Hybrid stair-step etch

Patent metadata

Field	Value
Publication number	US-9741563-B2
Application number	US-201615008328-A
Country	US
Kind code	B2
Filing date	Jan 27, 2016
Priority date	Jan 27, 2016
Publication date	Aug 22, 2017
Grant date	Aug 22, 2017

Abstract

A method for forming a stair-step structure in a substrate is provided, wherein the substrate has an organic mask, comprising at least one cycle, wherein each cycle comprises a) depositing a hardmask over the organic mask, b) trimming the organic mask, c) etching the substrate, d) trimming the organic mask, wherein there is no depositing a hardmask between etching the substrate and trimming the organic mask, e) etching the substrate, and f) repeating steps a-e a plurality of times forming the stair-step structure.

First claim

What is claimed is:

1. A method for forming a stair-step structure in a substrate in a plasma processing chamber, wherein the substrate has an organic mask, comprising at least one cycle, wherein each cycle comprises:
a) depositing a hardmask over the organic mask;
b) trimming the organic mask;
c) etching the substrate;
d) trimming the organic mask, wherein there is no depositing a hardmask between etching the substrate and trimming the organic mask; and
e) etching the substrate.

2. The method, as recited in claim 1 , further comprising repeating steps a-e a plurality of times forming the stair-step structure.

3. The method, as recited in claim 2 , wherein steps d and e are cyclically repeated at least once for each cycle of steps a-e.

4. The method, as recited in claim 3 , wherein each cycle of steps a-e is repeated at least 5 times.

5. The method, as recited in claim 4 , wherein the depositing the hardmask deposits hardmask on sidewalls of the organic mask further comprising trimming the hardmask between steps a and b.

6. The method, as recited in claim 5 , wherein the organic mask is a photoresist mask.

7. The method, as recited in claim 6 , wherein steps a-e are performed in a single plasma processing chamber.

8. The method, as recited in claim 7 , wherein the substrate comprises a plurality of layers, wherein each layer comprises at least two sublayers.

9. The method, as recited in claim 8 , wherein at least one of the at least two sublayers is a silicon oxide containing layer.

10. The method, as recited in claim 1 , wherein the depositing the hardmask deposits a top layer on top of the organic mask and a sidewall on the side of the organic mask and wherein the top layer of the hardmask has a thickness that is thicker than a thickness of the sidewall of the hardmask and further comprising trimming the hardmask between steps a and b.

11. The method, as recited in claim 1 , wherein step d smoothes the organic mask.

12. The method, as recited in claim 1 , wherein step c completely removes the hardmask, and wherein steps d and e are performed without a hardmask, and wherein step d partially etches the organic mask.

13. A method for making a three dimensional memory structure from a memory stack comprising a plurality of layers, wherein each layer comprises at least two sublayers and wherein an organic mask is over the memory stack, comprising:
a) depositing a hardmask over a top of the organic mask;
b) trimming the organic mask;
c) etching the memory stack, so that portions of the memory stack not covered by the organic mask are etched a depth of the thickness of at least one layer of the plurality of layers;
d) trimming the organic mask, wherein there is no depositing a hardmask between steps c and d;
e) etching the memory stack; and
f) repeating steps a-e a plurality of times forming the three dimensional memory structure.

14. The method, as recited in claim 13 , further comprising cyclically repeating steps d and e at least once before performing step f.

15. The method, as recited in claim 13 , wherein the depositing the hardmask deposits a sidewall layer on a sidewall of the organic mask, further comprising removing the sidewall layer of the hardmask.

16. The method, as recited in claim 15 , wherein a thickness of the top layer of the hardmask is greater than a thickness of the sidewall layer of the hardmask.

17. The method, as recited in claim 16 , wherein the organic mask is a photoresist mask.

18. The method, as recited in claim 17 , wherein steps a-f are performed in a single plasma processing chamber.

Assignees

• Lam Res Corp

Inventors

• Xiang Hua
• Bae Indeog
• Jung Sung Jin
• Qin Ce
• Fu Qian
• Yamaguchi Yoko

Classifications

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title