Tunable laser source, optical transmitter, and optical transmitter and receiver module

Patent metadata

Field	Value
Publication number	US-9762034-B2
Application number	US-201615297411-A
Country	US
Kind code	B2
Filing date	Oct 19, 2016
Priority date	Apr 21, 2014
Publication date	Sep 12, 2017
Grant date	Sep 12, 2017

Abstract

A tunable laser source includes a mirror, a tunable filter, and a semiconductor optical amplifier integrated device including first, second, and third semiconductor optical amplifiers between a first end face facing toward the tunable filter and a second end face facing away from the first end face. The first amplifier is closer to the first end face than the second and third amplifiers. The semiconductor optical amplifier integrated device further includes a partially reflecting mirror and an optical divider that are disposed between the first amplifier and the second and third amplifiers. The partially reflecting mirror is closer to the first amplifier than the optical divider. The optical divider includes first and second branches connected to the second and third semiconductor optical amplifiers, respectively. The tunable filter and the first amplifier are disposed in an optical path between the partially reflecting mirror and the mirror that form a laser resonator.

First claim

What is claimed is:

1. A tunable laser source, comprising:
a mirror;
a tunable filter; and
a semiconductor optical amplifier integrated device having a first end face facing toward the tunable filter and a second end face facing away from the first end face, the semiconductor optical amplifier integrated device including
a first semiconductor optical amplifier, a second semiconductor optical amplifier, and a third semiconductor optical amplifier that are disposed between the first end face and the second end face, the first semiconductor optical amplifier being closer to the first end face than the second and third semiconductor optical amplifiers;
a partially reflecting mirror; and
an optical divider including a first branch connected to the second semiconductor optical amplifier and a second branch connected to the third semiconductor optical amplifier,

wherein the partially reflecting mirror and the optical divider are disposed between the first semiconductor optical amplifier and the second and third semiconductor optical amplifiers, the partially reflecting mirror being closer to the first semiconductor optical amplifier than the optical divider,
wherein the partially reflecting mirror and the mirror form a laser resonator, and
wherein the tunable filter and the first semiconductor optical amplifier are disposed in an optical path between the partially reflecting mirror and the mirror.

2. The tunable laser source as claimed in claim 1 , wherein
the semiconductor optical amplifier integrated device includes a semiconductor substrate and a plurality of semiconductor layers stacked on the semiconductor substrate, and
a groove is formed in the plurality of semiconductor layers between the first semiconductor optical amplifier and the optical divider to expose an end face of an active layer of the first semiconductor optical amplifier, the end face serving as the partially reflecting mirror.

3. The tunable laser source as claimed in claim 2 , wherein
each of the first, second, and third semiconductor optical amplifiers has a layered structure of a first cladding layer stacked on the semiconductor substrate, the active layer stacked on the first cladding layer, and a second cladding layer stacked on the active layer, and
the optical divider has a layered structure of the first cladding layer stacked on the semiconductor substrate, a waveguide core layer stacked on the first cladding layer, and the second cladding layer stacked on the waveguide core layer.

4. The tunable laser source as claimed in claim 2 , further comprising:
a bottom electrode on a surface of the semiconductor substrate facing away from the plurality of semiconductor layers;
a first electrode on the first semiconductor optical amplifier;
a second electrode on the second semiconductor optical amplifier; and
a third electrode on the third semiconductor optical amplifier,
wherein the second semiconductor optical amplifier and the third semiconductor optical amplifier are configured to be independently supplied with an electric current from the second electrode and the third electrode, respectively.

5. The tunable laser source as claimed in claim 1 , wherein the partially reflecting mirror is a distributed Bragg reflector including a diffraction grating formed in a semiconductor layer of the semiconductor optical amplifier integrated device.

6. The tunable laser source as claimed in claim 5 , wherein
each of the first, second, and third semiconductor optical amplifiers has a layered structure of a first cladding layer stacked on a semiconductor substrate, an active layer stacked on the first cladding layer, and a second cladding layer stacked on the active layer,
the optical divider has a layered structure of the first cladding layer stacked on the semiconductor substrate, a waveguide core layer stacked on the first cladding layer, and the second cladding layer stacked on the waveguide core layer,
each of the first cladding layer, the active layer, the waveguide core layer, and the second cladding layer is formed of a semiconductor, and
the diffraction grating is formed in the first cladding layer or the second cladding layer in a region of the semiconductor optical amplifier integrated device where the distributed Bragg reflector is formed.

7. The tunable laser source as claimed in claim 6 , further comprising:
a bottom electrode on a surface of the semiconductor substrate facing away from the first cladding layer;
a first electrode on the first semiconductor optical amplifier;
a second electrode on the second semiconductor optical amplifier; and
a third electrode on the third semiconductor optical amplifier,
wherein the second semiconductor optical amplifier and the third semiconductor optical amplifier are configured to be independently supplied with an electric current from the second electrode and the third electrode, respectively.

8. The tunable laser source as claimed in claim 1 , wherein the tunable filter includes a plurality of wavelength filters each configured to select periodic wavelengths, and is configured to variably select a wavelength because of a Vernier effect due to the plurality of wavelength filters.

9. The tunable laser source as claimed in claim 1 , further comprising:
a fourth semiconductor optical amplifier closer to the second end face than the first semiconductor optical amplifier,
wherein the partially reflecting mirror and the optical divider are disposed between the first semiconductor optical amplifier and the second, third, and fourth semiconductor optical amplifiers,
the optical divider further includes a branch connected to the fourth semiconductor optical amplifier,
the optical divider is configured to divide a laser beam emitted through the partially reflecting mirror into a first laser beam, a second laser beam, and a third laser beam, and
the first, second, and third laser beams enter the second, third, and fourth semiconductor optical amplifiers, respectively, to be amplified to exit from the second end face of the semiconductor optical amplifier integrated device.

10. The tunable laser source as claimed in claim 1 , wherein
the semiconductor optical amplifier integrated device is disposed on a silicon substrate, and
the tunable filter and the mirror are formed of a silicon waveguide formed in a surface of the silicon substrate.

11. An optical transmitter, comprising:
the tunable laser source as set forth in claim 10 , and
a coherent optical modulator formed of another silicon waveguide formed in the surface of the silicon substrate.

12. An optical transmitter and receiver module, comprising:
the optical transmitter as set forth in claim 11 ;
a first light-receiving element configured to detect a part of a laser beam emitted from the second semiconductor optical amplifier; and
a second light-receiving element configured to detect a part of a laser beam emitted from the third semiconductor optical amplifier.

13. The optical transmitter and receiver module as claimed in claim 12 , further comprising:
a first power supply configured to supply an electric current to the first semiconductor optical amplifier;
a second power supply configured to supply an electric current to the second semiconductor optical amplifier;
a third power supply configured to supply an electric current to the third semiconductor optical amplifier; and
a controller configured to control the electric current supplied by the second power supply to the second semiconductor optical amplifier based on a power of the part of the laser beam detected at the first light-receiving element, and to control the electric current suppl

Assignees

• Fujitsu Ltd

Inventors

• Takabayashi Kazumasa
• Yamamoto Tsuyoshi

Classifications

• H01S5/04256

  characterised by the configuration · CPC title

• H01S5/026

  Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers (stabilisation of output H01S5/06) · CPC title

• H01S5/142

  which comprises an additional resonator · CPC title

• H01S5/0085

  for modulating the output, i.e. the laser beam is modulated outside the laser cavity · CPC title

• H01S5/2275

  mesa created by etching · CPC title