Methods and apparatuses for estimating on-wafer oxide layer reduction effectiveness via color sensing

Patent metadata

Field	Value
Publication number	US-9735035-B1
Application number	US-201615011363-A
Country	US
Kind code	B1
Filing date	Jan 29, 2016
Priority date	Jan 29, 2016
Publication date	Aug 15, 2017
Grant date	Aug 15, 2017

Abstract

Disclosed are methods of preparing a semiconductor substrate having a metal seed layer for a subsequent electroplating operation. In some embodiments, the methods may include contacting the surface of the semiconductor substrate with a plasma to treat the surface by reducing metal oxides thereon and thereafter measuring a post-plasma-contact color signal from said surface, the color signal having one or more color components. The methods may then further include estimating the extent of the oxide reduction due to the plasma treatment based on the post-plasma contact color signal. In some embodiments, estimating the extent of the oxide reduction due to the plasma treatment is done based on the b* component of the post-plasma contact color signal. Also disclosed are plasma treatment apparatuses which may implement the foregoing methods.

First claim

We claim:

1. A method of preparing a semiconductor substrate having a metal seed layer for a subsequent electroplating operation, the method comprising:
contacting the surface of the semiconductor substrate with a plasma to treat the surface by reducing metal oxides thereon;
after contacting with the plasma, measuring a post-plasma-contact color signal from said surface, the color signal having one or more color components; and
estimating the extent of the oxide reduction due to the plasma treatment based, at least in part, on comparing the post-plasma contact color signal to one of: one or more reference color signals and a pre-plasma-contact color signal from said surface.

2. The method of claim 1 , wherein estimating the extent of the oxide reduction due to the plasma treatment is done based on the b* component of the post-plasma contact color signal.

3. The method of claim 1 , wherein estimating the extent of the oxide reduction due to the plasma treatment comprises:
comparing the post-plasma-contact color signal to one or more reference color signals.

4. The method of claim 3 , wherein the comparing is done based on the b* component of the color signals.

5. The method of claim 1 , wherein estimating the extent of the oxide reduction due to the plasma treatment comprises:
calculating one or more metrics, each of which is indicative of the difference between the post-plasma-contact color signal and a reference color signal from a set of one or more reference color signals.

6. The method of claim 5 , wherein each metric is monotonically related to the absolute value of the difference between the b* component of the post-plasma-contact color signal and the b* component of a reference color signal.

7. The method of claim 1 , further comprising:
before contacting with the plasma, measuring a pre-plasma-contact color signal from said surface, the color signal having one or more color components; and

wherein estimating the extent of the oxide reduction due to the plasma treatment comprises:
comparing the pre- and post-plasma-contact color signals.

8. The method of claim 7 , wherein the comparing is done based on the b* component of the color signals.

9. The method of claim 7 , wherein estimating the extent of the oxide reduction due to the plasma treatment comprises:
calculating a metric which is indicative of the difference between the pre- and post-plasma-contact color signals.

10. The method of claim 9 , wherein the metric is monotonically related to the absolute value of the difference between the b* component of the pre- and post-plasma-contact color signals.

11. The method of claim 1 , wherein the plasma contains hydrogen radicals.

12. The method of claim 1 , wherein the metal is copper.

13. The method of claim 1 , wherein the metal is cobalt.

14. The method of claim 1 , wherein measuring the post-plasma-contact color signal is performed with a color sensor located about 0.1-5″ from the substrate surface during the measuring.

15. The method of claim 14 , wherein measuring the post-plasma-contact color signal is performed with a color sensor located about 0.4-1″ from the substrate surface during the measuring.

Assignees

• Lam Res Corp

Inventors

• Ranjan Manish
• Sweeney Cian
• Ghongadi Shantinath

Classifications

• H10P74/238

  comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title

• H10P74/203 Primary

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P72/0466

  characterised by the construction of the load-lock chamber · CPC title

• H10P72/0404

  for general liquid treatment, e.g. etching followed by cleaning · CPC title

• H10W20/0523

  by irradiating with ultraviolet or particle radiation · CPC title