Electroplating methods for semiconductor substrates

Patent metadata

Field	Value
Publication number	US-9758893-B2
Application number	US-201414222407-A
Country	US
Kind code	B2
Filing date	Mar 21, 2014
Priority date	Feb 7, 2014
Publication date	Sep 12, 2017
Grant date	Sep 12, 2017

Abstract

A non-uniform initial metal film is non-uniformly deplated to provide a more uniform metal film on a substrate. Electrochemical deplating may be performed by placing the substrate in a deplating bath formulated specifically for deplating, rather than for plating. The deplating bath may have a throwing power of 0.3 or less; or a bath conductivity of 1 mS/cm to 250 mS/cm. Reverse electrical current conducted through the deplating bath non-uniformly. electro-etches or deplates the metal film.

First claim

The invention claimed is:

1. A method for plating a substrate, comprising:
providing the substrate comprising a low current density crowding region and a high current density crowding region;
moving the substrate into a first bath having a first throwing power greater than 0.7;
conducting electric current at a first polarity through the first bath to deposit an initial layer onto the substrate, wherein the initial layer has at least 3% non-uniformity between the thickness of material deposited in the low current density crowding region versus the thickness of material deposited in the high current density crowding region on the substrate;
moving the substrate into a second bath having a throwing power of 0.3 or less;
wherein throwing power is equal to a layer thickness deposited or removed in the low current density crowding region/a layer thickness deposited or removed in the high current density crowding region;
conducting electric current at a second polarity, opposite the first polarity, through the second bath to partially deplate the initial layer, wherein the partial deplating in the second bath removes the initial layer at the high current crowding density region faster than at the low current crowding density region such that the initial non-uniformity is reduced by at least 30%.

2. The method of claim 1 wherein the second bath has a throwing power of 0.3 to 0.1.

3. The method of claim 1 wherein the second bath has bath conductivity between 1 to 250 mS/cm.

4. The method of claim 3 wherein the second bath has bath conductivity between 10 to 100 mS/cm.

5. The method of claim 4 with the substrate having a photoresist or mask layer.

6. The method of claim 5 wherein the initial layer thickness is deplated by at least 10%.

7. The method of claim 1 with the first bath in a first processing chamber and the second bath in a second processing chamber, further comprising moving the substrate from the first processing chamber to the second processing chamber.

8. The method of claim 1 further comprising removing the substrate from the first bath and exposing it to the second bath all within the same processing chamber.

9. A method for plating a patterned substrate to reduce within-die non-uniformity of a metal film plated onto the patterned substrate, comprising:
moving the patterned substrate into a first bath having a first throwing power greater than 0.7, with the patterned substrate having a low current density crowding region and a high current density crowding region;
conducting electric current at a first polarity through the first bath to deposit an initial layer onto the patterned substrate, wherein the initial layer has at least 3% non-uniformity between the thickness of material deposited in the low current density crowding region versus the thickness of material deposited in the high current density crowding region on the patterned substrate;
moving the patterned substrate into a second bath having a throwing power of 0.3 or less;
wherein throwing power is equal to a layer thickness deposited or removed in the low current density crowding region/a layer thickness deposited or removed in the high current density crowding region;
conducting electric current at a second polarity, opposite the first polarity, through the second bath to partially and non-uniformly deplate the initial layer, wherein the partial deplating in the second bath removes the initial layer at the high current crowding density region faster than at the low current crowding density region such that the initial non-uniformity is reduced by at least 30%.

10. The method of claim 9 wherein the second bath has a throwing power of 0.3 to 0.1.

11. The method of claim 9 wherein the second bath has bath conductivity between 1 to 250 mS/cm.

12. The method of claim 11 wherein the second bath has bath conductivity between 10 to 100 mS/cm.

13. The method of claim 9 wherein the initial layer thickness is deplated by at least 10%.

14. The method of claim 9 with the first bath in a first processing chamber and the second bath in a second processing chamber, further comprising moving the substrate from the first processing chamber to the second processing chamber.

15. The method of claim 9 further comprising removing the substrate from the first bath and exposing it to the second bath all within the same processing chamber.

Assignees

• Applied Materials Inc

Inventors

• Lee Sam K
• Sharbono Charles

Classifications

• H10W20/0261

  characterised by the filling method or the material of the conductive fill · CPC title

• H10P95/04

  Planarisation of conductive or resistive materials · CPC title

• H10P14/47

  Electrolytic deposition, i.e. electroplating; Electroless plating · CPC title

• H10W20/062

  by smoothing of conductive parts, e.g. by planarisation · CPC title

• H10W20/023

  the interconnections being through-semiconductor vias · CPC title