Method of degassing

Patent metadata

Field	Value
Publication number	US-9728432-B2
Application number	US-201514950879-A
Country	US
Kind code	B2
Filing date	Nov 24, 2015
Priority date	Nov 28, 2014
Publication date	Aug 8, 2017
Grant date	Aug 8, 2017

Abstract

A method of degassing semiconductor substrates includes sequentially loading a plurality of semiconductor substrates into a degas apparatus, and degassing the semiconductor substrates in parallel, the degassing of each semiconductor substrate commencing at a different time related to the time at which the semiconductor substrate was loaded into the degas apparatus. The method further includes unloading a semiconductor substrate from the degas apparatus when the semiconductor substrate has been degassed, while semiconductor substrates which were loaded later in the sequence are still being degassed. The degassing of the semiconductor substrates is performed at pressure of less than 10 −4 Torr, and the degas apparatus is pumped continuously during the degassing of the semiconductor substrates.

First claim

What is claimed is:

1. A method of degassing semiconductor substrates comprising:
sequentially loading a plurality of semiconductor substrates into a degas apparatus;
degassing the semiconductor substrates in parallel, the degassing of each semiconductor substrate commencing at a different time related to the time at which the semiconductor substrate was loaded into the degas apparatus; and
unloading a semiconductor substrate from the degas apparatus when the semiconductor substrate has been degassed, while semiconductor substrates which were loaded later in the sequence are still being degassed;
in which the degassing of the semiconductor substrates is performed at pressure of less than 10 −4 Torr, and the degas apparatus is pumped continuously during the degassing of the semiconductor substrates.

2. A method according to claim 1 in which the degassing of the semiconductor substrates is performed at a pressure of less than 5×10 −5 Torr.

3. A method according to claim 1 in which the degassing comprises radiatively heating the semiconductor substrates.

4. A method according to claim 1 in which each semiconductor substrate is degassed for a predetermined amount of time prior to unloading.

5. A method according to claim 1 in which at least three semiconductor substrates are sequentially loaded into the degas apparatus.

6. A method according to claim 1 in which at least 20 semiconductor substrates are sequentially loaded into the degas apparatus.

7. A method according to claim 1 in which at least 50 semiconductor substrates are sequentially loaded into the degas apparatus.

8. A method of degassing semiconductor substrates comprising:
sequentially loading semiconductor substrates into a chamber of a degas apparatus, whereby semiconductor substrates accumulate in the chamber;
establishing a process recipe of conditions within the chamber that effect a degassing of any of the semiconductor substrates in the chamber including as others of the substrates are being sequentially loaded into the chamber such that semiconductor substrates are degassed in parallel with the degassing of each semiconductor substrate loaded into the chamber subsequently to another of the semiconductor substrates commencing at a point in time later than that at which said another semiconductor substrate was loaded into the processing chamber; and
after each respective one of the semiconductor substrates has been degassed in the chamber, unloading the respective semiconductor substrate from the chamber while semiconductor substrates which were loaded into the chamber subsequent to the respective semiconductor substrate remain under said conditions of the process recipe so that they continue to be degassed in the process chamber during said unloading,
wherein the establishing of a process recipe of conditions within the chamber to effect the degassing comprises regulating the pressure in the process chamber to be less than 10 −4 Torr while pumping gas from the chamber continuously during the degassing of the semiconductor substrates situated in the chamber.

9. A method according to claim 8 in which the establishing of a process recipe of conditions within the chamber to effect the degassing comprises regulating the pressure in the process chamber to be less than 5×10 −5 Torr.

10. A method according to claim 8 in which the establishing of a process recipe of conditions within the chamber to effect the degassing comprises radiantly heating the semiconductor substrates.

11. A method according to claim 8 in which each of the semiconductor substrates is unloaded from the chamber after a period of time has elapsed since the semiconductor substrate was loaded into the chamber, and said period of time is the same for each of the plurality of semiconductor substrates such that each the semiconductors substrates is degassed for the same amount of time in the chamber.

12. A method according to claim 8 in which at least 20 semiconductor substrates are sequentially loaded into the chamber before any of the 20 semiconductor substrates are unloaded from the chamber.

13. A method according to claim 8 in which at least 50 semiconductor substrates are sequentially loaded into the chamber before any of the 50 semiconductor substrates are unloaded from the chamber.

Assignees

• Spts Technologies Ltd

Inventors

• Burgess Stephen R
• Wilby Anthony Paul

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P72/3306

  Horizontal transfer of a single workpiece · CPC title

• H10P72/0462

  characterised by the construction of the processing chambers, e.g. modular processing chambers · CPC title

• H10P72/0434

  mainly by convection · CPC title

• H10P72/0402 Primary

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title