Semiconductor device and method of forming ultra thin multi-die face-to-face WLCSP

US9735113B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9735113-B2
Application numberUS-78600810-A
CountryUS
Kind codeB2
Filing dateMay 24, 2010
Priority dateMay 24, 2010
Publication dateAug 15, 2017
Grant dateAug 15, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A semiconductor device has a first semiconductor die stacked over a second semiconductor die which is mounted to a temporary carrier. A plurality of bumps is formed over an active surface of the first semiconductor die around a perimeter of the second semiconductor die. An encapsulant is deposited over the first and second semiconductor die and carrier. A plurality of conductive vias is formed through the encapsulant around the first and second semiconductor die. A portion of the encapsulant and a portion of a back surface of the first and second semiconductor die is removed. An interconnect structure is formed over the encapsulant and the back surface of the first or second semiconductor die. The interconnect structure is electrically connected to the conductive vias. The carrier is removed. A heat sink or shielding layer can be formed over the encapsulant and first semiconductor die.

First claim

Opening claim text (preview).

What is claimed: 1. A method of making a semiconductor device, comprising: providing a temporary carrier; providing a plurality of first semiconductor die each including an active surface and back surface opposite the active surface; mounting the back surfaces of the plurality of first semiconductor die to the temporary carrier; mounting a plurality of second semiconductor die over the plurality of first semiconductor die with an active surface of each of the plurality of second semiconductor die oriented toward the respective active surfaces of the plurality of first semiconductor die; forming a plurality of bumps over the active surfaces of the plurality of first semiconductor die around a respective perimeter of each of the plurality of second semiconductor die; depositing an encapsulant over the plurality of first semiconductor die, the plurality of second semiconductor die, and the temporary carrier; forming a plurality of conductive vias partially through the encapsulant around the plurality of first semiconductor die and the plurality of second semiconductor die; removing a first portion of the encapsulant and the plurality of first semiconductor die to expose the conductive vias; forming a first interconnect structure over the encapsulant and the back surfaces of the plurality of first semiconductor die, the interconnect structure being electrically connected to the conductive vias; and removing the temporary carrier. 2. The method of claim 1 , further including removing a second portion of the encapsulant and a portion of a back surface of each of the plurality of second semiconductor die opposite the active surfaces. 3. The method of claim 1 , further including forming a conductive layer over the encapsulant and the back surfaces of the plurality of first semiconductor die, the conductive layer being electrically connected to the conductive vias. 4. The method of claim 1 , further including mounting a heat sink over the encapsulant and the back surfaces of the plurality of first semiconductor die or a back surface of the plurality of second semiconductor die. 5. The method of claim 1 , further including forming a shielding layer over the encapsulant and the back surfaces of the plurality of first semiconductor die or a back surface of the plurality of second semiconductor die. 6. The method of claim 1 , further including: providing an electrical component; and mounting the electrical component to the semiconductor device, the electrical component being electrically connected to the conductive vias.

Assignees

Inventors

Classifications

  • initial plating of through-holes in substrates without metal · CPC title

  • associated with components encapsulated in the insulating substrate of the PCBs; associated with components incorporated in internal layers of multilayer circuit boards · CPC title

  • Depaneling, i.e. dividing a panel into circuit boards; Working of the edges of circuit boards · CPC title

  • Manufacture or processing of a substrate for a printed circuit board supported by a temporary or sacrificial carrier (H05K1/187, H05K3/20 and H05K3/4682 take precedence) · CPC title

  • the arrangements being on an external surface of the package, e.g. on the outer surface of an encapsulation · CPC title

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Frequently asked questions

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What does patent US9735113B2 cover?
A semiconductor device has a first semiconductor die stacked over a second semiconductor die which is mounted to a temporary carrier. A plurality of bumps is formed over an active surface of the first semiconductor die around a perimeter of the second semiconductor die. An encapsulant is deposited over the first and second semiconductor die and carrier. A plurality of conductive vias is formed …
Who is the assignee on this patent?
Chi Heejo, Cho Namju, Myung Junwoo, and 1 more
What technology area does this patent fall under?
Primary CPC classification H10W70/614. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Aug 15 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).