Apparatus and methods for tunable filters

Patent metadata

Field	Value
Publication number	US-9735752-B2
Application number	US-201414559785-A
Country	US
Kind code	B2
Filing date	Dec 3, 2014
Priority date	Dec 3, 2014
Publication date	Aug 15, 2017
Grant date	Aug 15, 2017

Abstract

Apparatus and methods for tunable filters are provided. In certain configurations, a tunable filter includes a semiconductor die attached to a laminated substrate, such as a substrate of a multi-chip module (MCM). The tunable filter includes a vector inductor implemented using two or more conductors arranged on different conductive layers of the laminated substrate. The vector inductor's conductors are inductively coupled to one another and electrically connected in parallel to provide the vector inductor with high quality factor (Q-factor). The semiconductor die includes a variable capacitor that is electrically connected with the vector inductor to operate as a tunable resonator. Additionally, a frequency characteristic of the tunable filter, such as a passband, can be controlled by selecting a capacitance value of the variable capacitor, thereby tuning a resonance of the resonator.

First claim

What is claimed is:

1. A tunable filter comprising:
a laminated substrate comprising a first vector inductor, wherein the first vector inductor includes no more than a single stack of non-spiral conductors including three or more conductors arranged on different layers of the laminated substrate, wherein each of the different conductive layers is separated by a dielectric, wherein the each of the three or more conductors are electrically connected to one another along a first side of the stack, and wherein each of the three or more conductors are electrically connected to one another along a second side of the stack opposite the first side, wherein the three or more conductors are electrically connected to one another along the first and second sides of the stack such that the three or more conductors are electrically connected in parallel with one another; and
a semiconductor die attached to the laminated substrate, wherein the semiconductor die includes a first variable capacitor,
wherein the first variable capacitor and the first vector inductor are electrically connected to operate as a first tunable resonator.

2. The tunable filter of claim 1 , wherein adjacent conductors in the stack are mutually coupled to one another with a coupling coefficient of at least 0.9.

3. The tunable filter of claim 1 , wherein each of the conductors in the stack have substantially the same shape and are adjacent to each other.

4. A tunable filter comprising:
a laminated substrate comprising a first vector inductor, wherein the first vector inductor includes: a stack of conductors comprising two or more conductors arranged on different conductive layers of the laminated substrate, wherein each of the different conductive layers is separated by a dielectric, wherein the two or more conductors are electrically connected to one another along a first side of the stack, and wherein the two or more conductors are electrically connected to one another along a second side of the stack opposite the first side; and
a semiconductor die attached to the laminated substrate, wherein the semiconductor die includes a first variable capacitor,
wherein the first variable capacitor and the first vector inductor are electrically connected to operate as a first tunable resonator,
wherein at least one of the first side or second side is tapered to compensate for differences in mutual coupling between the two or more conductors of the stack.

5. The tunable filter of claim 1 , wherein the first variable capacitor comprises a first variable capacitor array and a bias voltage generation circuit configured to bias the first variable capacitor array to control a capacitance of the first variable capacitor array, wherein the first variable capacitor array comprises a first plurality of metal oxide semiconductor (MOS) variable capacitor cells.

6. The tunable filter of claim 5 , wherein the first plurality of MOS variable capacitor cells comprises a first MOS variable capacitor cell comprising a first MOS capacitor and a second MOS capacitor, wherein the first MOS capacitor and the second MOS capacitor are electrically connected in anti-series.

7. The tunable filter of claim 5 , wherein the first plurality of MOS variable capacitor cells comprises a first MOS variable capacitor cell comprising a first MOS capacitor and a second MOS capacitor, wherein the first MOS capacitor and the second MOS capacitor are electrically connected in anti-parallel.

8. The tunable filter of claim 1 , wherein the first vector inductor comprises a first terminal on a first side of the laminated substrate and a second terminal on a second side of the laminated substrate opposite the first side of the laminated substrate, wherein the first terminal is electrically connected to the first side of the stack, wherein the second terminal is electrically connected to the second side of the stack.

9. The tunable filter of claim 1 , wherein the first vector inductor and the first variable capacitor are electrically connected in series with one another.

10. The tunable filter of claim 9 , wherein each of the conductors in the stack have a substantially rectangular shape when viewed from above the stack.

11. The tunable filter of claim 1 , wherein the first vector inductor and the first variable capacitor are electrically connected in parallel with one another.

12. The tunable filter of claim 1 , wherein the dielectric separating each of the different conductive layers has a thickness less than a thickness of each of the three or more conductors.

13. The tunable filter of claim 1 ,
wherein the semiconductor die further comprises a second variable capacitor,
wherein the laminated substrate further comprises a second vector inductor, wherein the second variable capacitor and the second vector inductor are electrically connected to operate as a second tunable resonator.

14. The tunable filter of claim 13 ,
wherein the laminated substrate further comprises a first ground isolation structure positioned between the first vector inductor and the second vector inductor.

15. The tunable filter of claim 13 ,
wherein the semiconductor die further comprises a third variable capacitor and a fourth variable capacitor,
wherein the laminated substrate further comprises a third vector inductor and a fourth vector inductor, wherein the third variable capacitor and the third vector inductor are electrically connected to operate as a third tunable resonator, wherein the fourth variable capacitor and the fourth vector inductor are electrically connected to operate as a fourth tunable resonator.

16. The tunable filter of claim 15 ,
wherein the first vector inductor and the first variable capacitor are electrically connected in series between a radio frequency input and an intermediate node,
wherein the second vector inductor and the second variable capacitor are electrically connected in series between a radio frequency output and the intermediate node,
wherein the third vector inductor and the third variable capacitor are electrically connected in series between a ground node and the intermediate node, and
wherein the fourth vector inductor and the fourth variable capacitor are electrically connected in series between the ground node and the intermediate node.

17. The tunable filter of claim 15 ,
wherein the first vector inductor and the first variable capacitor are electrically connected in parallel between a radio frequency input and an intermediate node,
wherein the second vector inductor and the second variable capacitor are electrically connected in parallel between a radio frequency output and the intermediate node,
wherein the third vector inductor and the third variable capacitor are electrically connected in parallel between a ground node and the intermediate node, and
wherein the fourth vector inductor and the fourth variable capacitor are electrically connected in parallel between the ground node and the intermediate node.

18. The tunable filter of claim 15 ,
wherein the laminated substrate further comprises a first ground isolation structure positioned between the first vector inductor and the fourth vector inductor,
wherein the laminated substrate further comprises a second ground isolation structure between the second vector inductor and the fourth vector inductor,
wherein the laminated substrate further comprises a third ground isolation structure between the second vector inductor and the third vector inductor, and
wherein the laminated substrate further comprises a fourth ground isolation structure between the third

Assignees

• Tdk Corp

Inventors

• Madan Anuj
• Nohra George E
• Asif Mohsin
• Levesque Chris

Classifications

• H03H7/1766

  Parallel LC in series path (H03H7/1783 takes precedence) · CPC title

• H03H7/175

  Series LC in series path (H03H7/1783 takes precedence) · CPC title

• H03H7/1775

  Parallel LC in shunt or branch path (H03H7/1791 takes precedence) · CPC title

• H03H7/09

  Filters comprising mutual inductance · CPC title

• H03H7/38

  Impedance-matching networks · CPC title