Modulated light source
US-2015355482-A1 · Dec 10, 2015 · US
US9106046B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9106046-B2 |
| Application number | US-201214349394-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 17, 2012 |
| Priority date | Oct 20, 2011 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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An integrated optical structure includes at least one optical isolator, having a magneto-optical layer, associated with at least one SOA optical amplifier having a waveguide having an n-doped semiconductor layer, a p-doped semiconductor layer, and an active area disposed between the n-doped semiconductor layer and the p-doped semiconductor layer. The optical isolator is disposed between an SOI base and the SOA optical amplifier's waveguide. The optical isolator's magneto-optical layer is disposed between a lower insulating layer and an upper insulating layer. The optical isolator's magneto-optical layer may be a layer of ferromagnetic metallic material, such as a Fe—Co metallic alloy, or a magnetic oxide layer. An optical device includes at least one integrated optical structure.
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There is claimed: 1. An integrated optical structure comprising at least one SOA optical amplifier comprising a waveguide comprising an n-doped semiconductor layer, a p-doped semiconductor layer, and an active zone disposed between the n-doped semiconductor layer and the p-doped semiconductor layer, associated with at least one optical isolator disposed between a SOI base and the SOA optical amplifier's waveguide, comprising a magneto-optical layer, wherein the magneto-optical…
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