Radiation image sensor

Patent metadata

Field	Value
Publication number	US-9761631-B2
Application number	US-201415102376-A
Country	US
Kind code	B2
Filing date	Nov 28, 2014
Priority date	Dec 9, 2013
Publication date	Sep 12, 2017
Grant date	Sep 12, 2017

Abstract

A radiation image sensor includes a charge generation section and, a circuit board accumulating and transferring charge generated in the charge generation section. The circuit board includes a semiconductor substrate, a capacitive section accumulating the charge generated in the charge generation section, and a MOS transistor in the semiconductor substrate. The MOS transistor includes one end connected to the capacitive section and another end connected to a wire transferring the charge. The capacitive section includes a partial region of the semiconductor substrate, a conductor layer disposed on the partial region and electrically connected to the charge generation section, and an insulating layer interposed between the partial region and the conductor layer.

First claim

The invention claimed is:

1. A radiation image sensor comprising:
a charge generation section absorbing radiation to generate charge; and
a circuit board accumulating and transferring the charge generated in the charge generation section,
wherein the charge generation section is disposed on the circuit board,
wherein the circuit board includes:
a semiconductor substrate;
a metal film including a connection pad electrically connected to the charge generation section;
a capacitive section accumulating the charge generated in the charge generation section; and
a MOS transistor in the semiconductor substrate, the MOS transistor including one end connected to the capacitive section and another end connected to a wire transferring the charge, and

wherein the capacitive section includes a partial region of the semiconductor substrate, a conductor layer disposed on the partial region and electrically connected to the charge generation section, and an insulating layer interposed between the partial region and the conductor layer, and
wherein the metal film is electrically connected to the conductor layer, and is disposed in such a manner that the metal film and the conductor layer overlap each other in a thickness direction of the circuit board.

2. The radiation image sensor according to claim 1 ,
wherein the conductor layer is made of a same material as a constituent material of a gate electrode of the MOS transistor.

3. The radiation image sensor according to claim 1 ,
wherein the capacitive section further includes an impurity diffused region in which an impurity to impart a conductivity type different from a conductivity type of the semiconductor substrate is diffused, the impurity diffused region being located next to the partial region of the semiconductor substrate, and
wherein the impurity diffused region and the conductor layer are electrically connected to each other.

4. The radiation image sensor according to claim 1 ,
wherein the charge generation section of bulk and the circuit board are connected to each other by bump bonding.

5. The radiation image sensor according to claim 1 ,
wherein the charge generation section is made by depositing a material that absorbs radiation to generate charge on the circuit board.

6. The radiation image sensor according to claim 1 ,
wherein the entire conductor layer overlaps the metal film in the thickness direction of the circuit board.

7. A radiation image sensor comprising:
a charge generation section absorbing radiation to generate charge; and
a circuit board accumulating and transferring the charge generated in the charge generation section,
wherein the charge generation section is disposed on the circuit board,
wherein the circuit board includes:
a semiconductor substrate;
a capacitive section accumulating the charge generated in the charge generation section; and
a MOS transistor in the semiconductor substrate, the MOS transistor including one end connected to the capacitive section and another end connected to a wire transferring the charge, and

wherein the capacitive section includes a partial region of the semiconductor substrate, a conductor layer disposed on the partial region and electrically connected to the charge generation section, and an insulating layer interposed between the partial region and the conductor layer,
wherein the capacitive section further includes an impurity diffused region in which an impurity to impart a conductivity type different from a conductivity type of the semiconductor substrate is diffused, the impurity diffused region being located next to the partial region of the semiconductor substrate, and
wherein the impurity diffused region and the conductor layer are electrically connected to each other.

Assignees

• Hamamatsu Photonics Kk

Inventors

• Fujita Kazuki
• Ichikawa Minoru
• Mori Harumichi

Classifications

• H01L27/14634

  Electricity · mapped topic

• H01L27/148 Primary

  Electricity · mapped topic

• H01L27/14636

  Electricity · mapped topic

• H10F39/811

  Interconnections · CPC title

• H10F39/8037

  the integrated elements comprising a transistor · CPC title