Overvoltage protection for a fine grained negative wordline scheme

Patent metadata

Field	Value
Publication number	US-9734892-B2
Application number	US-201514962283-A
Country	US
Kind code	B2
Filing date	Dec 8, 2015
Priority date	Aug 4, 2014
Publication date	Aug 15, 2017
Grant date	Aug 15, 2017

Abstract

A fine grained negative wordline scheme for SRAM memories is disclosed. The scheme includes a circuit having a static random access memory (SRAM) cell including at least a wordline coupled to a plurality of NFETs of a transistor array. The circuit further includes a wordline driver including a plurality of inverters coupled between a wordline group decode node, a power supply and the wordline. Overvoltage on the wordline driver and NFETs of the SRAM cell are eliminated by applying a power gating mode and lowering the power supply voltage.

First claim

What is claimed is:

1. A circuit comprising:
a power gating voltage circuit coupled to a power supply line;
a retention device coupled to the power supply line;
a wordline driver comprising a plurality of inverters coupled to a wordline group decode node, the power supply line and a wordline of a static random access memory (SRAM) cell; and
a wordline pull down network coupled to the power supply line and the wordline driver, and coupled to the wordline group decode node which controls operation of the wordline pull down network,
wherein the wordline pull down network comprises a first NFET, a second NFET and an inverter coupled between the wordline group decode node and the first NFET of the wordline pull down network.

2. The circuit of claim 1 , wherein the wordline driver comprises:
a plurality of PFET device and an NFET device;
the PFET devices are coupled to the power supply;
the NFET device of a first inverter of the plurality of inverters is coupled to a node of the wordline pull down network and its source coupled to the wordline;
a second inverter of the plurality of inverters is coupled to a wordline group decode node; and
the wordline pull down network comprises a first NFET and a second NFET.

3. The circuit of claim 1 , wherein the wordline driver eliminates overvoltage on NFETs of the SRAM cell in a power gating mode by apply a negative voltage.

4. The circuit of claim 1 , wherein:
the plurality of inverters each include a PFET device and an NFET device;
the PFET devices are coupled to the power supply;
the NFET device of a first inverter of the plurality of inverters is coupled to a node of the wordline pull down network and its source coupled to the wordline;
a second inverter of the plurality of inverters is coupled to a wordline group decode node; and
the wordline pull down network comprises a first NFET and a second NFET.

5. The circuit of claim of claim 4 , wherein, in a power gating mode:
the first NFET of the wordline pull down network is coupled to a negative voltage source and the second NFET is pulled to GND; and
the negative voltage of the first NFET of the wordline pull down network is passed to the wordline through the NFET device of the first inverter when a voltage at the wordline group decode node is 0 V and the second NFET of the wordline pull down network is pulled to GND.

6. The circuit of claim 4 , wherein, in a powered up state with selected wordline:
the first NFET device of the wordline pull down network is in an OFF state and the second NFET device of the wordline pull down network is pulled to GND;
the PFET devices of the plurality of inverters are in an ON state;
the first NFET device of the first inverter is in an OFF state; and
a supply voltage VCS is fed through the plurality of inverters to the wordline.

7. The circuit of claim 1 , wherein the power gating voltage circuit is coupled to the wordline group decode node and the power supply.

8. The circuit of claim 1 , wherein:
the plurality of inverters each include a PFET device and an NFET device,
the PFET devices are coupled to the power supply;
the NFET device of a first inverter of the plurality of inverters is coupled to the wordline pull down network and its source is coupled to the wordline; and
a second inverter of the plurality of inverters is coupled to the wordline group decode node.

9. The circuit of claim of claim 1 , wherein, in a retention state, the wordline driver eliminates overvoltage on the NFETs of the SRAM cell.

10. The circuit of claim 1 , wherein, in the retention state:
the wordline pull down network comprises a first NFET and a second NFET, wherein the first NFET controls whether to pass a negative voltage to first node and second NFET controls whether to pass 0V (GND) onto the first node SWL;
only one NFET will be on depending on when a retention state is on or off such that when the retention state is on the first NFET is on allowing negative voltage to pass, and the second NFET is off and when the retention state off the first NFET is off and the second NFET is on allowing 0V (GND) to pass.

11. The circuit of claim 1 , wherein the second NFET of the wordline pull down network is coupled directly to the wordline group decode node.

12. The circuit of claim 11 , wherein the inverter of the wordline pull down network comprises a NFET device and a PFET device each having respective source-drain paths connected to a gate of the second NFET of the wordline pull down network.

13. A circuit comprising:
a power gating voltage circuit coupled to a power supply line;
a retention device coupled to the power supply line;
a wordline driver comprising a plurality of inverters coupled to a wordline group decode node, the power supply line and a wordline of a static random access memory (SRAM) cell; and
a wordline pull down network coupled to the power supply line and the wordline driver, and coupled to the wordline group decode node which controls operation of the wordline pull down network,
wherein:
the plurality of inverters each include a PFET device and an NFET device;
the PFET devices are coupled to the power supply;
the NFET device of a first inverter of the plurality of inverters is coupled to a node of the wordline pull down network and its source coupled to the wordline;
a second inverter of the plurality of inverters is coupled to a wordline group decode node; and
the wordline pull down network comprises a first NFET and a second NFET, and wherein, in a powered up state with unselected wordline:
the first NFET device of the wordline pull down network is in an OFF state and the second NFET device of the wordline pull down network is in an ON state feeding to GND;
the PFET devices of the plurality of inverters are in an OFF state;
the first NFET device of the first inverter is in an ON state; and
0 V is fed from the second NFET device of the wordline pull down network through the first NFET device of the first inverter to the wordline.

Assignees

• IBM

Inventors

• Pilo Harold
• Wu Richard S

Classifications

• G11C11/417 Primary

  for memory cells of the field-effect type · CPC title

• G11C5/147 Primary

  Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops (G11C5/141 takes precedence) · CPC title

• G11C8/08

  Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines · CPC title

• G11C11/418

  Address circuits · CPC title

• G11C5/14

  Power supply arrangements {, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels} · CPC title