Semiconductor device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9754949-B2
Application number	US-201615242489-A
Country	US
Kind code	B2
Filing date	Aug 20, 2016
Priority date	Aug 24, 2015
Publication date	Sep 5, 2017
Grant date	Sep 5, 2017

Abstract

An insulating film made of the same material as that of a gate insulating film is formed so as to cover one sidewall of a control gate on a conducting film for floating gate. By selectively removing the conducting film for floating gate with the insulating film as a mask, a floating gate is formed from the conducting film for floating gate, and a portion of the gate insulating film is exposed at the floating gate. A nitrogen introduced portion is formed by introducing nitrogen into the exposed portion of the gate insulating film. Then, the insulating film is removed to expose an upper surface of a lateral protrusion of the floating gate. An erase gate is formed so as to face the upper surface and a side surface of the lateral protrusion.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, comprising the steps of:
forming a gate insulating film on a main surface of a semiconductor substrate;
forming a conducting film for floating gate on the gate insulating film;
forming a control gate on the conducting film for floating gate with a first insulating film interposed therebetween;
forming a first sidewall insulating film made of the same material as that of the gate insulating film, so as to cover one sidewall of the control gate on the conducting film for floating gate;
by selectively removing the conducting film for floating gate with the first sidewall insulating film as a mask, forming a floating gate from the conducting film for floating gate, and exposing a portion of the gate insulating film at the floating gate;
forming a first nitrogen introduced portion by introducing nitrogen into the exposed portion of the gate insulating film;
after forming the first nitrogen introduced portion, removing the first sidewall insulating film to expose an upper surface of a lateral protrusion of the floating gate protruding laterally from a region immediately below the control gate; and
forming an erase gate so as to face the upper surface and a side surface of the lateral protrusion.

2. The method of manufacturing a semiconductor device according to claim 1 , further comprising the step of, after removing the first sidewall insulating film, removing the first nitrogen introduced portion by anisotropic etching until the main surface of the semiconductor substrate is exposed.

3. The method of manufacturing a semiconductor device according to claim 1 , further comprising the steps of:
after exposing an upper surface of the floating gate, forming a second insulating film so as to cover the floating gate, the control gate and the first nitrogen introduced portion;
after forming the second insulating film, forming a source region by implanting an impurity into the semiconductor substrate; and
after forming the source region, forming a partial nitrogen introduced portion by introducing nitrogen into the second insulating film located on the side surface of the lateral protrusion of the floating gate.

4. The method of manufacturing a semiconductor device according to claim 3 , further comprising the step of removing a portion of the second insulating film other than the partial nitrogen introduced portion.

5. The method of manufacturing a semiconductor device according to claim 4 , further comprising the step of, after removing the portion of the second insulating film other than the partial nitrogen introduced portion, removing the partial nitrogen introduced portion and the first nitrogen introduced portion.

6. The method of manufacturing a semiconductor device according to claim 1 , further comprising the step of, after forming the control gate and before forming the first sidewall insulating film, forming a second nitrogen introduced portion by introducing nitrogen into a portion of the gate insulating film exposed at the conducting film for floating gate at the other sidewall side of the control gate.

7. The method of manufacturing a semiconductor device according to claim 1 , wherein
the step of forming the erase gate includes the step of forming a select gate across the floating gate from the erase gate.

Assignees

• Renesas Electronics Corp

Inventors

• Kodama Satoshi
• Hasegawa Eiji

Classifications

• H01L27/11521 Primary

  Electricity · mapped topic

• H01L29/42328

  Electricity · mapped topic

• H10D64/035

  comprising conductor-insulator-conductor-insulator-semiconductor structures · CPC title

• H10D30/6892 Primary

  having at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate · CPC title

• H10B41/35

  with a cell select transistor, e.g. NAND · CPC title