Manufacturing method for a phase modulation system with ultraviolet discharge of accumulated charges

Patent metadata

Field	Value
Publication number	US-9729246-B2
Application number	US-201314388628-A
Country	US
Kind code	B2
Filing date	Mar 22, 2013
Priority date	Mar 30, 2012
Publication date	Aug 8, 2017
Grant date	Aug 8, 2017

Abstract

An optical functional device equivalent to a 2×2 Mach-Zehnder optical switch is produced by forming two 3 dB couplers and input/output waveguides on a substrate. Two optical phase modulation paths are formed on corresponding waveguides between 3 dB couplers. A channel region having an opposite electric polarity is formed between source and drain regions, having the predetermined electric polarity, formed on the substrate. The optical phase modulation path is insulated from the surrounding area and disposed above the channel region. Additionally, a control electrode (i.e. a gate region) subjected to high-density doping is formed above the optical phase modulation path. By applying an electric voltage having the predetermined polarity to the control electrode, the source region, and the drain region, it is possible to generate hot carriers, in proximity to the optical phase modulation path, so as to accumulate charges and change a refractive index, thus setting a desired light-wave input/output path.

First claim

The invention claimed is:

1. A drive method for switching and setting a phase of a light-wave being guided by an optical phase modulation device,
the optical phase modulation device comprising:
an optical phase modulation path having a first refractive index that is capable of being changed depending on charges accumulated therein, the optical phase modulation path having a flat cross-sectional shape perpendicular to a light-wave waveguide direction, and configured to change a phase of a light-wave;
an insulating part having a second refractive index that is lower than the first refractive index, the insulating part configured to insulate the optical phase modulation path from a voltage applying means; and
a voltage applying means comprising a gate region positioned opposite to one face of the optical phase modulation path, a source region positioned proximate to one end of another face of the optical phase modulation path, and a drain region positioned proximate to another end of another face of the optical phase modulation path, wherein the gate region transmits a part of ultraviolet excitation light, irradiated from the outside, to the optical phase modulation path,
the method comprising applying an electric voltage between the gate region, the source region, and the drain region of said modulation device, thus accumulating charges in the optical phase modulation path, while the excitation light from the outside is transmitted through the gate region and irradiated to the optical phase modulation path.

2. The drive method according to claim 1 , wherein the gate region is made of a transparent electrode transmitting excitation light irradiated from the outside.

3. The drive method according to claim 1 , wherein an optical path transmitting a light-wave is formed in the insulating part in parallel to the optical phase modulation path, and wherein the optical passage is optically connected to the optical phase modulation path.

4. The drive method according to claim 1 , wherein the optical phase modulation path is made of poly-silicon.

5. The drive method according to claim 1 , wherein the optical phase modulation path is formed using a plurality of silicon oxide films and a plurality of silicon nitride films, both of which are deposited in multiple layers.

6. The drive method according to claim 1 , wherein the voltage applying means causes hot carriers so as to accumulate charges in the optical phase modulation path.

7. A drive method for switching and setting a phase of a light-wave being guided by an optical phase modulation device,
the optical phase modulation device comprising:
an optical phase modulation path having a first refractive index that is capable of being changed depending on charges accumulated therein, the optical phase modulation path having a flat cross-sectional shape perpendicular to a light-wave waveguide direction, and configured to change a phase of a light-wave;
an insulating part having a second refractive index that is lower than the first refractive index, the insulating part configured to insulate the optical phase modulation path from a voltage applying means; and
a voltage applying means comprising a gate region positioned opposite to one face of the optical phase modulation path, a source region positioned proximate to one end of another face of the optical phase modulation path, and a drain region positioned proximate to another end of another face of the optical phase modulation path, wherein the gate region transmits a part of ultraviolet excitation light, irradiated from the outside, to the optical phase modulation path,
the method comprising:
transmitting excitation light from the outside through the gate region; and
irradiating said transmitted light to the optical phase modulation path, thus discharging accumulated charges.

8. The drive method according to claim 1 , further comprising:
applying an electric voltage between the gate region and the source region while excitation light from the outside is transmitted through the gate region; and
irradiating said transmitted light to the optical phase modulation path, thus discharging accumulated charges.

9. The drive method according to claim 1 , wherein an optical path transmitting a light-wave is formed in the insulating part in parallel to the optical phase modulation path, and wherein the optical passage is optically connected to the optical phase modulation path.

10. The drive method according to claim 7 , wherein the voltage applying means causes hot carriers so as to accumulate charges in the optical phase modulation path.

11. The drive method according to claim 7 , wherein the gate region is made of a transparent electrode transmitting excitation light irradiated from the outside.

12. The drive method according to claim 7 , wherein an optical path transmitting a light-wave is formed in the insulating part in parallel to the optical phase modulation path, and wherein the optical passage is optically connected to the optical phase modulation path.

13. The drive method according to claim 7 , wherein the optical phase modulation path is made of poly-silicon.

14. The drive method according to claim 7 , wherein the optical phase modulation path is formed using a plurality of silicon oxide films and a plurality of silicon nitride films, both of which are deposited in multiple layers.

15. The drive method according to claim 7 , further comprising:
applying an electric voltage between the gate region and the source region while excitation light from the outside is transmitted through the gate region; and
irradiating said transmitted light to the optical phase modulation path, thus discharging accumulated charges.

16. The drive method according to claim 7 , wherein an optical path transmitting a light-wave is formed in the insulating part in parallel to the optical phase modulation path, and wherein the optical passage is optically connected to the optical phase modulation path.

Assignees

• Nec Corp

Inventors

• Ishizaka Masashige

Classifications

• G02F2203/055

  wavelength filtering · CPC title

• G02F1/0121

  Operation of devices; Circuit arrangements, not otherwise provided for in this subclass · CPC title

• G02F2203/15

  involving resonance effects, e.g. resonantly enhanced interaction · CPC title

• H04B10/548

  Phase or frequency modulation · CPC title

• G02F1/2257 Primary

  the optical waveguides being made of semiconducting material · CPC title