Mold for forming complex 3D MEMS components

Patent metadata

Field	Value
Publication number	US-9738517-B2
Application number	US-201514839324-A
Country	US
Kind code	B2
Filing date	Aug 28, 2015
Priority date	Feb 27, 2013
Publication date	Aug 22, 2017
Grant date	Aug 22, 2017

Abstract

A mold structure having high-precision multi-dimensional components which includes a first oxide layer superimposed on a top of a first semiconductor substrate; a second oxide layer superimposed on a top of a second semiconductor substrate; integrated designs patterned in at least one of the oxide layers; and the first and second semiconductor substrates bonded to one another into a three dimensional (3D) mold such that the first oxide layer only makes partial contact with the second oxide layer such that a portion of the first oxide layer avoids contact with the second oxide layer, the portion of the first oxide layer directly opposite a surface portion of the second semiconductor substrate that is free of the second oxide, the 3D mold selectively filled with a filling material to form a molded high-precision multi-dimensional component.

First claim

What is claimed is:

1. A mold structure having high-precision multi-dimensional components comprising:
a plurality of semiconductor substrates;
a first oxide layer superimposed on a top of a first semiconductor substrate of said plurality of semiconductor substrates;
a second oxide layer superimposed on a top of a second semiconductor substrate of said plurality of semiconductor substrates;
integrated designs patterned in at least one of said oxide layers; and
said first and second semiconductor substrates bonded to one another by dielectric bonding into a three dimensional (3D) mold such that said first oxide layer only makes partial contact with said second oxide layer such that a portion of the first oxide layer avoids contact with the second oxide layer, the portion of the first oxide layer directly opposite a surface portion of the second semiconductor substrate, the surface portion of the second semiconductor substrate being free of said second oxide layer, said 3D mold selectively filled with a filling material to form a molded high-precision multi-dimensional component, the molded high-precision multi-dimensional component providing a precise replica of said 3D mold structure having multiple patterned layers.

2. The mold structure of claim 1 wherein said plurality of semiconductor substrates patterned with said integrated design is bonded together creating a mold material with varying 3D features.

3. The mold structure of claim 1 wherein said filling material comprises thermocompression molded bulk metallic glass.

4. The mold structure of claim 1 wherein overburden of bulk metallic glass is removed.

5. The mold structure of claim 1 further comprising said semiconductor substrates repositioned wherein said deposited oxide layers make contact with one another, and an oxide-oxide fusion bonding completed with said 3D mold structure containing multiple patterned layers.

6. The mold structure of claim 1 wherein each of said first oxide layer and said second oxide layer is a silane based oxide and said filling material comprises a bulk metal glass.

7. The mold structure of claim 1 wherein there is a gap between the portion of the first oxide layer and the surface portion of the second semiconductor substrate, the gap being filled with the filling material.

8. The mold structure of claim 1 wherein the 3D mold comprises a mold cavity and the surface portion of the second semiconductor substrates is within the mold cavity.

9. A mold structure having high-precision multi-dimensional components comprising:
a plurality of semiconductor substrates;
a first oxide layer superimposed on a top of a first semiconductor substrate of said plurality of semiconductor substrates;
a second oxide layer superimposed on a top of a second semiconductor substrate of said plurality of semiconductor substrates;
integrated designs patterned in at least one of said oxide layers; and
said first and second semiconductor substrates bonded to one another by dielectric bonding into a three dimensional (3D) mold such that said first oxide layer only makes partial contact with said second oxide layer such that a portion of the first oxide layer avoids contact with the second oxide layer, wherein there is a gap between the portion of the first oxide layer and the second semiconductor substrate, the gap being filled with the filling material, said 3D mold selectively filled with a filling material to form a molded high-precision multi-dimensional component, the molded high-precision multi-dimensional component providing a precise replica of said 3D mold structure having multiple patterned layers.

10. The mold structure of claim 9 wherein said plurality of semiconductor substrates patterned with said integrated design is bonded together creating a mold material with varying 3D features.

11. The mold structure of claim 9 wherein said filling material comprises thermocompression molded bulk metallic glass.

12. The mold structure of claim 9 wherein overburden of bulk metallic glass is removed.

13. The mold structure of claim 9 further comprising said semiconductor substrates repositioned wherein said deposited oxide layers make contact with one another, and an oxide-oxide fusion bonding completed with said 3D mold structure containing multiple patterned layers.

14. The mold structure of claim 9 wherein each of said first oxide layer and said second oxide layer is a silane based oxide and said filling material comprises a bulk metal glass.

15. The mold structure of claim 9 wherein the 3D mold comprises a mold cavity and the gap is within the mold cavity.

Assignees

• IBM
• Univ Yale

Inventors

• Kinser Emily R
• Schroers Jan
• Kumar Golden

Classifications

• B81C99/009 Primary

  Manufacturing the stamps or the moulds · CPC title

• B22C9/06

  Permanent moulds for shaped castings (moulds for ingots B22D7/06) · CPC title