Method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-9741554-B2
Application number	US-201615372181-A
Country	US
Kind code	B2
Filing date	Dec 7, 2016
Priority date	Dec 11, 2015
Publication date	Aug 22, 2017
Grant date	Aug 22, 2017

Abstract

A method of manufacturing a semiconductor device includes a semiconductor region forming process, a cleaning process, a surface roughness uniformizing process, and an electrode forming process. As the semiconductor region forming process, semiconductor regions are formed such that a plurality of semiconductor regions with different ion injection amounts are exposed on one principal surface of a semiconductor substrate. As the cleaning process, after the semiconductor region forming process, a cleaning using hydrofluoric acid is performed on the one principal surface of the semiconductor substrate. As the surface roughness uniformizing process, after the cleaning process, the surface roughness of the one principal surface of the semiconductor substrate is uniformized. As the electrode forming process, after the surface roughness uniformizing process, electrodes are formed on the one principal surface of the semiconductor substrate.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, the method comprising:
forming semiconductor regions such that a plurality of semiconductor regions with different ion injection amounts are exposed on one principal surface of a semiconductor substrate, as a semiconductor region forming process;
after the semiconductor region forming process, performing a cleaning using hydrofluoric acid on the one principal surface of the semiconductor substrate, as a cleaning process;
after the cleaning process, uniformizing the surface roughness of the one principal surface of the semiconductor substrate, as a surface roughness uniformizing process; and
after the surface roughness uniformizing process, forming electrodes on the one principal surface of the semiconductor substrate, as an electrode forming process.

2. The method of manufacturing a semiconductor device according to claim 1 ,
wherein, in the surface roughness uniformizing process, the one principal surface of the semiconductor substrate is cleaned by a cleaning using a mixture of ammonia and a hydrogen peroxide solution.

3. The method of manufacturing a semiconductor device according to claim 2 ,
wherein, in the electrode forming process, the electrodes are formed using a sputtering method.

4. The method of manufacturing a semiconductor device according to claim 2 ,
wherein, in the electrode forming process, the electrodes are formed using a vapor deposition method.

5. The method of manufacturing a semiconductor device according to claim 3 ,
wherein, in the electrode forming process, the electrodes are formed using the sputtering method while heating the semiconductor substrate.

6. The method of manufacturing a semiconductor device according to claim 5 ,
wherein, in the electrode forming process, the electrodes are formed using the sputtering method while heating the semiconductor substrate to equal to or higher than 50° C. and equal to or lower than 450° C.

Assignees

• Toyota Motor Co Ltd

Inventors

• Kameyama Satoru
• Ajioka Masaki
• Oki Shuhei

Classifications

• H10P70/56

  Cleaning of wafer backside · CPC title

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10P70/27 Primary

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10D64/011

  of electrodes ohmically coupled to a semiconductor · CPC title

• H10P70/20

  Cleaning during device manufacture · CPC title