Reflective mask blank, method of manufacturing same, reflective mask and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-9726969-B2
Application number	US-201414787532-A
Country	US
Kind code	B2
Filing date	Aug 29, 2014
Priority date	Sep 18, 2013
Publication date	Aug 8, 2017
Grant date	Aug 8, 2017

Abstract

A reflective mask blank capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus. The reflective mask blank has a mask blank multilayer film comprising a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, and an absorber film on a main surface of a mask blank substrate, wherein, in the relationship between bearing area (%) and bearing depth (nm) as measured with an atomic force microscope for a 1 μm×1 μm region of the surface of the reflective mask blank on which the mask blank multilayer film is formed, the surface of the reflective mask blank satisfies the relationship of (BA 70 −BA 30 )/(BD 70 −BD 30 )≧60(%/nm) and maximum height (Rmax)≦4.5 nm.

First claim

The invention claimed is:

1. A reflective mask blank, comprising:
a mask blank multilayer film that comprises a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, and an absorber film on or above a main surface of a mask blank substrate;
wherein, in the relationship between bearing area (%) and bearing depth (nm) as measured with an atomic force microscope for a 1 μm×1 μm region of the surface of the reflective mask blank on which the mask blank multilayer film is formed, the surface of the reflective mask blank satisfies the relationship of (BA 70 −BA 30 )/(BD 70 −BD 30 )≧60(%/nm) and maximum height (Rmax)≦4.5 nm, wherein BA 30 is defined as a bearing area of 30%, BA 70 is defined as a bearing area of 70%, and BD 30 and BD 70 respectively is defined as bearing depths corresponding to a bearing area of 30% and bearing area of 70%.

2. The reflective mask blank according to claim 1 , wherein the mask blank multilayer film further comprises a protective film arranged in contact with a surface of the multilayer reflective film on the opposite side from the mask blank substrate.

3. The reflective mask blank according to claim 1 , wherein the mask blank multilayer film further comprises an etching mask film arranged in contact with the surface of the absorber film on the opposite side from the mask blank substrate.

4. The reflective mask blank according to claim 1 , wherein the absorber film comprises tantalum and nitrogen, and the nitrogen content is 10 at % to 50 at %.

5. The reflective mask blank according to claim 1 , wherein the film thickness of the absorber film is not more than 60 nm.

6. The reflective mask blank according to claim 1 , wherein the absorber film has a phase shift function by which the phase difference between light reflected from the surface of the absorber film and light reflected from the surface of the multilayer reflective film or protective film, where the absorber film is not formed, has a prescribed phase difference.

7. A reflective mask having an absorber pattern on the multilayer reflective film, the absorber pattern being obtained by patterning the absorber film of the reflective mask blank according to claim 1 .

8. A method of manufacturing a semiconductor device, comprising: forming a transfer pattern on a transferred substrate by carrying out a lithography process with an exposure apparatus using the reflective mask according to claim 7 .

9. A method of manufacturing a reflective mask blank having a mask blank multilayer film comprising a multilayer reflective film and an absorber film on or above a main surface of a mask blank substrate, wherein a multilayer reflective film is obtained by alternately laminating a high refractive index layer and a low refractive index layer, the method comprising:
forming the multilayer reflective film on or above the main surface of the mask blank substrate, and
forming the absorber film on or above the multilayer reflective film;
wherein, the flow rate of atmospheric gas is controlled so that, in the relationship between bearing area (%) and bearing depth (nm), as measured with an atomic force microscope for a 1×μm×1 μm region of the surface of the reflective mask blank on which the mask blank multilayer film is formed, the surface of the reflective mask blank satisfies the relationship of (BA 70 −BA 30 )/(BD 70 −BD 30 )≧60(%/nm) and maximum height (Rmax)≦4.5 nm,
wherein BA 30 is defined as a bearing area of 30%, BA 70 is defined as a bearing area of 70%, and BD 30 and BD 70 respectively is defined as bearing depths corresponding to a bearing area of 30% and bearing area of 70%.

10. The method of manufacturing a reflective mask blank according to claim 9 , wherein the multilayer reflective film is formed, the multilayer reflective film is formed by ion beam sputtering by alternately irradiating a sputtering target of a high refractive index material and a sputtering target of a low refractive index material with an ion beam.

11. The method of manufacturing a reflective mask blank according to claim 9 , wherein, when the absorber film is formed, the absorber film is formed by reactive sputtering using a sputtering target of an absorber film material, and the absorber film contains a component contained in the atmospheric gas during reactive sputtering.

12. The method of manufacturing a reflective mask blank according to claim 11 , wherein the atmospheric gas is a mixed gas containing an inert gas and nitrogen gas.

13. The method of manufacturing a reflective mask blank according to claim 9 , wherein the absorber film is formed using a sputtering target of a material containing tantalum.

14. The method of manufacturing a reflective mask blank according to claim 9 , wherein, when the absorber film is formed, the absorber film is formed by sputtering using a sputtering target of a material of the absorber film, and the material and film thickness of the absorber film are selected so that the maximum height (Rmax) is not more than 4.5 nm and, in the relationship between bearing area (%) and bearing depth (nm) as measured with an atomic force microscope for a 1 μm×1 μm region, the surface of the reflective mask blank satisfies the relationship of (BA 70 −BA 30 )/(BD 70 −BD 30 )≧60(%/nm) and maximum height (Rmax)≦4.5 nm,
wherein BA 30 is defined as a bearing area of 30%, BA 70 is defined as a bearing area of 70%, and BD 30 and BD 70 respectively is defined as bearing depths corresponding to a bearing area of 30% and bearing area of 70%.

15. The method of manufacturing a reflective mask blank according to claim 14 , wherein the material of the absorber film is a material that contains nitrogen, and the film thickness of the absorber film is not more than 60 nm.

16. The method of manufacturing a reflective mask blank according to claim 9 , further comprising forming a protective film arranged in contact with the surface of the multilayer reflective film.

17. The method of manufacturing a reflective mask blank according to claim 16 , wherein the protective film is formed by ion beam sputtering by irradiating a sputtering target of a protective film material with an ion beam.

18. The method of manufacturing a reflective mask blank according to claim 9 , further comprising forming an etching mask film arranged in contact with the surface of the multilayer reflective film.

Assignees

• Hoya Corp

Inventors

• Hamamoto Kazuhiro
• ASAKAWA Tatsuo
• Shoki Tsutomu

Classifications

• G03F7/2004

  characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light · CPC title

• G03F1/84

  Inspecting · CPC title

• G03F1/24 Primary

  Reflection masks; Preparation thereof · CPC title

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• G03F1/80

  Etching · CPC title