Display device substrate and method for fabricating same, and display device

Patent metadata

Field	Value
Publication number	US-9239484-B2
Application number	US-201113884356-A
Country	US
Kind code	B2
Filing date	Nov 2, 2011
Priority date	Nov 10, 2010
Publication date	Jan 19, 2016
Grant date	Jan 19, 2016

Abstract

A thin film transistor substrate ( 20 a ) includes an insulating substrate ( 10 a ), a semiconductor layer ( 13 a ) provided on the insulating substrate ( 10 a ) and having a channel region (C), and a channel protection layer ( 25 ) provided in the channel region (C). The channel protection layer ( 25 ) is made of a multilayer film in which first insulating films and second insulating films are alternately layered. A relationship between a refractive index Ra of the first insulating film and a refractive index Rb of the second insulating film is Rb/Ra≧1.3.

First claim

The invention claimed is:

1. A display device substrate, comprising:
an insulating substrate;
a gate electrode provided directly on the insulation substrate;
a gate insulating film provided directly on the insulating substrate and the gate electrode;
a semiconductor layer provided on the insulating substrate, directly provided on the gate insulating film, and including a channel region; and
a channel protection layer provided in the channel region and made of an insulating material, wherein
a fine projection/recess structure including recesses and projections is defined in a surface of the channel protection layer which faces away from the semiconductor layer.

2. The display device substrate of claim 1 , wherein
a distance between adjacent ones of the projections or adjacent ones of the recesses of the projection/recess structure is 380 nm or less.

3. The display device substrate of claim 1 , wherein
a height of the projection or a depth of the recess is 760 nm or more.

4. The display device substrate of claim 1 , wherein
the semiconductor layer is a semiconductor layer of a thin film transistor.

5. The display device substrate of claim 1 , wherein
the semiconductor layer defines an optical sensor.

6. A display device, comprising:
the display device substrate of claim 1 ;
a second display device substrate located to face the display device substrate; and
a display medium layer provided between the display device substrate and the second display device substrate.

7. The display device of claim 6 , wherein
the display medium layer is a liquid crystal layer.

Assignees

• Kuniyoshi Tokuaki
• Sharp Kk

Inventors

• Kuniyoshi Tokuaki

Classifications

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D30/6732

  Bottom-gate only TFTs · CPC title

• H10D30/6723

  having light shields · CPC title

• H10D30/0316

  of lateral bottom-gate TFTs comprising only a single gate · CPC title

• G02F2201/34

  reflector · CPC title