Ignition control circuit with short circuit protection

Patent metadata

Field	Value
Publication number	US-9745947-B2
Application number	US-201414449932-A
Country	US
Kind code	B2
Filing date	Aug 1, 2014
Priority date	Aug 8, 2013
Publication date	Aug 29, 2017
Grant date	Aug 29, 2017

Abstract

In a general aspect, an apparatus can include an insulated-gate bipolar transistor device (IGBT), a gate driver circuit (driver) coupled with a gate terminal of the IGBT and a low-resistance switch device coupled between an emitter terminal of the IGBT and an electrical ground terminal, the low-resistance switch device being coupled with the electrical ground terminal via a resistor. The apparatus can also include a current sensing circuit coupled with the driver and a current sense signal line coupled with the current sensing circuit and a current sense node, the current sense node being disposed between the low-resistance switch device and the resistor. The apparatus can further include a control circuit configured, when the driver is off, to detect, based on a voltage on the current sense node, when a current through the resistor is above a threshold value and disable the IGBT in response to the detection.

First claim

What is claimed is:

1. An apparatus, comprising:
an insulated-gate bipolar transistor (IGBT) device;
a gate driver circuit having an input terminal and an output terminal, the input terminal being configured to receive, from an engine control module, a spark control signal, the output terminal being coupled with a gate terminal of the IGBT device, the gate driver circuit being configured to produce, at the output terminal, an ignition coil output signal triggering a spark in an engine in response to the spark control signal;
an IGBT disabling component including a switch device, the switch device being directly coupled to the IGBT device; and
a feedback circuit directly coupled with at least one of the gate driver circuit or the IGBT disabling component, the feedback circuit being configured to control the IGBT disabling component, the feedback circuit being further configured to identify failure of the IGBT device and, in response, produce a disable signal,
the IGBT disabling component configured to disable the IGBT device in response to the disable signal.

2. The apparatus of claim 1 , wherein:
the IGBT disabling component includes a low-resistance switch device coupled between an emitter terminal of the IGBT device and an electrical ground terminal, the low-resistance switch device being coupled with the electrical ground terminal via a resistor; and
the feedback circuit includes:
a current sensing circuit coupled with the gate driver circuit;
a current sense signal line coupled with the current sensing circuit and a current sense node, the current sense node being disposed between the low-resistance switch device and the resistor; and
a control circuit configured, when the gate driver circuit is off, to:
detect, based on a voltage on the current sense node, when a current through the resistor is above a threshold value; and
provide the disable signal to disable the IGBT device in response to the current through the resistor being above the threshold value.

3. The apparatus of claim 2 , wherein the threshold value is a first threshold value, the current sensing circuit being further configured, when the gate driver circuit is on, to:
detect, based on the voltage on the current sense node, when the current through the resistor is above a second threshold value; and
disable the IGBT device in response to the current through the resistor being above the second threshold value.

4. The apparatus of claim 2 , wherein disabling the IGBT device includes latching a disable signal, the disable signal causing the low-resistance switch to open.

5. The apparatus of claim 2 , wherein the resistor comprises a bond wire.

6. The apparatus of claim 2 , wherein the resistor comprises a precision resistor.

7. The apparatus of claim 2 , wherein the low-resistance switch is a metal-oxide semiconductor (MOS) transistor.

8. The apparatus of claim 1 , wherein:
the IGBT disabling component includes a low-resistance switch device coupled between a gate terminal of the IGBT device and an electrical ground terminal; and
disabling the IGBT device includes latching a disable signal, the disable signal causing the gate terminal of the IGBT device to be coupled to the electrical ground terminal.

9. The apparatus of claim 1 , wherein disabling the IGBT device includes latching a disable signal, the disable signal causing an input signal of the gate driver circuit to be coupled to an electrical ground terminal.

10. The apparatus of claim 1 , wherein disabling the IGBT device includes latching a disable signal, the disable signal causing an output signal of the gate driver circuit to be coupled to an electrical ground terminal.

11. The apparatus of claim 1 , wherein disabling the IGBT device includes latching a disable signal, the disable signal causing the gate driver circuit to be decoupled from the gate terminal of the IGBT device.

12. The apparatus of claim 1 , wherein:
the IGBT disabling component includes a low-resistance switch device having a first terminal coupled with an emitter terminal of the IGBT device and a second terminal coupled with an electrical ground terminal; and
the feedback circuit includes:
a leakage detection circuit coupled with the emitter terminal of the IGBT device and the first terminal of the low-resistance switch device, the leakage detection circuit being configured, when the IGBT device is off and the low-resistance switch device is open, to:
detect a first leakage current in the IGBT device; and
detect a second leakage current in the low-resistance switch; and

a control circuit that, when the first leakage current is above a first threshold value, or when the second leakage current is above a second threshold value, is configured to perform at least one of:
providing the disable signal to disable the IGBT device; and
disabling the low-resistance switch.

13. The apparatus of claim 12 , wherein disabling the IGBT device includes latching a disable signal, the disable signal causing the gate terminal of the IGBT device to be coupled to the electrical ground terminal.

14. The apparatus of claim 12 , wherein disabling the IGBT device includes latching a disable signal, the disable signal causing an input signal of the gate driver circuit to be coupled to the electrical ground terminal.

15. The apparatus of claim 12 , wherein disabling the IGBT device includes latching a disable signal, the disable signal causing an output signal of the gate driver circuit to be coupled to the electrical ground terminal.

16. The apparatus of claim 12 , wherein disabling the IGBT device includes latching a disable signal, the disable signal causing the gate driver circuit to be decoupled from the gate terminal of the IGBT device.

17. The apparatus of claim 12 , wherein disabling the IGBT device includes latching a disable signal, the disable signal causing the low-resistance switch to open.

18. The apparatus of claim 12 , wherein the low-resistance switch includes an n-type double-diffused metal-oxide-semiconductor (NDMOS) transistor.

19. The apparatus of claim 1 , wherein the IGBT disabling component is configured to couple a gate terminal of the IGBT device with electrical ground.

20. The apparatus of claim 1 , wherein the IGBT disabling component is configured to open a current path between an emitter terminal of the IGBT device and electrical ground.

21. The apparatus of claim 1 , wherein the feedback circuit includes a leakage detection circuit.

22. The apparatus of claim 1 , wherein the feedback circuit includes a current sensing circuit.

Assignees

• Fairchild Semiconductor

Inventors

• Gillberg James E
• Pianka Juergen

Classifications

• F02P9/005

  by weakening or suppression of sparks to limit the engine speed · CPC title

• H01L27/0266

  Electricity · mapped topic

• F02P17/12 Primary

  Testing characteristics of the spark, ignition voltage or current (testing of sparking plugs H01T13/60) · CPC title

• H01L27/0288

  Electricity · mapped topic

• F02P3/0435

  with semiconductor devices (F02P3/0453, F02P3/051, F02P3/0552 take precedence) · CPC title