Optical modulator having reflection layers

Patent metadata

Field	Value
Publication number	US-9740032-B2
Application number	US-201615050911-A
Country	US
Kind code	B2
Filing date	Feb 23, 2016
Priority date	Aug 28, 2015
Publication date	Aug 22, 2017
Grant date	Aug 22, 2017

Abstract

An optical modulator is provided, including a lower reflection layer, an active layer formed on the lower reflection layer, and an upper reflection layer formed on the active layer. The active layer includes a multiple quantum well structure including a quantum well layer and a quantum barrier layer. The upper reflection layer includes a dielectric material. A plurality of micro cavity layers are included in the upper reflection layer.

First claim

What is claimed is:

1. An optical modulator comprising:
a lower reflection layer;
an active layer disposed on the lower reflection layer, the active layer comprising a quantum well layer and a quantum barrier layer;
an upper reflection layer disposed on the active layer, the upper reflection layer comprising a dielectric material; and
a plurality of micro cavity layers disposed in the upper reflection layer.

2. The optical modulator of claim 1 , wherein the upper reflection layer comprises a distributed Bragg reflection (DBR) layer.

3. The optical modulator of claim 2 , wherein the upper reflection layer comprises a DBR layer comprising a plurality of layers having optical thicknesses configured to cause constructive interference with respect to light having a wavelength within a range of 780 nm to 1650 nm.

4. The optical modulator of claim 3 , wherein at least one of the plurality of micro cavity layers has an optical thickness of λ/2, where λ is a resonant wavelength of the optical modulator.

5. The optical modulator of claim 1 , wherein the upper reflection layer comprises at least one pair of a first dielectric material layer having a first refractive index and a second dielectric material layer having a second refractive index different from the first refractive index.

6. The optical modulator of claim 5 , wherein the upper reflection layer comprises a repeating stack of pairs of the first dielectric material layer and the second dielectric material layer.

7. The optical modulator of claim 5 , wherein the upper reflection layer comprises a first upper reflection layer, a second upper reflection layer, and a third upper reflection layer that are sequentially stacked, and the optical modulator further comprises:
a first micro cavity layer between the first upper reflection layer and the second upper reflection layer; and
a second micro cavity layer between the second upper reflection layer and the third upper reflection layer.

8. The optical modulator of claim 7 , wherein at least one of the first upper reflection layer, the second upper reflection layer, and the third upper reflection layer comprises at least one pair of the first dielectric material layer and the second dielectric material layer.

9. The optical modulator of claim 5 , wherein the first dielectric material layer and the second dielectric material layer each comprise at least one material selected from a group consisting of SiO 2 , SiNx, indium tin oxide (ITO), indium zinc oxide (IZO), AZO, Si, amorphous silicon (a-Si), Al 2 O 3 , AlN, HfO 2 , SiC, MgO, and MgF 2 , and wherein a refractive index of the first dielectric material layer is different from a refractive index of the second dielectric material layer.

10. The optical modulator of claim 1 , wherein the upper reflection layer comprises a first upper reflection layer, a second upper reflection layer, and a third upper reflection layer that are sequentially stacked, and the optical modulator further comprises:
a first micro cavity layer between the first upper reflection layer and the second upper reflection layer; and
a second micro cavity layer between the second upper reflection layer and the third upper reflection layer.

11. The optical modulator of claim 10 , wherein at least one of the first upper reflection layer, the second upper reflection layer, and the third upper reflection layer comprises at least one pair of the first dielectric material layer having a first refractive index and the second dielectric material layer having a second refractive index different from the first refractive index.

12. The optical modulator of claim 11 , wherein the first dielectric material layer and the second dielectric material layer each comprise at least one material selected from a group consisting of SiO 2 , SiNx, indium tin oxide (ITO), indium zinc oxide (IZO), AZO, Si, amorphous silicon (a-Si), Al 2 O 3 , AlN, HfO 2 , SiC, MgO, and MgF 2 , and wherein a refractive index of the first dielectric material layer is different from a refractive index of the second dielectric material layer.

13. The optical modulator of claim 1 , wherein the lower reflection layer and the active layer each comprise a crystal growth layer that are formed through crystal growth by disposing a group III-V compound semiconductor on the substrate, and the upper reflection layer is formed by depositing a dielectric material on the crystal growth layer.

14. The optical modulator of claim 13 , further comprising one of a metal pattern and a transparent electrode disposed on the active layer,
wherein the upper reflection layer is formed after forming the one of the metal pattern and the transparent electrode.

15. The optical modulator of claim 13 , further comprising an anti-reflection coating layer on a bottom surface of the substrate.

16. The optical modulator of claim 1 , wherein the lower reflection layer and the active layer each comprise a crystal growth layer formed of a group III-V compound semiconductor on the substrate, the upper reflection layer is formed separately by using a dielectric material, and the upper reflection layer is coupled to the crystal growth layer.

17. The optical modulator of claim 16 , further comprising one of a metal pattern and a transparent electrode disposed on the active layer,
wherein the upper reflection layer is coupled to the crystal growth layer on which the one of the metal pattern and the transparent electrode is formed.

18. The optical modulator of claim 16 , further comprising an anti-reflection coating layer on a bottom surface of the substrate.

19. The optical modulator of claim 1 , wherein the substrate comprises GaAs.

20. An optical modulator comprising:
a lower reflection layer;
an active layer disposed on the lower reflection layer; and
an upper reflection layer disposed on the active layer, wherein the upper reflection layer comprises a dielectric material and has a thickness of not greater than 2.7 μm, and wherein the upper reflection layer comprises a plurality of microcavity layers disposed therewithin.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Park Changyoung
• Na Byunghoon
• Park Yonghwa

Classifications

• G02F2201/38

  Anti-reflection arrangements · CPC title

• H01S5/06256

  with DBR-structure · CPC title

• G02F2202/101

  Ga×As and alloy · CPC title

• G02F2201/346

  distributed (Bragg) reflector · CPC title

• H01S5/1021

  Coupled cavities (H01S5/14 takes precedence) · CPC title