Electroplating processor with current thief electrode

Patent metadata

Field	Value
Publication number	US-9765443-B2
Application number	US-201514843803-A
Country	US
Kind code	B2
Filing date	Sep 2, 2015
Priority date	Sep 2, 2015
Publication date	Sep 19, 2017
Grant date	Sep 19, 2017

Abstract

An electroplating processor has a head including a wafer holder, with the head movable to position a wafer in the wafer holder into a vessel holding a first electrolyte and having one or more anodes. A thief electrode assembly may be positioned adjacent to a lower end of the vessel, or below the anode. A thief current channel extends from the thief electrode assembly to a virtual thief position adjacent to the wafer holder. A thief electrode in the thief electrode assembly is positioned within a second electrolyte which is separated from the first electrolyte by a membrane. Alternatively, two membranes may be used with an isolation solution between them. The processor avoids plating metal onto the thief electrode, even when processing redistribution layer and wafer level packaging wafers having high amp-minute electroplating characteristics.

First claim

The invention claimed is:

1. An electroplating processor, comprising:
a vessel holding a catholyte containing metal ions;
a head having a wafer holder, with the head movable to position the wafer holder in the vessel;
at least one anode in the vessel;
an isolyte compartment containing an isolyte, with the isolyte separated from the catholyte by a first membrane;
a thiefolyte compartment containing a thiefolyte, with the thiefolyte separated from the isolyte by a second membrane; and
a current thief electrode in the thiefolyte compartment.

2. The processor of claim 1 further including at least one thief current channel filled with the catholyte and extending from the first membrane to a virtual thief position above the at least one anode.

3. The processor of claim 2 with the virtual thief position extending around a perimeter of the wafer.

4. The processor of claim 2 with the virtual thief position vertically above a wafer held in the wafer holder.

5. The processor of claim 4 having a plurality of thief current channels filled with catholyte, and with each thief current channel having a horizontal section and a vertical section.

6. The processor of claim 1 wherein the first membrane and/or the second membrane comprises a cation membrane or a monovalent membrane.

7. The processor of claim 1 with the anode comprising a wire within a membrane tube containing an anolyte, wherein the anolyte and the isolyte are the same electrolyte.

8. The processor of claim 1 comprising an inner anode surrounded by an outer anode, and with each anode comprising a wire within a membrane tube containing an anolyte.

9. The processor of claim 1 further including a replenisher cell connected to the vessel for replacing metal ions in the catholyte, and with the replenisher cell also connected to the anolyte compartment and to the isolyte compartment.

10. The processor of claim 1 with the second membrane comprising a membrane tube.

11. The processor of claim 1 further including an inner ring between the at least one anode and the wafer holder, with the inner ring having an upper surface curving downward to a central opening of the inner ring, and with the inner ring having a plurality of vertical through openings.

12. The processor of claim 1 having no electric field shield in the vessel.

13. The processor of claim 1 wherein the isolyte compartment is on an outside bottom surface of the vessel.

14. The processor of claim 1 wherein the thiefolyte compartment is rectangular and has a largest characteristic dimension equal to a length of the thiefolyte compartment.

15. The processor of claim 1 with the anode comprising an inert anode or a consumable anode.

16. The processor of claim 15 wherein the inert anode comprises a wire in a membrane tube.

17. The electroplating processor of claim 1 further including a virtual thief opening around a wafer in the wafer holder with the virtual thief opening having a diameter larger than the wafer, and with the thiefolyte compartment having a largest characteristic dimension that is smaller than the diameter of the wafer.

Assignees

• Applied Materials Inc

Inventors

• Wilson Gregory J
• Mchugh Paul R

Classifications

• C25D21/12 Primary

  Process control or regulation (controlling or regulating in general G05) · CPC title

• C25D17/12 Primary

  Shape or form (C25D17/14 takes precedence) · CPC title

• C25D17/007

  Current directing devices · CPC title

• C25D17/001 Primary

  Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells · CPC title

• C25D7/12

  Semiconductors · CPC title