Power amplifier with improved low bias mode linearity
US-9337787-B2 · May 10, 2016 · US
US9755595B1 · US · B1
| Field | Value |
|---|---|
| Publication number | US-9755595-B1 |
| Application number | US-201615130691-A |
| Country | US |
| Kind code | B1 |
| Filing date | Apr 15, 2016 |
| Priority date | Apr 15, 2016 |
| Publication date | Sep 5, 2017 |
| Grant date | Sep 5, 2017 |
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A device includes: a transistor having an input terminal configured to receive an input signal and to amplify the input signal; a bias current source configured to set a bias current of the input terminal of the transistor, the bias current source having a control input for receiving a control signal for selecting the bias current to have one of a plurality of selectable bias current levels; a bias resistance connected between the bias current source and the input terminal of the transistor; a bypass switch for selectively bypassing a first part of the bias resistance; and a control circuit for controlling the bypass switch to bypass the part of the bias resistance for a predefined time period in response to a change in the bias current level, and for controlling the bypass switch to stop bypassing the first part of the bias resistance after the predefined time period expires.
Opening claim text (preview).
The invention claimed is: 1. A device, comprising: a transistor having an input terminal configured to receive an input signal and to amplify the input signal; a bias current source configured to set a bias current of the input terminal of the transistor, the bias current source having a control input for receiving a control signal for selecting the bias current to have one of a plurality of selectable bias current levels; a bias resistance connected between the bias current source and the input terminal of the transistor; a bypass switch for selectively bypassing a first part of the bias resistance; and a control circuit for controlling the bypass switch to bypass the first part of the bias resistance for a predefined time period in response to a change in bias current level, and for controlling the bypass switch to stop bypassing the first part of the bias resistance after the predefined time period expires, wherein the control signal comprises a digital control word, and wherein the control circuit is configured to receive the control signal. 2. The device of claim 1 , wherein the digital control word comprises a plurality of bits, and wherein the control circuit detects a change in a value of at least one of the bits and in response thereto, controls the bypass switch to bypass the first part of the bias resistance for the predefined time period after the change in the value of at least one of the bits, and to stop bypassing the first part of the bias resistance after the predefined time period expires. 3. The device of claim 2 , wherein the control circuit comprises: a plurality of bit transition detection circuits each corresponding to one of the plurality of bits of the digital control word, each bit transition detection circuit having an output and being configured to produce at its output, in response to the corresponding one of the plurality of bits' changing its value, a corresponding bit change detection pulse having a pulse width corresponding to the predefined time period; and a logic circuit configured to logically combine output signals of the bit transition detection circuits and to produce a control pulse for controlling the bypass switch to bypass the first part of the bias resistance for the predefined time period in response to a bit change detection pulse in any of the outputs of the bit transition detection circuits. 4. The device of claim 3 , wherein each of the bit transition detection circuits comprises a monostable multivibrator. 5. The device of claim 3 , wherein each of the bit transition detection circuits comprises: at least two inverters and a delay circuit arranged in series and configured to receive the corresponding one of the plurality of bits and to output a corresponding delayed bit; and an exclusive OR (XOR) gate configured to receive the corresponding one of the plurality of bits, and the corresponding delayed bit and in response thereto to output the bit change detection pulse when the corresponding one of the plurality of bits changes its value. 6. The device of claim 3 , wherein the logic circuit includes a NOR gate configured to receive at its inputs the output signals of the bit transition detection circuits and in response thereto to output the control pulse. 7. The device of claim 6 , wherein the bypass switch comprises a P-channel field effect transistor. 8. The device of claim 3 , wherein the logic circuit includes: a NOR gate configured to receive at its inputs the output signals of the bit transition detection circuits; and an inverter connected to an output of the NOR gate and to output the control pulse in response to the output signals of the bit transition detection circuits. 9. The device of claim 6 , wherein the bypass switch comprises an N-channel field effect transistor. 10. An amplifier, comprising: an amplifying transistor having an input terminal configured to receive an input signal and to amplify the input signal; an adjustable current source configured to set a bias current of the input terminal of the amplifying transistor, the adjustable current source having a control input for receiving a digital control word for selecting the bias current to have one of a plurality of selectable bias current levels; a first resistor and a second resistor connected in series between the adjustable current source and the input terminal of the amplifying transistor; a transistor switch connected across the second resistor for selectively bypassing the second resistor; and a control circuit connected to a control terminal of the transistor switch, wherein the control circuit comprises: a plurality of bit transition detection circuits each corresponding to one of the plurality of bits of the digital control word, each bit transition detection circuit comprising: at least two inverters and a delay circuit arranged in series and configured to receive the corresponding one of the plurality of bits, and to output a corresponding delayed bit, and an exclusive OR (XOR) gate configured to receive the corresponding one of the plurality of bits, and the corresponding delayed bit and in response thereto to output a bit change detection pulse when a value of the corresponding one of the plurality of bits changes, and a logic circuit configured to logically combine output signals of the XOR gates of the bit transition detection circuits and to produce a control pulse for controlling the transistor switch to bypass the second resistor for a predefined time period in response to a bit change detection pulse in any of the outputs of the bit transition detection circuits. 11. The amplifier of claim 10 , wherein the logic circuit includes a NOR gate configured to receive at its inputs the output signals of the bit transition detection circuits and in response thereto to output the control pulse. 12. The amplifier of claim 11 , wherein the transistor switch comprises a P-channel field effect transistor. 13. The amplifier of claim 10 , wherein the logic circuit includes: a NOR gate configured to receive at its inputs the output signals of the bit transition detection circuits; and an inverter connected to an output of the NOR gate and to output the control pulse in response to the output signals of the bit transition detection circuits. 14. The amplifier of claim 13 , wherein the transistor switch comprises an N-channel field effect transistor. 15. The amplifier of claim 10 , wherein the first resistor is connected between the second resistor and the input terminal of the amplifying transistor.
with control of the polarisation voltage or current, e.g. gliding Class A · CPC title
using field-effect transistors [FET] · CPC title
the amplifier being a low noise amplifier [LNA] · CPC title
with field-effect devices (H03F3/195 takes precedence) · CPC title
the amplifier being a radio frequency amplifier · CPC title
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