Passivation structure and method of making the same

Patent metadata

Field	Value
Publication number	US-9761504-B2
Application number	US-201514960974-A
Country	US
Kind code	B2
Filing date	Dec 7, 2015
Priority date	Jun 29, 2012
Publication date	Sep 12, 2017
Grant date	Sep 12, 2017

Abstract

A passivation structure includes a bottom dielectric layer. The passivation structure further includes a doped dielectric layer over the bottom dielectric layer. The doped dielectric layer includes a first doped layer and a second doped layer. The passivation structure further includes a top dielectric layer over the doped dielectric layer.

First claim

What is claimed is:

1. A semiconductor device, the semiconductor device comprising:
a passivation structure, the passivation structure including:
a bottom dielectric layer;
a doped dielectric layer over the bottom dielectric layer, wherein the doped dielectric layer comprises:
a first doped layer having a first dopant concentration;
a second doped layer having a second dopant concentration; and
a third doped layer having a third dopant concentration, wherein the third dopant concentration is different from at least one of the first dopant concentration and the second dopant concentration; and

a top dielectric layer over the doped dielectric layer.

2. The semiconductor device of claim 1 , wherein the bottom dielectric layer is an undoped or unintentially doped silicon oxide.

3. The semiconductor device of claim 1 , further comprising:
an inter metal dielectric (IMD) layer and a metal layer underlying the passivation structure.

4. The semiconductor device of claim 3 , wherein the metal layer is a contact.

5. The semiconductor device of claim 1 , wherein the doped dielectric layer includes silicon oxide.

6. The semiconductor device of claim 1 , wherein the first dopant concentration and the second dopant concentration are different concentrations of a same dopant type.

7. The semiconductor device of claim 1 , wherein the first dopant layer and the second dopant layer have a different dopant species.

8. The semiconductor device of claim 1 , wherein the first dopant layer is a first type of dielectric with a first dopant type and the second dopant layer is a second type of dielectric, different than the first type of dielectric, and with the first dopant type.

9. A semiconductor device, the semiconductor device comprising:
an inter-layer dielectric (ILD) layer and a metal layer over a substrate; and
a passivation structure over the ILD layer and the metal layer, the passivation structure including:
a bottom dielectric layer;
a doped dielectric layer over the bottom dielectric layer, wherein the doped dielectric layer comprises:
a first doped layer having a first dopant concentration;
a second doped layer on the first doped layer, the second doped layer having a second dopant concentration, wherein the second dopant concentration is different than the first dopant concentration; and

a top dielectric layer over the doped dielectric layer.

10. The semiconductor device of claim 9 , further comprising:
a molding compound layer over the top dielectric layer.

11. The semiconductor device of claim 9 , wherein the doped dielectric layer further comprises: a third doped layer having a third dopant concentration and disposed over the second doped layer, wherein second dopant concentration is greater than the first dopant concentration and the third dopant concentration.

12. The semiconductor device of claim 9 , wherein the doped dielectric layer further comprises: a third doped layer having a third dopant concentration and disposed over the second doped layer, wherein third dopant concentration is greater than the first dopant concentration and the second dopant concentration.

13. The semiconductor device of claim 9 , wherein the bottom dielectric layer and the top dielectric layer are undoped or intentionally doped.

14. A device having a passivation structure, the device comprising:
the passivation structure including:
a doped dielectric layer over a bottom dielectric layer, wherein forming the doped dielectric layer has a varying dopant concentration as a distance from the bottom dielectric layer increases; and
a top dielectric layer is disposed over the doped dielectric layer.

15. The device of claim 14 , wherein the doped dielectric layer includes tetraethyl orthosilicate (TEOS).

16. The device of claim 14 , wherein the doped dielectric layer includes the varying dopant concentration of phosphorus.

17. The device of claim 14 , further comprising:
a molding compound layer over the top dielectric layer.

18. The device of claim 14 , wherein the doped dielectric layer includes the varying dopant concentration of boron.

19. The device of claim 14 , wherein the doped dielectric layer includes silicon oxide.

20. The device of claim 14 , wherein the varying dopant concentration includes a variation of both of phosphorous and boron.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chuang Cheng-Chi
• Huang Kun-Ming
• Hung Hsuan-Hui
• Lin Ming-Yi

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• H10P14/683

  carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC · CPC title

• H10P14/60

  of insulating materials · CPC title