRAM

Patent metadata

Field	Value
Publication number	US-9767890-B2
Application number	US-201113991423-A
Country	US
Kind code	B2
Filing date	Dec 31, 2011
Priority date	Dec 31, 2011
Publication date	Sep 19, 2017
Grant date	Sep 19, 2017

Abstract

A static random-access memory is described. The SRAM includes a storage cell and a voltage supply to supply the storage cell with a reduced voltage during a write operation. The SRAM cell includes a first pass gate and a second pass gate. A first resistor is coupled between the first pass gate and a first side of the storage cell. A second resistor is coupled between the second pass gate and a second side of the storage cell.

First claim

What is claimed is:

1. A static random access memory comprising:
a storage cell;
a first voltage source to apply to the storage cell a first voltage, which is changed to a second voltage during a write operation, wherein the second voltage is less than the first voltage;
a first pass gate comprising a first side of the first pass gate and a second side of the first pass gate;
a second voltage source to apply a third voltage via a word line to the first pass gate and a second pass gate, wherein the first voltage is different from the third voltage during the write operation, wherein the first pass gate to receive the third voltage on the first side of the first pass gate and to operate in a linear region during the write operation as a node of the storage cell is discharged, and the first pass gate to operate in a saturation mode during a read operation, wherein the second voltage is less than the third voltage during the write operation;
a first resistor coupled between the first pass gate and a first side of the storage cell;
a second pass gate; and
a second resistor coupled between the second pass gate and a second side of the storage cell.

2. The static random access memory of claim 1 , wherein the storage cell comprises four transistors configured as two cross-coupled inverters.

3. The static random access memory of claim 1 , further comprising:
the word line coupled to a gate of the first pass gate;
a first bit line coupled to the first side of the first pass gate, wherein the first resistor is coupled to the second side of the first pass gate;
a second bit line coupled to a first side of the second pass gate, wherein the second resistor is coupled to a second side of the second pass gate.

4. The static random access memory of claim 1 , wherein the storage cell comprises:
a first p-type metal oxide semiconductor (PMOS) transistor coupled to the first voltage source;
a first n-type metal oxide semiconductor (NMOS) transistor coupled in series with the first PMOS transistor;
a second PMOS transistor coupled to the first voltage source;
a second NMOS transistor coupled in series with the second PMOS transistor.

5. The static random access memory of claim 1 , wherein at least one of the first and second resistors provides process, voltage, and temperature tracking.

6. The static random access memory of claim 1 , wherein the first voltage is less than the third voltage.

7. A static random access memory, comprising:
storage transistors coupled to receive a first voltage during a read operation and a second voltage during a write operation, wherein the second voltage is less than the first voltage and wherein a first voltage source supplies the storage transistors with the second voltage during the write operation;
a first pass gate transistor comprising a first side of the first pass gate transistor and a second side of the first pass gate transistor;
a second voltage source to supply a fixed third voltage via a word line to the first pass gate transistor and a second pass gate transistor, wherein the first voltage is different from the fixed third voltage during the write operation, wherein the first pass gate transistor to receive the fixed third voltage on the first side of the first pass gate transistor and to operate in a linear region during the write operation as a node of the storage cell is discharged, and the first pass gate to operate in a saturation mode during the read operation wherein the second voltage is less than the third voltage during the write operation;
a first resistor coupled between the first pass gate transistor and a first subset of the storage transistors, the first resistor implemented in silicon;
a second pass gate transistor;
a second resistor coupled between the second pass gate transistor and a second subset of the storage transistors, the second resistor implemented in silicon.

8. The static random access memory of claim 7 , wherein storage transistors comprise four transistors configured as two cross-coupled inverters.

9. The static random access memory of claim 7 , further comprising:
the word line coupled to a gate of the first pass gate transistor;
a first bit line coupled to the first side of the first pass gate transistor, wherein the first resistor is coupled to the second side of the first pass gate transistor;
a second bit line coupled to a first side of the second pass gate transistor, wherein the second resistor is coupled to a second side of the second pass gate transistor.

10. The static random access memory of claim 7 , wherein the storage transistors comprise:
a first p-type metal oxide semiconductor (PMOS) transistor coupled to the first voltage source;
a first n-type metal oxide semiconductor (NMOS) transistor coupled in series with the first PMOS transistor;
a second PMOS transistor coupled to the first voltage source;
a second NMOS transistor coupled in series with the second PMOS transistor.

11. The static random access memory of claim 7 , wherein at least one of the first and second resistors provides process, voltage, and temperature tracking.

12. The static random access memory of claim 7 , wherein the first voltage is less than the third voltage.

13. A method comprising:
sending, to a first bit line of a static random access memory, a data bit to be written to a storage cell of the static random access memory;
applying a first voltage value to a word line of the static random access memory that is coupled to a gate of a pass gate transistor of the static random access memory, wherein a first voltage source supplies the first voltage value to the first bit line, the word line, and the pass gate transistor of the static random access memory;
changing a voltage applied to the storage cell of the static random access memory from a second voltage value to a third voltage value, wherein the third voltage value is less than the second voltage value, wherein the second voltage value is different from the first voltage value, wherein a second voltage source supplies the second and third voltage values;
discharging a node of the storage cell through (1) a first transistor of the storage cell; (2) a pass gate resistor coupled to the node of storage cell; and (3) the pass gate transistor coupled to the pass gate resistor and to the bit line, wherein the data bit is written to the storage cell, and wherein the pass gate transistor operates in a linear region as the node of the storage cell is discharged.

14. The method of claim 13 , wherein the storage cell comprises four transistors configured as two cross-coupled inverters.

15. The method of claim 13 , wherein the pass gate transistor comprises an n-type metal oxide semiconductor (NMOS) transistor.

16. The method of claim 13 , wherein the pass gate resistor provides process, voltage, and temperature tracking.

17. The method of claim 13 , wherein the second voltage value is less than the first voltage value.

Assignees

• Kolar Pramod
• Karl Eric A
• Intel Corp

Inventors

• Kolar Pramod
• Karl Eric A

Classifications

• G11C11/412 Primary

  using field-effect transistors only · CPC title

• G11C11/419

  Read-write [R-W] circuits · CPC title