Acid mist suppression in copper electrowinning
US-12098474-B2 · Sep 24, 2024 · US
US9758885B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9758885-B2 |
| Application number | US-201314438688-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 30, 2013 |
| Priority date | Nov 9, 2012 |
| Publication date | Sep 12, 2017 |
| Grant date | Sep 12, 2017 |
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A composition comprising a source of metal ions and at least one additive comprising at least one polyaminoamide, said polyaminoamide comprising the structural unit represented by formula I or derivatives of the polyaminoamide of formula I obtainable by complete or partial protonation, N-functionalization or N-quaternization with a non-aromatic reactant, wherein D 6 is, for each repeating unit 1 to s independently, a divalent group selected from a saturated or unsaturated C 1 -C 20 organic radical, D 7 is, for each repeating unit 1 to s independently, a divalent group selected from straight chain or branched C 2 -C 20 alkanediyl, which may optionally be interrupted by heteroatoms or divalent groups selected from O, S and NR 10 , R 1 is, for each repeating unit 1 to s independently, selected from H, C 1 -C 20 alkyl, and C 1 -C 20 alkenyl, which may optionally be substituted by hydroxyl, alkoxy or alkoxycarbonyl, or, together with R 2 , may form a divalent group D 8 , and R 2 is, for each repeating unit 1 to s independently, selected from H, C 1 -C 20 alkyl, and C 1 -C 20 alkenyl, which may optionally be substituted by hydroxyl, alkoxy or alkoxycarbonyl, or, together with R 1 , may form a divalent group D 8 , and D 8 is selected from straight chain or branched C 1 -C 18 alkanediyl, which may optionally be interrupted by heteroatoms or divalent groups selected from O, S and NR 10 , s is an integer from 1 to 250, R 10 is selected from H, C 1 -C 20 alkyl, and C 1 -C 20 alkenyl, which may optionally be substituted by hydroxyl, alkoxy or alkoxycarbonyl.
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The invention claimed is: 1. A composition, comprising: a source of metal ions, at least one additive comprising at least one polyaminoamide comprising a structural unit represented by the formula I: or a derivative of the polyaminoamide of the formula I obtained by complete or partial protonation, N-functionalization or N-quaternization with a non-aromatic reactant, wherein D 6 is selected from a straight chain or branched, acyclic or cyclic C 1 -C 20 alkanediyl, wherein D 6 is the same or different when s is more than 1, D 7 is a divalent group selected from straight chain or branched C 2 -C 20 alkanediyl, which may optionally be interrupted by heteroatoms or divalent groups selected from O, S and NR 10 , wherein D 7 is the same or different when s is more than 1, R 1 is selected from H, C 1 -C 20 alkyl, and C 1 -C 20 alkenyl, which may optionally be substituted by hydroxyl, alkoxy or alkoxycarbonyl, or, together with R 2 , may form a divalent group D 8 , wherein R 1 is the same or different when s is more than 1, R 2 is selected from H, C 1 -C 20 alkyl, and C 1 -C 20 alkenyl, which may optionally be substituted by hydroxyl, alkoxy or alkoxycarbonyl, or, together with R 1 , may form a divalent group D 8 , wherein R 2 is the same or different when s is more than 1, D 8 is selected from straight chain or branched C 1 -C 18 alkanediyl, which may optionally be interrupted by heteroatoms or divalent groups selected from O, S and NR 10 , s is an integer from 1 to 250, and R 10 is selected from H, C 1 -C 20 alkyl, and C 1 -C 20 alkenyl, which may optionally be substituted by hydroxyl, alkoxy or alkoxycarbonyl, and an accelerating agent. 2. The composition according to claim 1 , wherein the polyaminoamide is represented by the formula IV: wherein E 3 , E 4 are independently selected from the group consisting of: (a) NH—C 1 -C 20 -alkyl or NH—C 1 -C 20 -alkenyl, (b) N—(C 1 -C 20 -alkyl) 2 or N—(C 1 -C 20 -alkenyl) 2 or N—(C 1 -C 20 -alkyl)(C 1 -C 20 -alkenyl) (c) NR 2 -D 7 -NR 2 H, and (d) NR 2 -D 7 -NR 2 —CH 2 —CH 2 —CO—NH—(C 1 -C 20 -alkyl) or NR 2 -D 7 -NR 2 —CH 2 —CH 2 —CO—NH—(C 1 -C 20 -alkenyl). 3. The composition according to claim 2 , wherein E 3 and E 4 are independently defined as NR 1 -D 7 -NR 2 H. 4. The composition according to claim 1 , wherein the metal ions comprise copper ion. 5. The composition according to claim 1 , wherein: D 6 is (CH 2 ) g , and g is an integer from 1 to 6. 6. The composition according to claim 1 , wherein D 7 is a straight chain C 2 - to C 6 -alkanediyl. 7. The composition according to claim 1 , wherein s is an integer from 1 to 150. 8. The composition according to claim 1 , wherein R 1 is selected from the group consisting of H, C 1 -C 20 -alkyl, and C 1 -C 20 -alkenyl, which may optionally be substituted by hydroxyl, alkoxy or alkoxycarbonyl. 9. The composition according to claim 1 , wherein R 2 is selected from the group consisting of H, C 1 -C 20 -alkyl, and C 1 -C 20 -alkenyl, which may optionally be substituted by hydroxyl, alkoxy or alkoxycarbonyl. 10. The composition according to claim 1 , wherein R 1 and R 2 together form a divalent group D 8 , with D 8 being a straight chain or branched C 1 -C 18 alkanediyl, which may optionally be interrupted by at least one heteroatom or divalent group selected from the group consisting of O, S and NR 10 , with R 10 being selected from H, C 1 -C 20 alkyl, and C 1 -C 20 alkenyl, which may optionally be substituted by hydroxyl, alkoxy or alkoxycarbonyl. 11. The composition according to claim 1 , further comprising a suppressing agent. 12. The composition according to claim 1 , wherein s is an integer from 2 to 100. 13. The composition according to claim 1 , wherein s is an integer from 2 to 50. 14. A process for depositing a metal layer on a substrate, the process comprising: a) contacting a metal plating bath comprising the composition according to claim 1 with a substrate; and b) applying a current density to the substrate for a time sufficient to deposit a metal layer onto the substrate. 15. The process according to claim 14 , wherein the substrate comprises micrometer or nanometer sized features and the deposition is performed to fill the micrometer or nanometer sized features. 16. The process according to claim 15 , wherein the nanometer-sized features have a size from 1 to 1000 nm, an aspect ratio of 4 or more, or both.
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