Sensor device and method

Patent metadata

Field	Value
Publication number	US-9728652-B2
Application number	US-201213358316-A
Country	US
Kind code	B2
Filing date	Jan 25, 2012
Priority date	Jan 25, 2012
Publication date	Aug 8, 2017
Grant date	Aug 8, 2017

Abstract

A sensor device includes a semiconductor chip. The semiconductor chip has a sensing region sensitive to mechanical loading. A pillar is mechanically coupled to the sensing region.

First claim

What is claimed is:

1. A sensor device comprising:
a semiconductor chip having at least one sensing region sensitive to a mechanical loading, the at least one sensing region being located in a bulk part of the semiconductor chip adjacent to an upper surface of the semiconductor chip, wherein a transistor having a channel region is embedded in the at least one sensing region; and
at least one pillar fixedly secured to the bulk part of the semiconductor chip at the at least one sensing region, the at least one pillar being arranged on the upper surface of the semiconductor chip directly above the at least one sensing region, wherein the at least one pillar has an aspect ratio between 5 and 40, and wherein the at least one pillar is configured to mechanically introduce an external stress generated by a forced lateral deflection of the at least one pillar into the channel region of the transistor which induces a deformation in a semiconductor lattice in the channel region which varies an electrical characteristic of the channel region.

2. The sensor device of claim 1 , further comprising:
a first transistor embedded in the at least one sensing region; and
a second transistor embedded in the at least one sensing region, the first and the second transistors having different orientations.

3. The sensor device of claim 1 , wherein the semiconductor chip comprises an array of sensing cells located in the at least one sensing region.

4. The sensor device of claim 3 , wherein each sensing cell of the array of sensing cells comprises an integrated circuit.

5. The sensor device of claim 1 , wherein the transistor is a CMOS transistor having channel dimensions configured to vary with the mechanical loading.

6. The sensor device of claim 1 , wherein the at least one pillar comprises a dielectric material.

7. The sensor device of claim 6 , wherein the at least one pillar comprises a photoresist.

8. The sensor device of claim 1 , wherein the at least one pillar comprises a metal material.

9. The sensor device of claim 1 , further comprising a body embedding the at least one pillar.

10. The sensor device of claim 1 , further comprising a structure element mechanically coupled to an end of the at least one pillar, the end being remote from the at least one sensing region.

11. The sensor device of claim 10 , wherein the structure element comprises a first surface facing the semiconductor chip, and wherein at least one engaging element is configured to be mechanically coupled to the end of the at least one pillar.

12. The sensor device of claim 10 , wherein the structure element is configured to be movable relative to the semiconductor chip.

13. The sensor device of claim 10 , wherein the structure element is configured to be fastened to a position relative to the semiconductor chip.

14. The sensor device of claim 1 , wherein the sensor device comprises a force sensor, an acceleration sensor, a flow rate sensor, or a particle counter.

15. The sensor device of claim 1 , wherein the at least one pillar consists of a dielectric material.

16. A method of manufacturing a sensor device, the method comprising:
providing a semiconductor chip having at least one sensing region sensitive to mechanical loading, the at least one sensing region being located in a bulk part of the semiconductor chip adjacent to an upper surface of the semiconductor chip, wherein a transistor having a channel region is embedded in the at least one sensing region;
depositing a material over at least a part of the upper surface of the semiconductor chip, the part of the upper surface comprising the at least one sensing region; and
structuring the material thereby forming at least one pillar fixedly secured to the bulk part of the semiconductor chip at the at least one sensing region, wherein the at least one pillar is arranged on the upper surface of the semiconductor chip directly above the at least one sensing region so as to mechanically introduce an external stress generated by a forced lateral deflection of the at least one pillar into the channel region of the transistor which induces a deformation in a semiconductor lattice in the channel region which varies an electrical characteristic of the channel region, and wherein the at least one pillar has an aspect ratio between 5 and 40.

17. The method of claim 16 , wherein the structuring comprises etching the material.

18. The method of claim 16 , further comprising mechanically coupling a structure element to the at least one pillar at an end thereof, the end being remote from the at least one sensing region.

Assignees

• Elian Klaus
• Kalz Franz-Peter
• Theuss Horst
• Infineon Technologies Ag

Inventors

• Elian Klaus
• Kalz Franz-Peter
• Theuss Horst

Classifications

• G01P15/124

  by semiconductor devices comprising at least one PN junction, e.g. transistors · CPC title

• B81B2203/0361

  Tips, pillars · CPC title

• B81C1/00246

  Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate · CPC title

• H01L29/84 Primary

  Electricity · mapped topic

• G01L1/20

  by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids (of piezo-resistive materials G01L1/18); by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress · CPC title