Semiconductor apparatus with transportable edge ring for substrate transport

Patent metadata

Field	Value
Publication number	US-9741600-B2
Application number	US-201615175820-A
Country	US
Kind code	B2
Filing date	Jun 7, 2016
Priority date	Mar 15, 2013
Publication date	Aug 22, 2017
Grant date	Aug 22, 2017

Abstract

An apparatus and method for processing semiconductor substrates provides a substrate stage being a rotatable disc with a solid surface and a terraced edge with upper, intermediate and lower portions of increasing diameter. A hollow edge ring rests on the intermediate edge portion and a substrate disposed on the rotatable disc is lifted and transported by robot blades positioned beneath the edge ring and which lift the edge ring which holds the substrate around its edges. The rotatable disc and edge ring find application in MOCVD and other semiconductor manufacturing tools.

First claim

What is claimed is:

1. A method for processing a semiconductor substrate, said method comprising:
providing a disc/edge ring assembly, said disc/edge ring assembly including a disc with a terraced peripheral edge including at least an upper edge portion with an upper outer diameter less than a lower outer diameter of a lower edge portion and an edge ring disposed over said lower edge portion and including an outer vertical portion circumferentially surrounding said disc/edge ring assembly;
disposing a substrate on said disc/edge ring assembly such that said substrate rests on at least an upper surface of said disc, said substrate including a diameter greater than said upper outer diameter;
inserting robot blades beneath said edge ring; and
lifting said edge ring while keeping peripheral edges of said substrate resting on a horizontal surface of said edge ring thereby causing said substrate to be lifted from said disc/edge ring assembly.

2. The method as in claim 1 , wherein said providing a disc/edge ring assembly comprises providing said disc/edge ring assembly in a recess portion of a MOCVD (metal organic chemical vapor deposition) apparatus.

3. The method as in claim 1 , wherein said disc is a rotatable disc.

4. The method as in claim 3 , further comprising rotating said disc while depositing a film on said substrate.

5. The method as in claim 4 , further comprising delivering processing gases to an underside of said rotating disc during said rotating and depositing.

6. The method as in claim 4 , wherein said substrate contacts said disc while said disc is rotating.

7. The method as in claim 1 , further comprising said robot blades transporting said edge ring with said peripheral edges of said substrate resting on a horizontal surface thereof, to a load station.

8. A method for processing a semiconductor substrate, said method comprising:
providing a rotatable disc having an upper surface capable of receiving a semiconductor substrate thereon and having a terraced outer edge including an upper edge portion, an intermediate edge portion and a lower edge portion, said intermediate edge portion having an intermediate outer diameter greater than an upper outer diameter of said upper edge portion;
providing an edge ring on a top surface of said intermediate edge portion, said edge ring including a horizontal surface substantially coplanar with a top surface of said rotatable disc and a vertical portion circumferentially outside said horizontal surface, wherein said upper surface of said rotatable disc and said horizontal surface of said edge ring are shaped and sized to receive a substrate thereon;
positioning said substrate on said disc and edge ring such that said substrate rests on at least an upper surface of said disc, said substrate including a diameter greater than said upper outer diameter;
inserting robot blades beneath said edge ring; and
lifting said edge ring while keeping peripheral edges of said substrate resting on said horizontal surface of said edge ring thereby causing said substrate to be lifted from said rotatable disc.

9. The method as in claim 8 , wherein said inserting at least one robot blade comprises inserting a plurality of robot blades.

10. The method as in claim 8 , further comprising rotating said disc.

11. The method as in claim 10 , wherein said substrate contacts said disc while said disc is rotating.

12. The method as in claim 8 , wherein said upper surface has an outer diameter smaller than said substrate.

13. The method as in claim 8 , wherein the intermediate outer diameter is less than a lower outer diameter of said lower edge portion.

14. A method for processing a semiconductor substrate, said method comprising:
providing a rotatable disc having an upper surface capable of receiving a semiconductor substrate thereon and having a terraced outer edge including an upper edge portion, an intermediate edge portion and a lower edge portion, said intermediate edge portion having an intermediate outer diameter greater than an upper outer diameter of said upper edge portion and less than a lower outer diameter of said lower edge portion;
providing an edge ring on a top surface of said intermediate edge portion, said edge ring including a horizontal surface substantially coplanar with a top surface of said rotatable disc, wherein said upper surface of said rotatable disc and said horizontal surface of said edge ring are shaped and sized to receive a substrate thereon, and said upper surface has an outer diameter smaller than said substrate;
positioning said substrate on said disc and edge ring such that said substrate rests on at least an upper surface of said disc, said substrate including a diameter greater than said upper outer diameter;
rotating said disc while depositing a film on said substrate;
inserting robot blades beneath said edge ring; and
lifting said edge ring while keeping peripheral edges of said substrate resting on said horizontal surface of said edge ring thereby causing said substrate to be lifted from said rotatable disc.

15. The method as in claim 14 , wherein said substrate contacts said disc while said disc is rotating.

16. The method as in claim 14 , wherein said edge ring further includes a vertical portion circumferentially outside said horizontal surface.

17. The method as in claim 14 , wherein said inserting at least one robot blade comprises inserting a plurality of robot blades.

18. The method as in claim 17 , further comprising delivering processing gases to an underside of said rotating disc during said rotating and depositing.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Hsieh Chih-Chang
• Hsu Chung-Chieh
• Chan Chian-Kun
• Chang Chih-Kuo
• Chen Chih-Ping
• Liu Hsu-Shui
• Lo Kai
• Hsiao Wei-Ting
• Lin Yung-Kai

Classifications

• H10P72/7618

  characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel · CPC title

• H10P72/7612

  characterised by lifting arrangements, e.g. lift pins · CPC title

• H10P72/7611

  characterised by edge profile or support profile · CPC title

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• H10P72/7602 Primary

  the wafers being placed on a robot blade or gripped by a gripper for conveyance · CPC title