Negative resist composition and pattern forming process

Patent metadata

Field	Value
Publication number	US-9316915-B2
Application number	US-201414552937-A
Country	US
Kind code	B2
Filing date	Nov 25, 2014
Priority date	Nov 28, 2013
Publication date	Apr 19, 2016
Grant date	Apr 19, 2016

Abstract

A negative resist composition comprising a polymer comprising recurring units (a) of formula (1) and having a Mw of 1,000-500,000 as base resin is provided. R 1 is H or methyl, X is a single bond or —C(═O)—O—R 4 —, R 2 is a single bond or C 1 -C 4 alkylene, R 3 is C 2 -C 8 alkylene, R 4 is a single bond or C 1 -C 4 alkylene, and 0<a≦1.0. The composition exhibits a high resolution due to controlled acid diffusion and forms a resist film which is unsusceptible to swell in the developer and hence to pattern collapse.

First claim

The invention claimed is:

1. A chemically amplified negative resist composition comprising a polymer as a base resin comprising recurring units (a) of the general formula (1) and recurring units of at least one type selected from the group consisting of a vinylnaphthalene (b1), indene (b2), acenaphthylene (b3), chromone (b4), coumarin (b5), norbornadiene (b6), and vinylcarbazole (b7), as represented by the general formula (2), the polymer having a weight average molecular weight of 1,000 to 500,000, an organic solvent, and an acid generator,

wherein R 1 is hydrogen or methyl, X is a single bond or —C(═O)—O—R 4 —, R 2 is a single bond or C 1 -C 4 alkylene group, R 3 is a linear C 2 -C 8 alkylene group, R 4 is a single bond or C 1 -C 4 alkylene group,

wherein R 5 is hydrogen or methyl, m is an integer of 0 to 2, n is an integer of 0 to 5, R 110 to R 116 are each independently hydrogen, C 1 -C 30 alkyl, partially or entirely halo-substituted alkyl, the alkyl and halo-substituted alkyl optionally having an alkyl-substituted or unsubstituted hydroxyl or carboxyl group, hydroxyl, C 1 -C 4 alkoxy, acyl, acyloxy, alkoxycarbonyl, C 6 -C 10 aryl, halogen, or 1,1,1,3,3,3-hexafluoro-2-propanol group, Y is a single bond, —O—, —S—, —C(═O)—O—R 6 —, or —C(═O)—NH—R 6 —, R 6 is a single bond or C 1 -C 4 alkylene group, X 0 is methylene, oxygen or sulfur atom; b1 to b7 are numbers in the range: 0≦b1<1.0, 0≦b2<1.0, 0≦b3<1.0, 0≦b4<1.0, 0≦b5<1.0, 0≦b6<1.0, 0≦b7<1.0, 0<b1+b2+b3+b4+b5+b6+b7<1.0, 0<a<1.0, and 0 <a+b1+b2+b3+b4+b5+b6+b7≦1.0.

2. A pattern forming process comprising the steps of applying the negative resist composition of claim 1 onto a substrate, prebaking the composition to form a resist film, exposing the resist film to EB or soft X-ray in a wavelength range of 3 to 15 nm, and developing in an alkaline developer.

3. A chemically amplified negative resist composition comprising a polymer as a base resin comprising recurring units (a) of the general formula (1), recurring units of at least one type selected from the group consisting of a vinylnaphthalene (b1), indene (b2), acenaphthylene (b3), chromone (b4), coumarin (b5), norbornadiene (b6), and vinylcarbazole (b7), as represented by the general formula (2), and recurring units (d1), (d2) or (d3) having a sulfonium salt as represented by the following general formula (3), the polymer having a weight average molecular weight of 1,000 to 500,000, and an organic solvent,

wherein R 1 is hydrogen or methyl, X is a single bond or —C(═O)—O—R 4 —, R 2 is a single bond or C 1 -C 4 alkylene group, R 3 is a linear C 2 -C 8 alkylene group, R 4 is a single bond or C 1 -C 4 alkylene group,

wherein R 5 is hydrogen or methyl, m is an integer of 0 to 2, n is an integer of 0 to 5, R 110 to R 116 are each independently hydrogen, C 1 -C 30 alkyl, partially or entirely halo-substituted alkyl (the alkyl and halo-substituted alkyl optionally having an alkyl-substituted or unsubstituted hydroxyl or carboxyl group), hydroxyl, C 1 -C 4 alkoxy, acyl, acyloxy, alkoxycarbonyl, C 6 -C 10 aryl, halogen, or 1,1,1,3,3,3-hexafluoro-2-propanol group, Y is a single bond, —O—, —S—, —C(═O)—O—R 6 —, or —C(═O)—NH—R 6 —, R 6 is a single bond or C 1 -C 4 alkylene group, X 0 is methylene, oxygen or sulfur atom;
b1 to b7 are numbers in the range: 0≦b1<1.0, 0≦b2<1.0, 0≦b3<1.0, 0≦b4<1.0, 0≦b5<1.0, 0≦b6<1.0, 0≦b7<1.0, 0<b1+b2+b3+b4+b5+b6+b7<1.0, 0<a<1.0, and 0<a+b1+b2+b3+b4+b5+b6+b7<1.0,

wherein R 20 , R 24 , and R 28 each are hydrogen or methyl, R 21 is a single bond, phenylene, —O—R—, or —C(═O)—Y 0 —R—, Y 0 is oxygen or NH, R is a straight, branched or cyclic C 1 -C 6 alkylene group, alkenylene group or phenylene group, which may contain a carbonyl, ester, ether, or hydroxyl moiety, R 22 , R 23 , R 25 , R 26 , R 27 , R 29 , R 30 and R 31 are each independently a straight, branched or cyclic C 1 -C 12 alkyl group which may contain a carbonyl, ester or ether moiety, a C 6 -C 12 aryl group, a C 7 -C 20 aralkyl group, or a thiophenyl group, Z 0 is a single bond, methylene, ethylene, phenylene, fluorinated phenylene, —O—R 32 —, or —C(═O)—Z 1 —R 32 —, wherein Z 1 is oxygen or NH, and R 32 is a straight, branched or cyclic C 1 -C 6 alkylene group, alkenylene group or phenylene group, which may contain a carbonyl, ester, ether or hydroxyl moiety, M − is a non-nucleophilic counter ion, and 0≦d1≦0.35, 0≦d2≦0.35, 0≦d3≦0.35, and 0<d1+d2+d3≦0.35.

4. The negative resist composition of claim 3 , further comprising a basic compound and/or a surfactant.

5. A pattern forming process comprising the steps of applying the negative resist composition of claim 3 onto a substrate, prebaking the composition to form a resist film, exposing the resist film to EB or soft X-ray in a wavelength range of 3 to 15 nm, and developing in an alkaline developer.

Assignees

• Shinetsu Chemical Co

Inventors

• Hatakeyama Jun
• Sagehashi Masayoshi

Classifications

• C08F212/26 Primary

  Nitrogen · CPC title

• C08F212/22

  Oxygen · CPC title

• H10P76/2041

  Photolithographic processes · CPC title

• G03F7/0388

  with ethylenic or acetylenic bands in the side chains of the photopolymer · CPC title

• C08F220/26

  Esters containing oxygen in addition to the carboxy oxygen · CPC title