Extreme ultraviolet lithography process
US-2016377983-A1 · Dec 29, 2016 · US
US9726977B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9726977-B2 |
| Application number | US-65861510-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 8, 2010 |
| Priority date | Feb 8, 2009 |
| Publication date | Aug 8, 2017 |
| Grant date | Aug 8, 2017 |
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Organic coating compositions, particularly antireflective coating compositions, are provided that can be developed with an aqueous alkaline developer, including in a single step during development of an overcoated photoresist layer. Preferred coating compositions comprise a tetrapolymer that comprises at least four distinct functional groups.
Opening claim text (preview).
What is claimed is: 1. An antireflective composition for use with an overcoated photoresist layer, comprising: a tetrapolymer that comprises polymizerized units of maleimide, 9-anthracene-methyl methacrylate, 2-hydroxynaphthalene-methylmethacrylate, and t-butyl acrylate. 2. The composition of claim 1 wherein the coating composition further comprises an acid or acid generator compound. 3. The composition of claim 1 wherein the coating composition further comprises a photoacid generator compound. 4. A method for forming a photoresist relief image comprising: (a) applying over a substrate a coating layer of antireflective composition of claim 1 ; and (b) applying a photoresist layer above the coating composition layer. 5. The method of claim 4 wherein the coating composition further comprises an acid or acid generator compound. 6. The method of claim 4 wherein the coating composition further comprises a photoacid generator compound. 7. The method of claim 4 wherein the antireflective coating composition layer is not crosslinked at the time the photoresist layer is applied. 8. The method of claim 4 wherein the applied photoresist layer is exposed to patterned radiation and then developed with an aqueous alkaline developer composition, whereby the developer composition selectively removes in both the photoresist layer and the underlying coating composition layer the image as defined in the photoresist layer by patterned radiation.
having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title
characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used · CPC title
Homopolymers or copolymers of aromatic monomers containing elements other than carbon and hydrogen · CPC title
Homopolymers or copolymers of unsaturated alcohols (C08L29/14 takes precedence) · CPC title
Homopolymers or copolymers of amides or imides · CPC title
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