Block copolymer, method of forming the same, and method of forming pattern

Patent metadata

Field	Value
Publication number	US-9725550-B2
Application number	US-201514962183-A
Country	US
Kind code	B2
Filing date	Dec 8, 2015
Priority date	Jan 11, 2013
Publication date	Aug 8, 2017
Grant date	Aug 8, 2017

Abstract

A block copolymer is provided. The block copolymer according to an exemplary embodiment includes a first block represented by Chemical Formula 1 and a second block represented by Chemical Formula 2:

wherein COM1 and COM2 are independently selected from a polystyrene moiety, polymethylmethacrylate moiety, polyethylene oxide moiety, polyvinylpyridine moiety, polydimethylsiloxane moiety, polyferrocenyldimethylsilane moiety, and polyisoprene moiety, R1 is hydrogen or an alkyl group with 1 to 10 carbon atoms, Ph is a phenyl group, a is 1 to 50, R2 is hydrogen or an alkyl group with 1 to 10 carbon atoms, and b is 1 to 50.

First claim

What is claimed is:

1. A block copolymer comprising:
a first block represented by COM A in Structural Formula A;
a second block represented by COM B in Structural Formula A; and
a random block inserted between the first block and the second block and represented by RBC in Structural Formula A:

wherein COM A and COM B are independently selected from polyethylene oxide moiety, polyvinylpyridine moiety, polydimethylsiloxane moiety, polyferrocenyldimethylsilane moiety, and polyisoprene moiety, and RBC is a group in which at least two unit blocks are randomly copolymerized.

2. A block copolymer comprising:
a first block represented by COM A in Structural Formula A;
a second block represented by COM B in Structural Formula A; and
a random block inserted between the first block and the second block and represented by RBC in Structural Formula A:

Structural Formula A,
wherein the block copolymer is represented by Chemical Formula B:

wherein a molecular weight of Chemical Formula B is 10,000 to 1,000,000, l and n are 10 to 10,000, m is 5 to 2000, x is 10 to 500, y is 10 to 500 and a unit block represented by

and a unit block represented by

in RBC are randomly copolymerized.

3. A method of making a block copolymer, comprising synthesizing the block copolymer of claim 1 based on Reaction Equation A:

4. A pattern formation method comprising:
coating the block copolymer of claim 1 on a substrate comprising a mother pattern layer to form a polymer thin film;
selectively removing one block of a first block and a second block from the polymer thin film; and
etching the mother pattern layer by using the polymer thin film from which one block is removed as a mask.

5. The pattern formation method of claim 4 , wherein
the polymer thin film is treated with ultraviolet rays or heat.

Assignees

• Samsung Display Co Ltd
• Univ Korea Res & Bus Found
• Univ Sogang Res Foundation

Inventors

• Kang Min Hyuck
• Lee Su Mi
• Kim Myung Im
• Kim Tae Woo
• Park Seung-Won
• Lei Xie
• Kang na na
• Moon Bong-Jin
• Bang Joona
• Woo Sang Hoon
• Lee Jin Yeong
• Jung Hyun Jung
• Huh June

Classifications

• A43B3/108

  characterised by the sole · CPC title

• A43B3/246

  characterised by the sole · CPC title

• A43B7/223

  characterised by the constructive form · CPC title

• C08F293/00 Primary

  Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule (on to polymers modified by introduction of unsaturated end groups C08F290/02) · CPC title

• A43B3/101 Primary

  Slippers, e.g. flip-flops or thong sandals · CPC title