Process for manufacturing a semiconductor structure with temporary bonding via metal layers

Patent metadata

Field	Value
Publication number	US-9735038-B2
Application number	US-201414910553-A
Country	US
Kind code	B2
Filing date	Aug 4, 2014
Priority date	Aug 5, 2013
Publication date	Aug 15, 2017
Grant date	Aug 15, 2017

Abstract

A method for manufacturing a structure implementing temporary bonding a substrate to be handled with a handle substrate, including: providing the substrate to be handled covered with a first metal layer, the first layer having a first grain size; providing the handle substrate covered with a second metal layer, the second layer having same composition as the first metal layer and a second grain size different from the first grain size; assembling the substrate to be handled and the handle substrate by thermocompression assisted direct bonding on the first and second metal layers; possibly treating the substrate to be handled assembled to the handle substrate; disassembling the assembly of the substrate to be handled and the handle substrate to form the structure, including an embrittlement thermal annealing of the assembly resulting in the handle substrate being detached.

First claim

The invention claimed is:

1. A method for manufacturing a structure which implements temporary bonding of a substrate to be handled with a handle substrate, comprising:
providing the substrate to be handled covered with a first metal layer, the first metal layer having a first grain size;
providing the handle substrate covered with a second metal layer, the second metal layer having same composition as the first metal layer and a second grain size different from the first grain size;
assembling the substrate to be handled and the handle substrate by thermocompression assisted direct bonding of the first and second metal layers, said assembling resulting in an assembly which comprises the substrate to be handled assembled to the handle substrate through a bonding layer made of the first and second metal layers bonded together; and
separating the assembly at an embrittlement zone to form the structure, the separating comprising an embrittlement thermal annealing of the assembly to form the embrittlement zone in one of the first and second metal layers which has the smallest grain size.

2. The method according to claim 1 , wherein the first and second grain sizes differ by a factor at least equal to 5.

3. The method according to claim 2 , wherein one of the first and second grain sizes is between 20 nm and 100 nm and the other of the first and second grain sizes is between 5 μm and 10 μm.

4. The method according to claim 1 , wherein the first metal layer has a thickness different from the second metal layer, the thicknesses of the first and second metal layers differing according to a ratio at least equal to 5.

5. The method according to claim 1 , comprising depositing the first and second metal layers on the substrate to be handled and the handle substrate respectively according to different operating conditions.

6. The method according to claim 1 , further comprising, before assembling the substrate to be handled and the handle substrate, implementing different crystallization annealings of the substrate to be handled covered with the first metal layer and of the handle substrate covered with the second metal layer.

7. The method according to claim 1 , further comprising, before assembling the substrate to be handled and the handle substrate, a surface roughening treatment applied to at least one of the first and second metal layers.

8. The method according to claim 1 , wherein the first metal layer is a discontinuous layer including a plurality of metal micro-bumps distributed on the substrate to be handled, the first grain size being higher than the second grain size.

9. The method according to claim 1 , further comprising, after separating the assembly, withdrawing residues of the first and second metal layers present on the substrate to be handled.

10. The method according to claim 1 , wherein a first metal diffusion barrier layer is interposed between the substrate to be handled and the first metal layer, and a second metal diffusion barrier layer is interposed between the handle substrate and the second metal layer.

11. The method according to claim 1 , wherein the first and second metal layers are copper layers, and further comprising, after assembling the substrate to be handled and the handle substrate and before separating, treating the substrate to be handled while assembled to the handle substrate at a temperature higher than 200° C. and lower than the temperature of the embrittlement thermal annealing.

12. The method according to claim 1 , wherein the assembly of the substrate to be handled and the handle substrate by thermocompression assisted direct bonding is made at a temperature lower than the temperature of the embrittlement thermal annealing temperature.

13. The method according to claim 1 , wherein the first and second metal layers are copper layers, and wherein the embrittlement thermal annealing is made at a temperature higher than or equal to 400° C.

14. The method according to claim 1 , wherein the first and second metal layers are refractory metal layers, and wherein the embrittlement thermal annealing of the assembly is made at a temperature higher than or equal to 900° C.

15. The method according to claim 1 , further comprising, after assembling the substrate to be handled and the handle substrate and before separating, assembling the substrate to be handled to a receiver substrate.

16. The method according to claim 15 , wherein the first metal layer is a discontinuous layer of a plurality of metal micro-bumps distributed on the substrate to be handled, the first grain size being higher than the second grain size, and further comprising, before assembling the substrate to be handled to the receiver substrate, thinning a free face of the substrate to be handled and forming through-silicon vias passing through the thinned substrate to be handled.

17. The method according to claim 1 , further comprising, after separating the assembly, recycling the handle substrate.

18. The method according to claim 1 , comprising:
forming a first layer on the handle substrate;
forming the second metal layer on the first layer; and
forming voids at an interface between the first layer and the second metal layer.

Assignees

• Commissariat Energie Atomique
• Commissariat L Energie Atomique Et Aux Energies Alternatives

Inventors

• Gondcharton Paul
• Benaissa Lamine
• Charvet Anne-Marie
• Imbert Bruno

Classifications

• H10W90/00

  Package configurations · CPC title

• H10W72/072

  of bump connectors · CPC title

• H10W72/241

  Dispositions, e.g. layouts · CPC title

• H10W72/07207

  Temporary substrates, e.g. removable substrates · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title