Optical device including three coupled quantum well structure

Patent metadata

Field	Value
Publication number	US-9082909-B2
Application number	US-201414148009-A
Country	US
Kind code	B2
Filing date	Jan 6, 2014
Priority date	Jan 4, 2013
Publication date	Jul 14, 2015
Grant date	Jul 14, 2015

Abstract

Provided is an optical device which includes an active layer which includes at least two outer barriers and at least one coupled quantum well, each of the at least one coupled quantum well is sandwiched between the at least two outer barriers. Each of the at least one coupled quantum well includes at least three quantum well layers and at least two coupling barriers interposed between the at least three quantum layers. The at least two coupling barriers have a potential energy which is higher than a ground level and is lower than energy levels of the at least two outer barriers.

First claim

What is claimed is:

1. An optical device comprising:
an active layer which comprises at least two outer barriers and at least one coupled quantum well, each of the at least one coupled quantum well is sandwiched between the at least two outer barriers,
wherein each of the at least one coupled quantum well comprises at least three quantum well layers and at least two coupling barriers interposed between the at least three quantum well layers,
wherein the at least two coupling barriers have a potential energy which is higher than a ground level and is lower than energy levels of the at least two outer barriers, and
wherein the at least two coupling barriers have a material thickness such that tunneling of electrons and holes occurs.

2. The optical device of claim 1 , wherein each coupled quantum well is a three coupled quantum well which comprises a first quantum well layer, a first coupling barrier, a second quantum well layer, a second coupling barrier, and a third quantum well layer, and
wherein the first coupling barrier and the second coupling barrier have the potential energy which is higher than the ground level and is lower than the energy levels of the at least two outer barriers.

3. The optical device of claim 2 , wherein the second quantum well layer has a higher material thickness than the first quantum well layer, and the first quantum well layer has a higher material thickness than the third quantum well layer.

4. The optical device of claim 1 , wherein in a wavelength band of 850 nm, the at least three quantum well layers comprise gallium arsenide (GaAs), the at least two coupling barriers comprise aluminum gallium arsenide (Al y Ga 1-y As) (0<y<1), and the at least two outer barriers comprise Al x Ga 1-x As (0<y<x<=1).

5. The optical device of claim 1 , wherein in a band of a wavelength of 1550 nm, the at least three quantum well layers comprise at least one of indium gallium arsenide (In x Ga 1-x As), indium gallium aluminum arsenide (In 1-x-y Ga x Al y As), and indium gallium arsenic phosphate (In 1-x Ga x As z P 1-z ), and the at least two coupling barriers and the at least two outer barriers comprise at least one of In 1-x-y Ga x Al y As and In 1-x Ga x As z P 1-z (0<x, y, z<1).

6. The optical device of claim 1 , further comprising n-contact layers and p-contact layers which are disposed on a lower surface and an upper surface of the active layer, respectively.

7. The optical device of claim 1 , further comprising a lower reflective layer and an upper reflective layer which are disposed on a lower surface and an upper surface of the active layer, respectively.

8. The optical device of claim 7 , wherein the optical device is a reflective optical modulator, and the lower reflective layer has a reflectivity which is higher than the upper reflective layer.

9. The optical device of claim 7 , wherein the optical device is a transmissive optical modulator, and the lower reflective layer has a reflectivity which is equal to the upper reflective layer.

10. The optical device of claim 7 , wherein at least one of the lower reflective layer and the upper reflective layer further comprises at least one micro cavity layer, and when λ is a resonant wavelength of the optical device, each of the active layer and the at least one micro cavity layer has an optical thickness which is an integer multiple of λ/2.

11. The optical device of claim 10 , wherein each of the upper reflective layer and the lower reflective layer is a distributed Bragg reflector (DBR) layer which comprises a repeated stack of alternating first and second refractive index layers having an optical thickness of λ/4 and different refractive indices.

12. The optical device of claim 11 , wherein the micro cavity layer is made of a same material as one of the alternating first and second refractive index layers.

13. The optical device of claim 7 , wherein the active layer comprises a first active layer on the lower reflective layer and a second active layer on the first active layer,
wherein the first active layer comprises a first quantum well layer, a first coupling barrier, a second quantum well layer, a second coupling barrier, and a third quantum well layer,
wherein the second active layer comprises a fourth quantum well layer, a third coupling barrier, a fifth quantum well layer, a fourth coupling barrier, and a sixth quantum well layer, and
wherein the second quantum well layer in the first active layer has a different material thickness than the fifth quantum well layer in the second active layer.

14. The optical device of claim 13 , wherein the second quantum well layer has a higher material thickness than the first quantum well layer, the first quantum well layer has a higher material thickness than the third quantum well layer, the fifth quantum well layer has a higher material thickness than the fourth quantum well layer, and the fourth quantum well layer has a higher material thickness than the sixth quantum well layer.

15. The optical device of claim 13 , wherein the first quantum well layer and the third quantum well layer in the first active layer have material thicknesses equal to the fourth quantum well layer and the sixth quantum well layer in the second active layer, respectively.

16. The optical device of claim 7 , wherein the active layer comprises a first active layer having at least one three coupled quantum well structure, each of at least one three coupled quantum well structure comprises a first quantum well layer, a first coupling barrier, a second quantum well layer, a second coupling barrier, and a third quantum well layer, and a second active layer having at least one single quantum well structure, each of at least one single quantum well structure comprises a single fourth quantum well layer interposed between the at least two outer barriers.

17. An optical device comprising:
a lower reflective layer;
a first active layer on the lower reflective layer;
a middle reflective layer on the first active layer;
a second active layer on the middle reflective layer; and
an upper reflective layer on the second active layer,
wherein at least one of the first active layer and the second active layer comprises at least two outer barriers and at least one coupled quantum well, each of the at least one coupled quantum well is sandwiched between the at least two outer barriers,
wherein each of the at least one coupled quantum well comprises at least three quantum well layers and at least two coupling barriers which are interposed between the at least three quantum well layers,
wherein the at least two coupling barriers have a potential energy which is higher than a ground level and is lower than energy levels of the at least two outer barriers, and
wherein the at least two coupling barriers have a material thickness such that tunneling of electrons and holes occurs.

18. The optical device of claim 17 , wherein each coupled quantum well in the first active layer comprises a first quantum well layer, a first coupling barrier, a second quantum well layer, a second coupling barrier, and a third quantum well layer, and
wherein each coupled quantum well in the second active layer comprises a fourth quantum well layer, a third coupling barrier, a fifth quantum well layer, a fourth coupling barrier, and a sixth quantum well layer.

19. The optical device of claim 18 , wherein the second quantum well layer has a higher material thickness than the first quantum well layer, the first quantum well layer has a higher material thickness than the third quantu

Assignees

• Samsung Electronics Co Ltd
• Kwangju Inst Sci & Tech

Inventors

• Cho Yong-Chul
• Lee Yong-Tak
• Park Chang-Young
• Na Byung-Hoon
• Park Yong-Hwa
• Ju Gun-Wu
• Chio Hee-Ju

Classifications

• G02F2202/101

  Ga×As and alloy · CPC title

• G02F1/01725 Primary

  Non-rectangular quantum well structures, e.g. graded or stepped quantum wells · CPC title

• A61G1/044 Primary

  Straps, bands or belts · CPC title

• A61G2203/70

  with special adaptations, e.g. for safety or comfort · CPC title

• H10F77/143 Primary

  comprising quantum structures · CPC title