Functionalized graphene-Pt composites for fuel cells and photoelectrochemical cells

Patent metadata

Field	Value
Publication number	US-9748581-B2
Application number	US-201514634791-A
Country	US
Kind code	B2
Filing date	Feb 28, 2015
Priority date	Feb 28, 2014
Publication date	Aug 29, 2017
Grant date	Aug 29, 2017

Abstract

A method of growing crystals on two-dimensional layered material is provided that includes reversibly hydrogenating a two-dimensional layered material, using a controlled radio-frequency hydrogen plasma, depositing Pt atoms on the reversibly hydrogenated two-dimensional layered material, using Atomic Layer Deposition (ALD), where the reversibly hydrogenated two-dimensional layered material promotes loss of methyl groups in an ALD Pt precursor, and forming Pt-O on the reversibly hydrogenated two-dimensional layered material, using combustion by O 2 , where the Pt-O is used for subsequent Pt half-cycles of the ALD process, where growth of Pt crystals occurs.

First claim

What is claimed:

1. A method of growing crystals on two-dimensional layered material, comprising:
a. reversibly hydrogenating a two-dimensional layered material, using a controlled radio-frequency hydrogen plasma;
b. depositing Pt atoms on said reversibly hydrogenated or on a dehydrogenated two-dimensional layered material, using Atomic Layer Deposition (ALD), wherein said reversibly hydrogenated two-dimensional layered material promotes loss of methyl groups in an ALD Pt precursor, wherein said reversibly hydrogenated two-dimensional layered material is dehydrogenated prior to depositing said Pt using said ALD; and
c. forming Pt-O on said reversibly hydrogenated two-dimensional layered material, using combustion by O 2 , wherein said Pt-O is used for subsequent Pt half-cycles of said ALD process, wherein growth of Pt crystals occurs.

2. The method according to claim 1 , wherein said two-dimensional layered material is selected from the group consisting of graphene, hexagonal boron nitride, and metal dichalcogenides.

3. The method according to claim 2 , wherein said metal dichalcogenides are selected from the group consisting of molybdenum sulfide (MoS 2 ), and tungsten selenide (WSe 2 ).

4. The method according to claim 1 , wherein said dehydrogenating is done by annealing two-dimensional layered material under argon at 300° C.

5. A method of growing crystals on a two-dimensional layered material, comprising:
a. reversibly hydrogenating a two-dimensional layered material, using a controlled radio-frequency hydrogen plasma;
b. depositing crystal-forming molecules on said reversibly hydrogenated or on a dehydrogenated two-dimensional layered material, using atomic layer deposition (ALD), wherein said reversibly hydrogenated two-dimensional layered material promotes loss of methyl groups in an ALD precursor, wherein said reversibly hydrogenated two-dimensional layered material is dehydrogenated prior to depositing said Pt using said ALD; and
c. forming crystal-O x bonds on said reversibly hydrogenated two-dimensional layered material, using combustion by O 2 , wherein said crystal-O x is used for a subsequent half-cycle of said ALD process, wherein growth of said crystals occurs.

6. The method according to claim 5 , wherein said two-dimensional layered material is selected from the group consisting of graphene, hexagonal boron nitride, and dichalcogenides.

7. The method according to claim 6 , wherein said dichalcogenides are selected from the group consisting of molybdenum sulfide (MoS 2 ), and tungsten selenide (WSe 2 ).

8. The method according to claim 5 , wherein said crystal-forming molecule comprises Ti, wherein TiO 2 crystals are formed on said reversibly hydrogenated two-dimensional layered material.

9. The method according to claim 5 , wherein said crystal-forming molecule comprises Al 2 , wherein Al 2 O 3 crystals are formed on said reversibly hydrogenated two-dimensional layered material.

10. The method according to claim 5 , wherein said dehydrogenating is done by annealing two-dimensional layered material under argon at 300° C.

Assignees

• Univ Leland Stanford Junior

Inventors

• Diankov Georgi
• An Jihwan
• Park Joonsuk
• Goldhaber David J K
• Prinz Friedrich B

Classifications

• C23C16/40

  Oxides · CPC title

• C23C16/0272

  Deposition of sub-layers, e.g. to promote the adhesion of the main coating · CPC title

• H01M4/8867

  Vapour deposition · CPC title

• C23C16/45555

  applied in non-semiconductor technology · CPC title

• H01M4/926

  on carbon or graphite · CPC title