Substrate with insulating layer
US-2016345451-A1 · Nov 24, 2016 · US
US9765442B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9765442-B2 |
| Application number | US-201514967424-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 14, 2015 |
| Priority date | Dec 14, 2015 |
| Publication date | Sep 19, 2017 |
| Grant date | Sep 19, 2017 |
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An electrolyte for surface treatment of a metal implant includes 10-30 wt % of a sulfur-containing compound aqueous solution, 3-10 wt % of a phosphorous-containing compound aqueous solution, 0.5-2 wt % of an oxidant aqueous solution, and 0.5-5 wt % of a surfactant aqueous solution, with the rest being water. The concentration of the sulfur-containing compound aqueous solution is 0.1-3 M. The concentration of the phosphorous-containing compound aqueous solution is 0.05-2 M. The concentration of the oxidant aqueous solution is 0.05-1 M. The concentration of the surfactant aqueous solution is 0.05-5 M. The electrolyte is utilized for treating a surface of a metal implant, forming a porous oxide layer on the surface of the metal implant.
Opening claim text (preview).
What is claimed is: 1. A method for surface treatment of a metal implant, comprising: cleaning a metal implant by sonication, with the metal implant being immersed in a solvent, until dirt adhered on a surface of the metal implant is removed; connecting the cleaned metal implant to an anode and immersing the cleaned metal implant and a cathode in an electrolyte; and supplying a voltage of 150-500 V to the anode and the cathode under a temperature of 0 to −10° C. to conduct a micro-arc discharge reaction on the metal implant in the electrolyte, until a porous oxide layer is formed on the surface of the metal implant, wherein the electrolyte comprises: 10-30 wt % of a sulfur-containing compound aqueous solution, 3-10 wt % of a phosphorous-containing compound aqueous solution, 0.5-2 wt % of an oxidant aqueous solution, and 0.5-5 wt % of a surfactant aqueous solution, with the rest being water; wherein the sulfur-containing compound aqueous solution has a concentration of 0.1-3 M, the phosphorous-containing compound aqueous solution has a concentration of 0.05-2 M, the oxidant aqueous solution has a concentration of 0.05-1 M, and the surfactant aqueous solution has a concentration of 0.05-5 M. 2. The method for surface treatment of the metal implant as claimed in claim 1 , wherein the porous oxide layer has a thickness of 0.5-30 μm, a pore diameter of 0.5-15 μm, and a pore deepness of 0.5-3 μm. 3. The method for surface treatment of the metal implant as claimed in claim 1 , further comprising conducting the micro-arc discharge reaction for 10-60 minutes on the metal implant in the electrolyte, to form the porous oxide layer on the surface of the metal implant. 4. The method for surface treatment of the metal implant as claimed in claim 1 , further comprising immersing the metal implant having the porous oxide layer in a weak acid solution under a temperature of 15-30° C. for 10-30 minutes after the porous oxide layer is formed, wherein the weak acid solution has a pH value of 5.0-7.0. 5. The method for surface treatment of the metal implant as claimed in claim 4 , wherein the weak acid solution is a solution of oxalic acid, citric acid, lactic acid, formic acid or carbonic acid.
Anodisation with spark discharge · CPC title
containing inorganic acids · CPC title
Pretreatment {, e.g. desmutting} · CPC title
Chemical after-treatment · CPC title
of refractory metals or alloys based thereon · CPC title
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