Power module substrate, power module substrate with heatsink, power module, and method for producing power module substrate

Patent metadata

Field	Value
Publication number	US-9723707-B2
Application number	US-201314388051-A
Country	US
Kind code	B2
Filing date	Mar 29, 2013
Priority date	Mar 30, 2012
Publication date	Aug 1, 2017
Grant date	Aug 1, 2017

Abstract

A power module substrate includes a circuit layer, an aluminum layer arranged on a surface of an insulation layer, and a copper layer laminated on one side of the aluminum layer. The aluminum layer and the copper layer are bonded together by solid phase diffusion bonding.

First claim

The invention claimed is:

1. A power module substrate comprising:
a ceramic substrate,
and a circuit layer formed on a surface of the ceramic substrate,
wherein the circuit layer includes an aluminum layer arranged on the surface of the ceramic substrate and,
a copper layer laminated on one side of the aluminum layer by solid phase diffusion bonding,
wherein a diffusion layer including Cu and Al is formed in a bonding interface between the aluminum layer and the copper layer,
wherein the diffusion layer has a structure in which a plurality of intermetallic compounds is laminated along the bonding interface,
wherein each of the plurality of intermetallic compounds is formed in a form of a layer,
wherein the plurality of intermetallic compounds includes a θ phase, and an η2 phase, and
wherein a layer of each phase is arranged in order of the θ phase and the η2 phase from the aluminum layer toward the copper layer.

2. The power module substrate according to claim 1 , wherein
a bonding interface between the copper layer and the diffusion layer has a configuration in which an oxide is dispersed in the form of a layer along the bonding interface.

3. The power module substrate according to claim 1 , wherein
a thickness of the copper layer is 0.1 to 6.0 mm.

4. The power module substrate according to claim 1 , wherein
the aluminum layer is formed by bonding an aluminum plate having a purity of 99.99% by mass or more to the ceramic substrate.

5. The power module substrate according to claim 1 , wherein
a thickness of the diffusion layer is 1 to 80 μm.

6. The power module substrate according to claim 1 , wherein
the diffusion layer has a concentration gradient in which the concentration of aluminum atoms lowers gradually and the concentration of copper atoms increases gradually toward the copper layer from the aluminum layer.

7. The power module substrate according to claim 1 , wherein
the plurality of intermetallic compounds further includes a ζ2 phase, and
a layer of the ζ2 phase is formed between the η2 phase and the copper layer.

8. A power module substrate with a heatsink comprising:
the power module substrate according to claim 1 ; and
the heatsink bonded to the other side of the power module substrate.

9. The power module substrate with a heatsink according to claim 8 , wherein
the bonding layer has a concentration gradient in which a concentration of copper atoms gradually decreases and a concentration of aluminum atoms gradually increases from the aluminum layer toward the heatsink.

10. A power module comprising:
the power module substrate according to claim 1 ; and
a semiconductor device bonded to the one side of the circuit layer.

11. A method for producing a power module substrate comprising a ceramic substrate and a circuit layer formed on a surface of the ceramic substrate, the method comprises:
a circuit layer forming step in which the circuit layer is formed on a surface of the ceramic substrate;
wherein the circuit layer forming step comprises:
an aluminum layer arranging step in which an aluminum layer is arranged on the surface of the ceramic substrate; and
a copper laminating step in which a copper layer is laminated on one side of the aluminum layer after the aluminum layer arranging step,
wherein in the copper laminating step, the aluminum layer and the copper layer are bonded together by solid phase diffusion bonding, and a diffusion layer including Cu and Al is formed in a bonding interface between the aluminum layer and the copper layer,
wherein the diffusion layer has a structure in which a plurality of intermetallic compounds is laminated along the bonding interface,
wherein each of the plurality of intermetallic compounds is formed in a form of a layer,
wherein the plurality of intermetallic compounds includes a θ phase, and an η2 phase, and
wherein a layer of each phase is arranged in order of the θ phase and the η2 phase from the aluminum layer toward the copper layer.

12. The method for producing a power module substrate according to claim 11 , wherein
in the copper laminating step,
the copper layer is laminated on one side of the aluminum layer, and
the aluminum layer and the copper layer are bonded together by solid phase diffusion bonding by maintaining at 400° C. or more to less than 548° C. in a state of pressurizing the aluminum layer and the copper layer at a pressure of 3 to 35 kgf/cm 2 .

Assignees

• Mitsubishi Materials Corp

Inventors

• Terasaki Nobuyuki
• Nagatomo Yoshiyuki
• Kuromitsu Yoshirou

Classifications

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/352

  comprising metals or metalloids, e.g. solders · CPC title

• H10W72/073

  of die-attach connectors · CPC title

• H10W40/47

  by flowing liquids, e.g. forced water cooling · CPC title

• H10W40/255 Primary

  having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates · CPC title