Method for preparing film patterns

Patent metadata

Field	Value
Publication number	US-9728413-B2
Application number	US-201314400931-A
Country	US
Kind code	B2
Filing date	Dec 4, 2013
Priority date	Sep 22, 2013
Publication date	Aug 8, 2017
Grant date	Aug 8, 2017

Abstract

A method for preparing film patterns; firstly, a complementary film pattern ( 1 ) to a desired film pattern ( 201 ) is prepared on a substrate ( 3 ) with an erasable agent; secondly, a whole layer of film ( 2 ) is formed on the complementary film pattern ( 1 ); and thirdly, the desired film pattern ( 201 ) is obtained by removing the complementary film pattern ( 1 ). The preparation method can simplify the production process and reduce the production cost of the film patterns.

First claim

The invention claimed is:

1. A method for preparing film patterns, comprising:
forming a first film pattern with an erasable formulation on a substrate;
preparing a second film on the substrate provided with the first film pattern; and
removing the first film pattern on the substrate and an area of the second film covering the first film pattern and obtaining a second film pattern complementary to the first film pattern,
wherein the erasable formulation comprises a composite solution of a dispersant, an erasable agent and a solution; the dispersant is polymeric polycarboxylic acid salt or fatty acyl diethanol amine; the erasable agent is a long-chain fatty acid ester; and the solution is polyvinyl alcohol (PVA) or lower alcohol.

2. The method according to claim 1 , wherein the first film pattern is formed on the substrate by a pattern drawing or printing process.

3. The method according to claim 2 , wherein the second film is prepared on the substrate provided with the first film pattern by a film coating process.

4. The method according to claim 3 , wherein the second film is a transparent conductive oxide film or a metal film.

5. The method according to claim 4 , wherein the transparent conductive oxide film is an indium tin oxide (ITO) film.

6. The method according to claim 2 , wherein the first film pattern on the substrate and the area of the second film covering the first film pattern are removed by an erasing means or a cleaning agent.

7. The method according to claim 6 , wherein the cleaning agent and the erasable agent have a same polarity.

8. The method according to claim 1 , wherein the second film is prepared on the substrate provided with the first film pattern by a film coating process.

9. The method according to claim 8 , wherein the second film is a transparent conductive oxide film or a metal film.

10. The method according to claim 9 , wherein the transparent conductive oxide film is an indium tin oxide (ITO) film.

11. The method according to claim 1 , wherein the first film pattern on the substrate and the area of the second film covering the first film pattern are removed by an erasing means or a cleaning agent.

12. The method according to claim 11 , wherein the cleaning agent and the erasable agent have a same polarity.

Assignees

• Boe Technology Group Co Ltd
• Chengdu Boe Optoelect Tech Co

Inventors

• Yang Yuqing
• Park Seung Yik
• Lee Byung Chun

Classifications

• H10P76/403

  for lift-off processes · CPC title

• H10D64/013

  of electrodes having a conductor capacitively coupled to a semiconductor by an insulator · CPC title

• H10P14/44 Primary

  Physical vapour deposition [PVD] · CPC title

• H01L31/1884

  Electricity · mapped topic

• H01L21/2855 Primary

  Electricity · mapped topic