Method of producing structure containing phase-separated structure, method of forming pattern and method of forming fine pattern

Patent metadata

Field	Value
Publication number	US-9442371-B2
Application number	US-201514603106-A
Country	US
Kind code	B2
Filing date	Jan 22, 2015
Priority date	Jan 23, 2014
Publication date	Sep 13, 2016
Grant date	Sep 13, 2016

Abstract

A method of producing a structure containing a phase-separated structure, including a step in which a layer including an Si-containing block copolymer having a plurality of blocks bonded is formed between guide patterns on a substrate; a step in which a solution of a top coat material is applied to the layer and the guide patterns so as to form a top coat film; and a step in which the layer including the Si-containing block copolymer and having the top coat film formed thereon is subjected to annealing treatment so as to conduct a phase separation of the layer; in which a solvent of the solution of the top coat material contains no basic substance.

First claim

What is claimed is:

1. A method of producing a structure containing guide patterns and a phase-separated structure on a substrate, comprising:
forming the guide patterns on the substrate, wherein the guide patterns are formed of a resin susceptible to degradation by a base;
forming a layer including an Si-containing block copolymer having a plurality of blocks bonded between the guide patterns on the substrate;
applying a solution of a top coat material to the layer and the guide patterns to form a top coat film; and
subjecting the layer including the Si-containing block copolymer and having the top coat film formed thereon to an annealing treatment to conduct a phase separation of the layer, wherein
a solvent of the solution of the top coat material contains no basic substance.

2. The method according to claim 1 , wherein the Si-containing block copolymer contains a trimethylsilyl group.

3. The method according to claim 1 , wherein the Si-containing block copolymer comprises a Si-containing block selected from the group consisting of a block of a structural unit represented by general formula (a00-1) or (a00-2) shown below, a block of a structural unit of a siloxane or a derivative thereof and a block of a structural unit containing a polyhedral oligomeric silsesquioxane;

wherein La 1 represents a single bond or a divalent linking group which may have a hetero atom; R 1 , R 2 and R 3 each independently represents a hydrogen atom or an alkyl group of 1 to 5 carbon atoms; R represents an hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; and Ya 1 represents a single bond or a divalent linking group.

4. The method according to claim 3 , wherein the structural unit represented by general formula (a00-1) or (a00-2) is any one of the structural units shown below:

5. The method according to claim 3 , wherein the Si-containing block copolymer further comprises a block of a structural unit having an aromatic group.

6. The method according to claim 5 , wherein the structural unit having an aromatic group is a structural unit derived from a styrene or a derivative thereof.

7. The method according to claim 5 , wherein the molar ratio of the structural unit having an aromatic group and a structural unit containing an Si atom constituting the Si-containing block is 60:40 to 90:10.

8. The method according to claim 1 , further comprising forming a neutralization film on the substrate.

9. The method according to claim 8 , wherein the neutralization film contains no cross-linking polymer unit.

10. The method according to claim 1 , further comprising forming the guide patterns using a resist composition.

11. The method according to claim 1 , wherein the guide patterns are trench-guide patterns.

12. The method according to claim 1 , wherein the solvent is water or a mixed solvent of water and methanol.

13. The method according to claim 1 , wherein a pH value of the solution of the top coat material is 7 or less.

14. A method of forming a pattern, comprising:
producing a structure according to the method of claim 1 ; and
selectively removing a phase comprising at least one block from the structure containing the phase-separated structure to form a pattern.

15. A method of forming a fine pattern, comprising:
forming a pattern according to the method of claim 14 ; and
subjecting a substrate to an etching treatment using the pattern as a mask.

16. The method according to claim 1 , wherein forming the guide patterns on the substrate comprises:
forming a photosensitive resin film on the substrate;
selectively exposing the photosensitive resin film to form exposed portions and unexposed portions of the photosensitive resin film; and
dissolving either the exposed portions or the unexposed portions of the photosensitive resin film in a developing solution such that the undissolved portions of the photosensitive resin film form the guide patterns on the substrate.

17. The method according to claim 1 , wherein forming the guide patterns on the substrate comprises:
forming a resin layer on the substrate; and
transferring a mold pattern of a mold to the resin layer on the substrate.

Assignees

• Tokyo Ohka Kogyo Co Ltd

Inventors

• Seshimo Takehiro
• Maehashi Takaya
• Dazai Takahiro
• Utsumi Yoshiyuki
• Matsumiya Tasuku
• Miyagi Ken
• Shiono Daiju
• Kurosawa Tsuyoshi

Classifications

• C08G18/61

  Polysiloxanes · CPC title

• G03F7/0752

  in non photosensitive layers or as additives, e.g. for dry lithography · CPC title

• G03F7/11

  having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title

• C09D153/00

  Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers · CPC title

• G03F7/0002 Primary

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title