Composition for pattern formation, pattern-forming method, and block copolymer

Patent metadata

Field	Value
Publication number	US-9738746-B2
Application number	US-201615074053-A
Country	US
Kind code	B2
Filing date	Mar 18, 2016
Priority date	Mar 30, 2015
Publication date	Aug 22, 2017
Grant date	Aug 22, 2017

Abstract

A pattern-forming method includes forming on one face side of a substrate, a directed self-assembling film, and removing a part of the directed self-assembling film. The directed self-assembling film is formed from a composition including a block copolymer and a solvent. The block copolymer includes a first block composed of a first repeating unit that includes a silicon atom, a second block composed of a second repeating unit that does not include a silicon atom, and a first group that bonds to at least one end of a main chain and links to the first block. The first group is a monovalent group that forms a compound having ClogP of no less than 2.4 provided that a methyl group is bonded to an atom on a side of the main chain. The first group does not comprise a hetero atom.

First claim

What is claimed is:

1. A composition for pattern formation comprising:
a block copolymer that forms a phase separation structure by directed self-assembly; and
a solvent,
wherein the block copolymer comprises a first block composed of a first repeating unit that comprises a silicon atom, a second block composed of a second repeating unit that does not include a silicon atom, and a first group that bonds to at least one end of a main chain and links to the first block,
wherein the first group is a monovalent group that forms a compound having ClogP of no less than 2.4 provided that a methyl group is bonded to an atom on a side of the main chain, and
wherein the first group does not comprise a hetero atom.

2. The composition for pattern formation according to claim 1 , wherein the first group is a monovalent hydrocarbon group having 3 to 25 carbon atoms.

3. The composition for pattern formation according to claim 1 , wherein the first group is an alkyl group, a cycloalkyl group, an aryl group, or an aralkyl group.

4. The composition for pattern formation according to claim 1 , wherein the first repeating unit is represented by the following formula (1):

wherein, in the formula (1),
R 1 represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group;
R 2 represents a single bond, —O—, —COO— or —CONH—; and
R a represents a monovalent group having 1 to 20 silicon atoms.

5. The composition for pattern formation according to claim 1 , wherein the second repeating unit is a (meth)acrylic acid ester unit, or a substituted or unsubstituted styrene unit.

6. The composition for pattern formation according to claim 1 , wherein the block copolymer is a diblock copolymer or a triblock copolymer.

7. The composition for pattern formation according to claim 1 , wherein the number of carbon atoms of the first group is at least 6.

8. A pattern-forming method comprising:
forming on one face side of a substrate, a directed self-assembling film in which phase separation is caused; and
removing a part of the directed self-assembling film,
wherein the directed self-assembling film is formed from a composition,
wherein the composition comprises:
a block copolymer that forms a phase separation structure by directed self-assembly; and
a solvent,

wherein the block copolymer comprises a first block composed of a first repeating unit that comprises a silicon atom, a second block composed of a second repeating unit that does not include a silicon atom, and a first group that bonds to at least one end of a main chain and links to the first block,
wherein the first group is a monovalent group that forms a compound having ClogP of no less than 2.4 provided that a methyl group is bonded to an atom on a side of the main chain, and
wherein the first group does not comprise a hetero atom.

9. The pattern-forming method according to claim 8 , further comprising before the forming the directed self-assembling film, forming an underlayer film on one face side of the substrate,
wherein in the forming the directed self-assembling film, the directed self-assembling film is formed on a side of the underlayer film not facing the substrate.

10. The pattern-forming method according to claim 8 , further comprising before the forming the directed self-assembling film,
forming a prepattern on one face side of the substrate,
wherein in the forming the directed self-assembling film, the directed self-assembling film is formed in a region where the prepattern is not provided.

11. The pattern-forming method according to claim 8 , wherein a line-and-space pattern or a hole pattern is formed.

12. The pattern-forming method according to claim 8 , wherein the first group is a monovalent chain hydrocarbon group having 3 to 25 carbon atoms, a monovalent alicyclic hydrocarbon group having 3 to 25 carbon atoms, or a monovalent aromatic hydrocarbon group having 6 to 25 carbon atoms.

13. The pattern-forming method according to claim 8 , wherein the first group is a monovalent hydrocarbon group having 3 to 25 carbon atoms.

14. The pattern-forming method according to claim 8 , wherein the first group is an alkyl group, a cycloalkyl group, an aryl group, or an aralkyl group.

15. The pattern-forming method according to claim 8 , wherein the first repeating unit is represented by the following formula (1):

wherein, in the formula (1),
R 1 represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group;
R 2 represents a single bond, —O—, —COO— or —CONH—; and
R a represents a monovalent group having 1 to 20 silicon atoms.

16. The pattern-forming method according to claim 8 , wherein the second repeating unit is a (meth)acrylic acid ester unit, or a substituted or unsubstituted styrene unit.

17. The pattern-forming method according to claim 8 , wherein the block copolymer is a diblock copolymer or a triblock copolymer.

18. The pattern-forming method according to claim 8 , wherein the first group is a monovalent group that forms a compound having ClogP of no less than 5.5 provided that a methyl group is bonded to an atom on the side of the main chain.

19. The pattern-forming method according to claim 8 , wherein the first group is a monovalent group that forms a compound having ClogP of no greater than 7 provided that a methyl group is bonded to an atom on the side of the main chain.

20. A block copolymer that forms a phase separation structure by directed self-assembly, comprising:
a first block composed of a first repeating unit that includes a silicon atom; a second block composed of a second repeating unit that does not include a silicon atom; and a first group that bonds to at least one end of a main chain and links to the first block,
wherein the first group is a monovalent group that forms a compound having ClogP of no less than 2.4 provided that a methyl group is bonded to an atom on a side of the main chain, and
wherein the first group does not comprise a hetero group.

Assignees

• Jsr Corp

Inventors

• Komatsu Hiroyuki
• Naruoka Takehiko
• Nagai Tomoki

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H10P14/68

  Organic materials, e.g. photoresists · CPC title

• C09D183/00

  Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers · CPC title