Resist overlayer film forming composition for lithography and method for producing semiconductor device using the same

Patent metadata

Field	Value
Publication number	US-9746768-B2
Application number	US-201414761140-A
Country	US
Kind code	B2
Filing date	Jan 24, 2014
Priority date	Jan 24, 2013
Publication date	Aug 29, 2017
Grant date	Aug 29, 2017

Abstract

There is provided a resist overlayer film forming composition for use in a lithography process in semiconductor device production, which does not intermix with a resist, blocks undesirable exposure light particularly in EUV exposure, for example, UV and DUV and selectively transmits EUV alone, and which can be developed with a developer after exposure. A resist overlayer film forming composition comprising: a polymer including an organic group including a linear or branched saturated alkyl group having a carbon atom number of 1 to 10, in which some or all of hydrogen atoms thereof are substituted with fluorine atoms, and an optionally substituted C 8-16 ether compound as a solvent.

First claim

The invention claimed is:

1. A resist overlayer film forming composition comprising:
a polymer including an organic group including a linear or branched saturated alkyl group having a carbon atom number of 1 to 10, in which some or all of hydrogen atoms thereof are substituted with fluorine atoms, and
an optionally substituted C 8-16 ether compound as a solvent,
wherein the polymer includes a unit structure of any one of (Formula 1-1-1) to (Formula 1-4-1) below:

in (Formula 1-1-1) to (Formula 1-4-1), Ar 1 is an organic group including a C 6-18 aromatic ring;
Ar 2 is a methylene group, a tertiary carbon atom, or an organic group including a C 6-18 aromatic ring optionally bonded with Ar 1 through a methylene group or a tertiary carbon atom; the organic group including the aromatic ring included in Ar 1 or Ar 2 includes an organic group including a linear or branched saturated alkyl group having a carbon atom number of 1 to 10, in which some or all of hydrogen atoms thereof are substituted with fluorine atoms, where the number of the organic group including a linear or branched saturated alkyl group having a carbon atom number of 1 to 10 included in Ar1 or Ar 2 is an integer of 1 to 10; and a hydrogen atom of the aromatic ring in Ar 1 or Ar 2 is optionally substituted with a hydroxy group, a halogen atom, a carboxy group, a nitro group, a cyano group, a methylenedioxy group, an acetoxy group, a methylthio group, a C 1-9 alkoxy group, an amino group having a hydrogen atom optionally substituted with a C 1-3 linear alkyl group, a linear, branched, or cyclic saturated alkyl group having a carbon atom number of 1 to 6 or a linear or branched alkyl halide group having a carbon atom number of 1 to 6 in which a hydrogen atom is optionally substituted with a hydroxy group, or a combination of these groups, where the number of substituents for the hydrogen atom of the aromatic ring in Ar 1 or Ar 2 is an integer of 0 to 10.

2. The resist overlayer film forming composition according to claim 1 , wherein Ar 1 is an organic group of (Formula 2-a) to (Formula 2-e) below or a combination thereof, the aromatic ring included in Ar 1 is bonded with Ar 2 , and Ar 2 is a methylene group, an organic group of (Formula 3) below or (Formula 3-1) below:

in (Formula 2-a) to (Formula 2-e), (Formula 3), and (Formula 3-1), R 3 to R 15 and R 17 are independently an organic group including a linear or branched saturated alkyl group having a carbon atom number of 1 to 10, in which some or all of hydrogen atoms thereof are substituted with fluorine atoms; T 3 to T 17 are independently a hydroxy group, a halogen atom, a carboxy group, a nitro group, a cyano group, a methylenedioxy group, an acetoxy group, a methylthio group, a C 1-9 alkoxy group, an amino group having a hydrogen atom optionally substituted with a C 1-3 linear alkyl group, a linear, branched, or cyclic saturated alkyl group having a carbon atom number of 1 to 6 or a linear or branched alkyl halide group having a carbon atom number of 1 to 6 in which a hydrogen atom is optionally substituted with a hydroxy group, or a combination of these groups; Q 1 and Q 2 are a single bond, an oxygen atom, a sulfur atom, a sulfonyl group, a carbonyl group, an imino group, a C 6-40 arylene group, a linear or branched alkylene group having a carbon atom number of 1 to 10 in which a hydrogen atom is optionally substituted with a halogen atom, or a combination of these groups; the alkylene group optionally forms a ring; m1, m2, m5, m6, r4, r5, r8 to r14, t4, t5, and t8 to t14 are independently an integer of 0 to 2; r3, r6, r7, r17, t3, t6, t7, and t17 are independently an integer of 0 to 8; r15 and t15 are independently an integer of 0 to 9; in (Formula 2-a), (Formula 2-b), and (Formula 2-e), the sum of r3 to r15 or r17 that are present in the polymer is an integer of 1 to 10, in which some or all of hydrogen atoms are substituted with fluorine atoms; and in (Formula 2-c) and (Formula 2-d), the sum of r3 to r15 or r17 that are present in the polymer is an integer of 0 to 10; and if the sum of r3 to r15 or r17 in (Formula 2-c) and (Formula 2-d) is 0, at least one of Q 1 and Q 2 includes at least one linear or branched alkylene group having a carbon atom number of 1 to 10, in which some or all of hydrogen atoms are substituted with fluorine atoms.

3. The resist overlayer film forming composition according to claim 2 , wherein in the unit structures of the polymer, any one of T 3 to T 17 includes one or more hydroxy groups.

4. The resist overlayer film forming composition according to claim 2 , wherein R 3 to R 15 , and R 17 are an organic group of (Formula 1-7) below:

(in (Formula 1-7), W 1 and W 2 are independently a hydrogen atom, a fluorine atom, a trifluoromethyl group, a difluoromethyl group, or a monofluoromethyl group; w 3 is a hydrogen atom, a fluorine atom, or a combination thereof; at least one of W 1 , W 2 and w 3 is the organic group including fluorine or a fluorine atom; m4 is an integer of 0 to 9; and the largest value of the number of carbon atoms included in (Formula 1-7) is 10).

Assignees

• Nissan Chemical Ind Ltd

Inventors

• Ohnishi Ryuji
• Sakamoto Rikimaru
• Fujitani Noriaki

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• G03F7/091

  characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement · CPC title

• G03F7/322

  Aqueous alkaline compositions · CPC title

• C08G8/14

  with halogenated phenols · CPC title

• G03F7/325

  Non-aqueous compositions · CPC title