Atomic layer deposition of metal phosphates and lithium silicates

Patent metadata

Field	Value
Publication number	US-9765431-B2
Application number	US-201615073275-A
Country	US
Kind code	B2
Filing date	Mar 17, 2016
Priority date	Mar 30, 2011
Publication date	Sep 19, 2017
Grant date	Sep 19, 2017

Abstract

The present application relates to atomic layer deposition (ALD) processes for producing metal phosphates such as titanium phosphate, aluminum phosphate and lithium phosphate, as well as to ALD processes for depositing lithium silicates.

First claim

What is claimed is:

1. A process for forming a lithium silicate thin film on a substrate in a reaction chamber, the process comprising a plurality of lithium silicate atomic layer deposition cycles, each cycle comprising:
contacting the substrate with a vapor phase two-metal reactant comprising Li and Si to form no more than about a single molecular layer of a first species on the substrate; and
contacting the substrate with a vapor phase oxygen reactant such that the vapor phase oxygen reactant reacts with the first species on the substrate to form lithium silicate, wherein both lithium and silicon from the two-metal reactant are incorporated in the lithium silicate.

2. The process of claim 1 , wherein the two-metal reactant is a lithium alkylsilylamide.

3. The process of claim 2 , wherein the two-metal reactant is lithium hexamethyldisilazide (LiHMDS).

4. The process of claim 1 , wherein the oxygen reactant is selected from molecular oxygen, ozone, water, and oxygen plasma.

5. The process of claim 1 , wherein the oxygen reactant is ozone.

6. The process of claim 1 , wherein the lithium silicate is selected from Li 2 SiO 3 , Li 2 Si 2 O 5 , Li 4 SiO 4 and Li 8 SiO 6 .

7. The process of claim 1 , additionally comprising one or more aluminum oxide atomic layer deposition cycles.

8. The process of claim 1 , additionally comprising one or more lithium oxide atomic layer deposition cycles.

9. The process of claim 1 , additionally comprising one or more silicon oxide atomic layer deposition cycles.

10. The process of claim 1 , wherein the process is carried out at a deposition temperature of about 150° C. to about 400° C.

11. The process of claim 1 , wherein the two-metal reactant and the oxygen reactant are the only two reactants used.

12. A process for forming a lithium silicate thin film on a substrate in a reaction chamber, the process comprising a plurality of lithium silicate atomic layer deposition cycles, each cycle comprising:
contacting the substrate with a vapor phase two-metal reactant comprising Li and Si to form no more than about a single molecular layer of a first species on the substrate; and
contacting the substrate with a vapor phase oxygen reactant such that the vapor phase oxygen reactant reacts with the first species on the substrate to form lithium silicate, wherein the two-metal reactant and the oxygen reactant are the only two reactants used.

13. The process of claim 1 , wherein the lithium silicate has a conductivity at room temperature of greater than about 1×10 −5 S/cm.

14. The process of claim 1 , wherein the lithium silicate is used as an electrode material.

15. The process of claim 1 , further comprising removing excess two-metal reactant from the reaction chamber subsequent to contacting the substrate with the two-metal reactant.

16. The process of claim 1 , further comprising removing excess oxygen reactant and reaction byproducts, if any, from the reaction chamber, subsequent to contacting the substrate with the oxygen reactant.

17. A method of depositing a lithium silicate by atomic layer deposition, comprising alternately and sequentially contacting a substrate with lithium bis(trimethylsilyl)amide and ozone.

18. The method of claim 17 , wherein the lithium silicate has a conductivity at room temperature of greater than about 1×10 −5 S/cm.

19. The method of claim 17 , wherein the lithium bis(trimethylsilyl)amide and ozone are the only two reactants used.

20. The method of claim 17 , wherein the lithium silicate is Li 2 SiO 3 .

Assignees

• Asm Ip Holding Bv

Inventors

• Hamalainen Jani
• Holopainen Jani
• Hatanpaa Timo
• Ritala Mikko
• Leskela Markku

Classifications

• C23C16/50

  using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)} · CPC title

• C23C16/45527 Primary

  characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations · CPC title

• C23C16/08 Primary

  from metal halides · CPC title

• C23C16/401

  containing silicon · CPC title

• C23C16/18

  from metallo-organic compounds · CPC title